JPH0554266B2 - - Google Patents

Info

Publication number
JPH0554266B2
JPH0554266B2 JP58175363A JP17536383A JPH0554266B2 JP H0554266 B2 JPH0554266 B2 JP H0554266B2 JP 58175363 A JP58175363 A JP 58175363A JP 17536383 A JP17536383 A JP 17536383A JP H0554266 B2 JPH0554266 B2 JP H0554266B2
Authority
JP
Japan
Prior art keywords
type
region
high concentration
layer
concentration buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58175363A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6066852A (ja
Inventor
Hiroshi Iwasaki
Shintaro Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58175363A priority Critical patent/JPS6066852A/ja
Publication of JPS6066852A publication Critical patent/JPS6066852A/ja
Priority to US06/847,150 priority patent/US4637125A/en
Priority to US06/925,266 priority patent/US4694562A/en
Publication of JPH0554266B2 publication Critical patent/JPH0554266B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58175363A 1983-09-22 1983-09-22 半導体集積回路装置およびその製造方法 Granted JPS6066852A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58175363A JPS6066852A (ja) 1983-09-22 1983-09-22 半導体集積回路装置およびその製造方法
US06/847,150 US4637125A (en) 1983-09-22 1986-04-03 Method for making a semiconductor integrated device including bipolar transistor and CMOS transistor
US06/925,266 US4694562A (en) 1983-09-22 1986-10-31 Method for manufacturing a semiconductor integrated device including bipolar and CMOS transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58175363A JPS6066852A (ja) 1983-09-22 1983-09-22 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6066852A JPS6066852A (ja) 1985-04-17
JPH0554266B2 true JPH0554266B2 (enExample) 1993-08-12

Family

ID=15994771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58175363A Granted JPS6066852A (ja) 1983-09-22 1983-09-22 半導体集積回路装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6066852A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442852A (en) * 1987-08-10 1989-02-15 Toshiba Corp Semiconductor device and manufacture thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046544B2 (ja) * 1980-09-25 1985-10-16 日本電気株式会社 半導体集積回路装置の製造方法
JPS59189667A (ja) * 1983-04-13 1984-10-27 Matsushita Electronics Corp 半導体装置の製造方法
JPS6035558A (ja) * 1983-08-08 1985-02-23 Hitachi Ltd 半導体集積回路装置およびその製造方法

Also Published As

Publication number Publication date
JPS6066852A (ja) 1985-04-17

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