JPS6066202A - レ−ザ用反射鏡 - Google Patents
レ−ザ用反射鏡Info
- Publication number
- JPS6066202A JPS6066202A JP17489983A JP17489983A JPS6066202A JP S6066202 A JPS6066202 A JP S6066202A JP 17489983 A JP17489983 A JP 17489983A JP 17489983 A JP17489983 A JP 17489983A JP S6066202 A JPS6066202 A JP S6066202A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- layer
- silicon
- surface layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims abstract description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000002344 surface layer Substances 0.000 claims abstract description 42
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 23
- 229910021385 hard carbon Inorganic materials 0.000 claims abstract description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 15
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 238000007740 vapor deposition Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 62
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 35
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 34
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 150000003377 silicon compounds Chemical class 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000011241 protective layer Substances 0.000 abstract description 5
- 230000005484 gravity Effects 0.000 abstract description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 29
- 239000010408 film Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 13
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052736 halogen Inorganic materials 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910002092 carbon dioxide Inorganic materials 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000001569 carbon dioxide Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 241000860832 Yoda Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/0825—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only
- G02B5/0833—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only comprising inorganic materials only
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Lasers (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optical Filters (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17489983A JPS6066202A (ja) | 1983-09-20 | 1983-09-20 | レ−ザ用反射鏡 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17489983A JPS6066202A (ja) | 1983-09-20 | 1983-09-20 | レ−ザ用反射鏡 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6066202A true JPS6066202A (ja) | 1985-04-16 |
| JPH0336402B2 JPH0336402B2 (enrdf_load_stackoverflow) | 1991-05-31 |
Family
ID=15986630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17489983A Granted JPS6066202A (ja) | 1983-09-20 | 1983-09-20 | レ−ザ用反射鏡 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6066202A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61281203A (ja) * | 1985-06-07 | 1986-12-11 | Toshiba Corp | 低散乱ミラ−及びその製造方法 |
| JPS61295373A (ja) * | 1985-06-25 | 1986-12-26 | Canon Inc | 光化学気相成長法による堆積膜の形成方法および装置 |
| JPS62240903A (ja) * | 1986-04-14 | 1987-10-21 | Toshiba Glass Co Ltd | 多層膜反射鏡 |
| JPS63113507A (ja) * | 1986-10-31 | 1988-05-18 | Hitachi Ltd | 光導波路およびその製造法 |
| JPS63208801A (ja) * | 1987-02-26 | 1988-08-30 | Matsushita Electric Ind Co Ltd | エキシマレ−ザ用ミラ− |
| JPH06140704A (ja) * | 1992-10-26 | 1994-05-20 | Mitsubishi Electric Corp | レーザ光照射装置 |
-
1983
- 1983-09-20 JP JP17489983A patent/JPS6066202A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61281203A (ja) * | 1985-06-07 | 1986-12-11 | Toshiba Corp | 低散乱ミラ−及びその製造方法 |
| JPS61295373A (ja) * | 1985-06-25 | 1986-12-26 | Canon Inc | 光化学気相成長法による堆積膜の形成方法および装置 |
| JPS62240903A (ja) * | 1986-04-14 | 1987-10-21 | Toshiba Glass Co Ltd | 多層膜反射鏡 |
| JPS63113507A (ja) * | 1986-10-31 | 1988-05-18 | Hitachi Ltd | 光導波路およびその製造法 |
| JPS63208801A (ja) * | 1987-02-26 | 1988-08-30 | Matsushita Electric Ind Co Ltd | エキシマレ−ザ用ミラ− |
| JPH06140704A (ja) * | 1992-10-26 | 1994-05-20 | Mitsubishi Electric Corp | レーザ光照射装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0336402B2 (enrdf_load_stackoverflow) | 1991-05-31 |
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