JPS6066852A - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法

Info

Publication number
JPS6066852A
JPS6066852A JP58175363A JP17536383A JPS6066852A JP S6066852 A JPS6066852 A JP S6066852A JP 58175363 A JP58175363 A JP 58175363A JP 17536383 A JP17536383 A JP 17536383A JP S6066852 A JPS6066852 A JP S6066852A
Authority
JP
Japan
Prior art keywords
region
type
conductivity type
layer
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58175363A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0554266B2 (enExample
Inventor
Hiroshi Iwasaki
博 岩崎
Shintaro Ito
伊東　新太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58175363A priority Critical patent/JPS6066852A/ja
Publication of JPS6066852A publication Critical patent/JPS6066852A/ja
Priority to US06/847,150 priority patent/US4637125A/en
Priority to US06/925,266 priority patent/US4694562A/en
Publication of JPH0554266B2 publication Critical patent/JPH0554266B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58175363A 1983-09-22 1983-09-22 半導体集積回路装置およびその製造方法 Granted JPS6066852A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58175363A JPS6066852A (ja) 1983-09-22 1983-09-22 半導体集積回路装置およびその製造方法
US06/847,150 US4637125A (en) 1983-09-22 1986-04-03 Method for making a semiconductor integrated device including bipolar transistor and CMOS transistor
US06/925,266 US4694562A (en) 1983-09-22 1986-10-31 Method for manufacturing a semiconductor integrated device including bipolar and CMOS transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58175363A JPS6066852A (ja) 1983-09-22 1983-09-22 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6066852A true JPS6066852A (ja) 1985-04-17
JPH0554266B2 JPH0554266B2 (enExample) 1993-08-12

Family

ID=15994771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58175363A Granted JPS6066852A (ja) 1983-09-22 1983-09-22 半導体集積回路装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6066852A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442852A (en) * 1987-08-10 1989-02-15 Toshiba Corp Semiconductor device and manufacture thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118663A (en) * 1980-09-25 1982-07-23 Nec Corp Manufacture of semiconductor integrated circuit device
JPS59189667A (ja) * 1983-04-13 1984-10-27 Matsushita Electronics Corp 半導体装置の製造方法
JPS6035558A (ja) * 1983-08-08 1985-02-23 Hitachi Ltd 半導体集積回路装置およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118663A (en) * 1980-09-25 1982-07-23 Nec Corp Manufacture of semiconductor integrated circuit device
JPS59189667A (ja) * 1983-04-13 1984-10-27 Matsushita Electronics Corp 半導体装置の製造方法
JPS6035558A (ja) * 1983-08-08 1985-02-23 Hitachi Ltd 半導体集積回路装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442852A (en) * 1987-08-10 1989-02-15 Toshiba Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPH0554266B2 (enExample) 1993-08-12

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