JPS6042766A - 堆積膜形成法 - Google Patents

堆積膜形成法

Info

Publication number
JPS6042766A
JPS6042766A JP58151027A JP15102783A JPS6042766A JP S6042766 A JPS6042766 A JP S6042766A JP 58151027 A JP58151027 A JP 58151027A JP 15102783 A JP15102783 A JP 15102783A JP S6042766 A JPS6042766 A JP S6042766A
Authority
JP
Japan
Prior art keywords
space
active species
deposited film
decomposition
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58151027A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6253587B2 (enrdf_load_stackoverflow
Inventor
Masaaki Hirooka
広岡　政昭
Kyosuke Ogawa
小川　恭介
Shunichi Ishihara
俊一 石原
Isamu Shimizu
勇 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP58151027A priority Critical patent/JPS6042766A/ja
Priority to DE19843429899 priority patent/DE3429899A1/de
Priority to GB08420725A priority patent/GB2148328B/en
Priority to FR848412872A priority patent/FR2555614B1/fr
Publication of JPS6042766A publication Critical patent/JPS6042766A/ja
Publication of JPS6253587B2 publication Critical patent/JPS6253587B2/ja
Priority to US07/161,386 priority patent/US4835005A/en
Priority to US08/469,676 priority patent/US5910342A/en
Priority to US08/477,269 priority patent/US5645947A/en
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP58151027A 1983-08-16 1983-08-18 堆積膜形成法 Granted JPS6042766A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP58151027A JPS6042766A (ja) 1983-08-18 1983-08-18 堆積膜形成法
DE19843429899 DE3429899A1 (de) 1983-08-16 1984-08-14 Verfahren zur bildung eines abscheidungsfilms
GB08420725A GB2148328B (en) 1983-08-16 1984-08-15 Chemical vapour deposition process
FR848412872A FR2555614B1 (fr) 1983-08-16 1984-08-16 Procede pour former un film sur un substrat par decomposition en phase vapeur
US07/161,386 US4835005A (en) 1983-08-16 1988-02-22 Process for forming deposition film
US08/469,676 US5910342A (en) 1983-08-16 1995-06-06 Process for forming deposition film
US08/477,269 US5645947A (en) 1983-08-16 1995-06-07 Silicon-containing deposited film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58151027A JPS6042766A (ja) 1983-08-18 1983-08-18 堆積膜形成法

Publications (2)

Publication Number Publication Date
JPS6042766A true JPS6042766A (ja) 1985-03-07
JPS6253587B2 JPS6253587B2 (enrdf_load_stackoverflow) 1987-11-11

Family

ID=15509697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58151027A Granted JPS6042766A (ja) 1983-08-16 1983-08-18 堆積膜形成法

Country Status (1)

Country Link
JP (1) JPS6042766A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199676A (ja) * 1984-10-19 1986-05-17 Semiconductor Energy Lab Co Ltd 窒化珪素作製方法
JPS61179868A (ja) * 1985-02-05 1986-08-12 Canon Inc 堆積膜形成法
JPS61179869A (ja) * 1985-02-04 1986-08-12 Canon Inc 堆積膜形成法
JPS61288074A (ja) * 1985-06-17 1986-12-18 Canon Inc Ｃｖｄ法による堆積膜形成方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199676A (ja) * 1984-10-19 1986-05-17 Semiconductor Energy Lab Co Ltd 窒化珪素作製方法
JPS61179869A (ja) * 1985-02-04 1986-08-12 Canon Inc 堆積膜形成法
JPS61179868A (ja) * 1985-02-05 1986-08-12 Canon Inc 堆積膜形成法
JPS61288074A (ja) * 1985-06-17 1986-12-18 Canon Inc Ｃｖｄ法による堆積膜形成方法

Also Published As

Publication number Publication date
JPS6253587B2 (enrdf_load_stackoverflow) 1987-11-11

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