JPS6038883A - ショットキゲ−ト型ｆｅｔの製造方法 - Google Patents

ショットキゲ−ト型ｆｅｔの製造方法

Info

Publication number
JPS6038883A
JPS6038883A JP58146320A JP14632083A JPS6038883A JP S6038883 A JPS6038883 A JP S6038883A JP 58146320 A JP58146320 A JP 58146320A JP 14632083 A JP14632083 A JP 14632083A JP S6038883 A JPS6038883 A JP S6038883A
Authority
JP
Japan
Prior art keywords
lift
material layer
gate
semiconductor layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58146320A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0439773B2 (enrdf_load_stackoverflow
Inventor
Hideyuki Hosoe
細江　英之
Hirotaka Nishizawa
裕孝 西沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58146320A priority Critical patent/JPS6038883A/ja
Publication of JPS6038883A publication Critical patent/JPS6038883A/ja
Publication of JPH0439773B2 publication Critical patent/JPH0439773B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58146320A 1983-08-12 1983-08-12 ショットキゲ−ト型ｆｅｔの製造方法 Granted JPS6038883A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58146320A JPS6038883A (ja) 1983-08-12 1983-08-12 ショットキゲ−ト型ｆｅｔの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58146320A JPS6038883A (ja) 1983-08-12 1983-08-12 ショットキゲ−ト型ｆｅｔの製造方法

Publications (2)

Publication Number Publication Date
JPS6038883A true JPS6038883A (ja) 1985-02-28
JPH0439773B2 JPH0439773B2 (enrdf_load_stackoverflow) 1992-06-30

Family

ID=15404998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58146320A Granted JPS6038883A (ja) 1983-08-12 1983-08-12 ショットキゲ−ト型ｆｅｔの製造方法

Country Status (1)

Country Link
JP (1) JPS6038883A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6337701A (ja) * 1986-07-31 1988-02-18 Nippon Dengiyou Kosaku Kk 複合形帯域阻止ろ波器
WO2007072247A3 (en) * 2005-12-22 2007-10-25 Koninkl Philips Electronics Nv An improved lift-off technique suitable for nanometer-scale patterning of metal layers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6337701A (ja) * 1986-07-31 1988-02-18 Nippon Dengiyou Kosaku Kk 複合形帯域阻止ろ波器
WO2007072247A3 (en) * 2005-12-22 2007-10-25 Koninkl Philips Electronics Nv An improved lift-off technique suitable for nanometer-scale patterning of metal layers

Also Published As

Publication number Publication date
JPH0439773B2 (enrdf_load_stackoverflow) 1992-06-30

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