JPS61117859A - 基板ポンプ回路 - Google Patents

基板ポンプ回路

Info

Publication number
JPS61117859A
JPS61117859A JP60203213A JP20321385A JPS61117859A JP S61117859 A JPS61117859 A JP S61117859A JP 60203213 A JP60203213 A JP 60203213A JP 20321385 A JP20321385 A JP 20321385A JP S61117859 A JPS61117859 A JP S61117859A
Authority
JP
Japan
Prior art keywords
pump
substrate
transistor
node
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60203213A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0582145B2 (enExample
Inventor
ペリイ ダブリユ,ロウ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS61117859A publication Critical patent/JPS61117859A/ja
Publication of JPH0582145B2 publication Critical patent/JPH0582145B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is DC
    • G05F3/10Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
  • Dram (AREA)
JP60203213A 1984-09-17 1985-09-13 基板ポンプ回路 Granted JPS61117859A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/651,140 US4628215A (en) 1984-09-17 1984-09-17 Drive circuit for substrate pump
US651140 1996-05-22

Publications (2)

Publication Number Publication Date
JPS61117859A true JPS61117859A (ja) 1986-06-05
JPH0582145B2 JPH0582145B2 (enExample) 1993-11-17

Family

ID=24611718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60203213A Granted JPS61117859A (ja) 1984-09-17 1985-09-13 基板ポンプ回路

Country Status (2)

Country Link
US (1) US4628215A (enExample)
JP (1) JPS61117859A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0262796A (ja) * 1988-08-29 1990-03-02 Matsushita Electric Ind Co Ltd 昇圧回路

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199363A (ja) * 1984-10-19 1986-05-17 Mitsubishi Electric Corp 基板電位発生回路
US5077488A (en) * 1986-10-23 1991-12-31 Abbott Laboratories Digital timing signal generator and voltage regulation circuit
US5036229A (en) * 1989-07-18 1991-07-30 Gazelle Microcircuits, Inc. Low ripple bias voltage generator
JPH076581A (ja) * 1992-11-10 1995-01-10 Texas Instr Inc <Ti> 基板バイアス・ポンプ装置
US5721509A (en) * 1996-02-05 1998-02-24 Motorola, Inc. Charge pump having reduced threshold voltage losses
JP4109340B2 (ja) * 1997-12-26 2008-07-02 株式会社ルネサステクノロジ 半導体集積回路装置
KR100529386B1 (ko) * 2004-04-27 2005-11-17 주식회사 하이닉스반도체 래치-업 방지용 클램프를 구비한 반도체 메모리 소자
US8476709B2 (en) * 2006-08-24 2013-07-02 Infineon Technologies Ag ESD protection device and method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042621B2 (ja) * 1977-03-31 1985-09-24 株式会社東芝 Mos集積回路装置
JPS5453240A (en) * 1977-10-03 1979-04-26 Toshiba Corp Reverse voltage generating circuit
JPS5525220A (en) * 1978-08-11 1980-02-22 Oki Electric Ind Co Ltd Substrate bias generation circuit
JPS5590139A (en) * 1978-12-27 1980-07-08 Fujitsu Ltd Substrate bias generating circuit
US4460835A (en) * 1980-05-13 1984-07-17 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator
US4307333A (en) * 1980-07-29 1981-12-22 Sperry Corporation Two way regulating circuit
US4322675A (en) * 1980-11-03 1982-03-30 Fairchild Camera & Instrument Corp. Regulated MOS substrate bias voltage generator for a static random access memory
JPS58105563A (ja) * 1981-12-17 1983-06-23 Mitsubishi Electric Corp 基板バイアス発生回路
US4494223B1 (en) * 1982-09-16 1999-09-07 Texas Instruments Inc Sequentially clocked substrate bias generator for dynamic memory
US4553047A (en) * 1983-01-06 1985-11-12 International Business Machines Corporation Regulator for substrate voltage generator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0262796A (ja) * 1988-08-29 1990-03-02 Matsushita Electric Ind Co Ltd 昇圧回路

Also Published As

Publication number Publication date
US4628215A (en) 1986-12-09
JPH0582145B2 (enExample) 1993-11-17

Similar Documents

Publication Publication Date Title
EP0485016B1 (en) Integrated charge pump circuit with back bias voltage reduction
KR100922681B1 (ko) 차지 펌프 회로
JP2718375B2 (ja) チャージポンプ回路
JP2703706B2 (ja) 電荷ポンプ回路
JP2815292B2 (ja) 半導体集積回路装置の負電荷チャージポンプ回路
US20090219077A1 (en) Voltage multiplier with improved efficiency
US6518829B2 (en) Driver timing and circuit technique for a low noise charge pump circuit
JP2004120998A (ja) 高電圧オペレーションが可能な効率的なチャージポンプ
KR930022373A (ko) 챠지펌핑효율이 개선된 챠지펌프회로
JPH01164264A (ja) 電圧増倍器集積回路と整流器素子
JP2815293B2 (ja) 高効率nチャネルチャージポンプ
KR940003153B1 (ko) 백바이어스 발생회로
KR0167692B1 (ko) 반도체 메모리장치의 차아지 펌프회로
JPS61117859A (ja) 基板ポンプ回路
US6285240B1 (en) Low threshold MOS two phase negative charge pump
JP3024399B2 (ja) 半導体集積回路
EP0678867A2 (en) Charge pump circuit
US6118329A (en) Negative charge pump using positive high voltage
US6812774B2 (en) Method and apparatus for generating a high voltage
US7333373B2 (en) Charge pump for use in a semiconductor memory
US6177829B1 (en) Device for improving the switching efficiency of an integrated circuit charge pump
KR940006072Y1 (ko) 백바이어스전압발생회로
EP1159659A1 (en) Four-phase charge pump with lower peak current
KR940003405B1 (ko) 기판전압 발생장치
JP2768851B2 (ja) 半導体装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term