JPH0582145B2 - - Google Patents
Info
- Publication number
- JPH0582145B2 JPH0582145B2 JP60203213A JP20321385A JPH0582145B2 JP H0582145 B2 JPH0582145 B2 JP H0582145B2 JP 60203213 A JP60203213 A JP 60203213A JP 20321385 A JP20321385 A JP 20321385A JP H0582145 B2 JPH0582145 B2 JP H0582145B2
- Authority
- JP
- Japan
- Prior art keywords
- pump
- substrate
- transistor
- circuit
- node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 63
- 239000003990 capacitor Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dc-Dc Converters (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/651,140 US4628215A (en) | 1984-09-17 | 1984-09-17 | Drive circuit for substrate pump |
| US651140 | 1996-05-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61117859A JPS61117859A (ja) | 1986-06-05 |
| JPH0582145B2 true JPH0582145B2 (enExample) | 1993-11-17 |
Family
ID=24611718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60203213A Granted JPS61117859A (ja) | 1984-09-17 | 1985-09-13 | 基板ポンプ回路 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4628215A (enExample) |
| JP (1) | JPS61117859A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6199363A (ja) * | 1984-10-19 | 1986-05-17 | Mitsubishi Electric Corp | 基板電位発生回路 |
| US5077488A (en) * | 1986-10-23 | 1991-12-31 | Abbott Laboratories | Digital timing signal generator and voltage regulation circuit |
| JPH0262796A (ja) * | 1988-08-29 | 1990-03-02 | Matsushita Electric Ind Co Ltd | 昇圧回路 |
| US5036229A (en) * | 1989-07-18 | 1991-07-30 | Gazelle Microcircuits, Inc. | Low ripple bias voltage generator |
| JPH076581A (ja) * | 1992-11-10 | 1995-01-10 | Texas Instr Inc <Ti> | 基板バイアス・ポンプ装置 |
| US5721509A (en) * | 1996-02-05 | 1998-02-24 | Motorola, Inc. | Charge pump having reduced threshold voltage losses |
| JP4109340B2 (ja) * | 1997-12-26 | 2008-07-02 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| KR100529386B1 (ko) * | 2004-04-27 | 2005-11-17 | 주식회사 하이닉스반도체 | 래치-업 방지용 클램프를 구비한 반도체 메모리 소자 |
| US8476709B2 (en) * | 2006-08-24 | 2013-07-02 | Infineon Technologies Ag | ESD protection device and method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6042621B2 (ja) * | 1977-03-31 | 1985-09-24 | 株式会社東芝 | Mos集積回路装置 |
| JPS5453240A (en) * | 1977-10-03 | 1979-04-26 | Toshiba Corp | Reverse voltage generating circuit |
| JPS5525220A (en) * | 1978-08-11 | 1980-02-22 | Oki Electric Ind Co Ltd | Substrate bias generation circuit |
| JPS5590139A (en) * | 1978-12-27 | 1980-07-08 | Fujitsu Ltd | Substrate bias generating circuit |
| US4460835A (en) * | 1980-05-13 | 1984-07-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator |
| US4307333A (en) * | 1980-07-29 | 1981-12-22 | Sperry Corporation | Two way regulating circuit |
| US4322675A (en) * | 1980-11-03 | 1982-03-30 | Fairchild Camera & Instrument Corp. | Regulated MOS substrate bias voltage generator for a static random access memory |
| JPS58105563A (ja) * | 1981-12-17 | 1983-06-23 | Mitsubishi Electric Corp | 基板バイアス発生回路 |
| US4494223B1 (en) * | 1982-09-16 | 1999-09-07 | Texas Instruments Inc | Sequentially clocked substrate bias generator for dynamic memory |
| US4553047A (en) * | 1983-01-06 | 1985-11-12 | International Business Machines Corporation | Regulator for substrate voltage generator |
-
1984
- 1984-09-17 US US06/651,140 patent/US4628215A/en not_active Expired - Fee Related
-
1985
- 1985-09-13 JP JP60203213A patent/JPS61117859A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4628215A (en) | 1986-12-09 |
| JPS61117859A (ja) | 1986-06-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |