JPS6077467A - 電界効果トランジスタの製造方法 - Google Patents

電界効果トランジスタの製造方法

Info

Publication number
JPS6077467A
JPS6077467A JP58184488A JP18448883A JPS6077467A JP S6077467 A JPS6077467 A JP S6077467A JP 58184488 A JP58184488 A JP 58184488A JP 18448883 A JP18448883 A JP 18448883A JP S6077467 A JPS6077467 A JP S6077467A
Authority
JP
Japan
Prior art keywords
film
region
type
electrode
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58184488A
Other languages
English (en)
Japanese (ja)
Other versions
JPH028457B2 (enrdf_load_html_response
Inventor
Toshio Nonaka
野中　敏夫
Hiroshi Nakamura
浩 中村
Nagayasu Yamagishi
山岸　長保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP58184488A priority Critical patent/JPS6077467A/ja
Priority to US06/602,578 priority patent/US4540446A/en
Publication of JPS6077467A publication Critical patent/JPS6077467A/ja
Publication of JPH028457B2 publication Critical patent/JPH028457B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0616—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made before the completion of the source and drain regions, e.g. gate-first processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58184488A 1983-09-19 1983-10-04 電界効果トランジスタの製造方法 Granted JPS6077467A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58184488A JPS6077467A (ja) 1983-10-04 1983-10-04 電界効果トランジスタの製造方法
US06/602,578 US4540446A (en) 1983-09-19 1984-04-20 Method of forming ohmic contact on GaAs by Ge film and implanting impurity ions therethrough

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58184488A JPS6077467A (ja) 1983-10-04 1983-10-04 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6077467A true JPS6077467A (ja) 1985-05-02
JPH028457B2 JPH028457B2 (enrdf_load_html_response) 1990-02-23

Family

ID=16154048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58184488A Granted JPS6077467A (ja) 1983-09-19 1983-10-04 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6077467A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01158778A (ja) * 1987-12-15 1989-06-21 Fujitsu Ltd 半導体装置の製造方法
JP2005245968A (ja) * 2004-03-08 2005-09-15 Tetsuo Tokuda 寝具用カバー

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5425171A (en) * 1977-07-27 1979-02-24 Fujitsu Ltd Manufacture of field effect semiconductor device
US4188710A (en) * 1978-08-11 1980-02-19 The United States Of America As Represented By The Secretary Of The Navy Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films
JPS5698877A (en) * 1980-01-08 1981-08-08 Mitsubishi Electric Corp Gaas field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5425171A (en) * 1977-07-27 1979-02-24 Fujitsu Ltd Manufacture of field effect semiconductor device
US4188710A (en) * 1978-08-11 1980-02-19 The United States Of America As Represented By The Secretary Of The Navy Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films
JPS5698877A (en) * 1980-01-08 1981-08-08 Mitsubishi Electric Corp Gaas field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01158778A (ja) * 1987-12-15 1989-06-21 Fujitsu Ltd 半導体装置の製造方法
JP2005245968A (ja) * 2004-03-08 2005-09-15 Tetsuo Tokuda 寝具用カバー

Also Published As

Publication number Publication date
JPH028457B2 (enrdf_load_html_response) 1990-02-23

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