JPS6039872A - 縦型電界効果トランジスタの製造方法 - Google Patents

縦型電界効果トランジスタの製造方法

Info

Publication number
JPS6039872A
JPS6039872A JP58147990A JP14799083A JPS6039872A JP S6039872 A JPS6039872 A JP S6039872A JP 58147990 A JP58147990 A JP 58147990A JP 14799083 A JP14799083 A JP 14799083A JP S6039872 A JPS6039872 A JP S6039872A
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
impurity concentration
same
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58147990A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6339110B2 (cg-RX-API-DMAC7.html
Inventor
Hiromitsu Asai
浅井　裕充
Seigo Ando
精後 安藤
Kunishige Oe
尾江　邦重
Takayuki Sugata
孝之 菅田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58147990A priority Critical patent/JPS6039872A/ja
Publication of JPS6039872A publication Critical patent/JPS6039872A/ja
Publication of JPS6339110B2 publication Critical patent/JPS6339110B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/871—Vertical FETs having Schottky gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP58147990A 1983-08-15 1983-08-15 縦型電界効果トランジスタの製造方法 Granted JPS6039872A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58147990A JPS6039872A (ja) 1983-08-15 1983-08-15 縦型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58147990A JPS6039872A (ja) 1983-08-15 1983-08-15 縦型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6039872A true JPS6039872A (ja) 1985-03-01
JPS6339110B2 JPS6339110B2 (cg-RX-API-DMAC7.html) 1988-08-03

Family

ID=15442660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58147990A Granted JPS6039872A (ja) 1983-08-15 1983-08-15 縦型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6039872A (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226866A (ja) * 1985-07-26 1987-02-04 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド 二重注入電界効果トランジスタ
US5350702A (en) * 1992-03-28 1994-09-27 Samsung Electronics Co., Ltd. Method for fabricating a dual-gate metal-semiconductor field effect transistor
JP2001135828A (ja) * 1999-03-12 2001-05-18 Sumitomo Chem Co Ltd ３−５族化合物半導体およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5613773A (en) * 1979-07-03 1981-02-10 Licentia Gmbh Fet and method of manufacturing same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5613773A (en) * 1979-07-03 1981-02-10 Licentia Gmbh Fet and method of manufacturing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226866A (ja) * 1985-07-26 1987-02-04 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド 二重注入電界効果トランジスタ
US5350702A (en) * 1992-03-28 1994-09-27 Samsung Electronics Co., Ltd. Method for fabricating a dual-gate metal-semiconductor field effect transistor
JP2001135828A (ja) * 1999-03-12 2001-05-18 Sumitomo Chem Co Ltd ３−５族化合物半導体およびその製造方法

Also Published As

Publication number Publication date
JPS6339110B2 (cg-RX-API-DMAC7.html) 1988-08-03

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