JPS6037550A - ポジ型感光性耐熱材料 - Google Patents
ポジ型感光性耐熱材料Info
- Publication number
- JPS6037550A JPS6037550A JP14610783A JP14610783A JPS6037550A JP S6037550 A JPS6037550 A JP S6037550A JP 14610783 A JP14610783 A JP 14610783A JP 14610783 A JP14610783 A JP 14610783A JP S6037550 A JPS6037550 A JP S6037550A
- Authority
- JP
- Japan
- Prior art keywords
- polymer
- formula
- photosensitive material
- relief pattern
- residue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title abstract description 15
- 229920000642 polymer Polymers 0.000 claims abstract description 20
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims abstract description 6
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims abstract description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 3
- 239000003779 heat-resistant material Substances 0.000 claims description 12
- 241000254158 Lampyridae Species 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 abstract description 11
- 239000004642 Polyimide Substances 0.000 abstract description 9
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 3
- 239000002904 solvent Substances 0.000 abstract description 3
- 125000006158 tetracarboxylic acid group Chemical group 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract 1
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 229920005575 poly(amic acid) Polymers 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000012153 distilled water Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- -1 dicarboxyphenyl Chemical group 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 235000019445 benzyl alcohol Nutrition 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 125000005442 diisocyanate group Chemical group 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 2
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 2
- BWRBVBFLFQKBPT-UHFFFAOYSA-N (2-nitrophenyl)methanol Chemical compound OCC1=CC=CC=C1[N+]([O-])=O BWRBVBFLFQKBPT-UHFFFAOYSA-N 0.000 description 1
- ZXHZWRZAWJVPIC-UHFFFAOYSA-N 1,2-diisocyanatonaphthalene Chemical compound C1=CC=CC2=C(N=C=O)C(N=C=O)=CC=C21 ZXHZWRZAWJVPIC-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- OPWQHYSPLFFRMU-UHFFFAOYSA-N 1-trimethoxysilylpropan-1-amine Chemical compound CCC(N)[Si](OC)(OC)OC OPWQHYSPLFFRMU-UHFFFAOYSA-N 0.000 description 1
- BUJUURFYPIPOJV-UHFFFAOYSA-N 3-phenyl-3H-indene-1,2-diamine Chemical compound NC1=C(C(C2=CC=CC=C12)C1=CC=CC=C1)N BUJUURFYPIPOJV-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- CQMIJLIXKMKFQW-UHFFFAOYSA-N 4-phenylbenzene-1,2,3,5-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C1C1=CC=CC=C1 CQMIJLIXKMKFQW-UHFFFAOYSA-N 0.000 description 1
- CNODSORTHKVDEM-UHFFFAOYSA-N 4-trimethoxysilylaniline Chemical compound CO[Si](OC)(OC)C1=CC=C(N)C=C1 CNODSORTHKVDEM-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- ZTCFKBWDKVMLMM-UHFFFAOYSA-N N=C=O.N=C=O.C=1C=CC=CC=1C(=O)C1=CC=CC=C1 Chemical compound N=C=O.N=C=O.C=1C=CC=CC=1C(=O)C1=CC=CC=C1 ZTCFKBWDKVMLMM-UHFFFAOYSA-N 0.000 description 1
- WMTLVUCMBWBYSO-UHFFFAOYSA-N N=C=O.N=C=O.C=1C=CC=CC=1OC1=CC=CC=C1 Chemical compound N=C=O.N=C=O.C=1C=CC=CC=1OC1=CC=CC=C1 WMTLVUCMBWBYSO-UHFFFAOYSA-N 0.000 description 1
- AXCSBFRIHQXBSG-UHFFFAOYSA-N N=C=O.N=C=O.C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 Chemical compound N=C=O.N=C=O.C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 AXCSBFRIHQXBSG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003872 anastomosis Effects 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- FNGBYWBFWZVPPV-UHFFFAOYSA-N benzene-1,2,4,5-tetracarbonyl chloride Chemical compound ClC(=O)C1=CC(C(Cl)=O)=C(C(Cl)=O)C=C1C(Cl)=O FNGBYWBFWZVPPV-UHFFFAOYSA-N 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000026030 halogenation Effects 0.000 description 1
- 238000005658 halogenation reaction Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- XUZLXCQFXTZASF-UHFFFAOYSA-N nitro(phenyl)methanol Chemical compound [O-][N+](=O)C(O)C1=CC=CC=C1 XUZLXCQFXTZASF-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14610783A JPS6037550A (ja) | 1983-08-09 | 1983-08-09 | ポジ型感光性耐熱材料 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14610783A JPS6037550A (ja) | 1983-08-09 | 1983-08-09 | ポジ型感光性耐熱材料 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6037550A true JPS6037550A (ja) | 1985-02-26 |
| JPH0159571B2 JPH0159571B2 (enrdf_load_stackoverflow) | 1989-12-18 |
Family
ID=15400303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14610783A Granted JPS6037550A (ja) | 1983-08-09 | 1983-08-09 | ポジ型感光性耐熱材料 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6037550A (enrdf_load_stackoverflow) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63191831A (ja) * | 1986-09-04 | 1988-08-09 | Kanegafuchi Chem Ind Co Ltd | 感光性両性高分子化合物およびその製造法 |
| JPH01232037A (ja) * | 1988-03-11 | 1989-09-18 | Kanegafuchi Chem Ind Co Ltd | 感光性両性高分子化合物の薄膜を含む複合物品 |
| US5043248A (en) * | 1986-09-04 | 1991-08-27 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Photosensitive amhilphilic high polymers and process for producing them |
| US6232032B1 (en) | 1998-05-29 | 2001-05-15 | Hitachi Chemical Dupont Microsystems L.L.C. | Photosensitive polymer composition, method for forming relief patterns, and electronic parts |
| US6541178B2 (en) | 1999-12-29 | 2003-04-01 | Samsung Electronics Co., Ltd. | Ion-type photoacid generator containing naphthol and photosensitive polyimide composition prepared by using the same |
| US6600006B2 (en) | 2000-12-29 | 2003-07-29 | Samsung Electronics Co., Ltd. | Positive-type photosensitive polyimide precursor and composition comprising the same |
| WO2005069075A1 (ja) | 2004-01-14 | 2005-07-28 | Hitachi Chemical Dupont Microsystems Ltd. | 感光性重合体組成物、パターンの製造法及び電子部品 |
| US7157204B2 (en) | 2002-11-07 | 2007-01-02 | Samsung Electronics Co., Ltd. | Soluble polyimide for photosensitive polyimide precursor and photosensitive polyimide precursor composition comprising the soluble polyimide |
| JP2008103660A (ja) * | 2006-09-19 | 2008-05-01 | Hitachi Chemical Dupont Microsystems Ltd | 樹脂膜形成方法、レリーフパターンの製造方法及び電子部品 |
| US8758976B2 (en) | 2008-03-07 | 2014-06-24 | Lg Chem Ltd. | Positive photosensitive polyimide composition |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW442688B (en) | 1998-07-15 | 2001-06-23 | Hitachi Ltd | Reflective liquid crystal display device and its manufacture |
| JP2024118847A (ja) | 2023-02-21 | 2024-09-02 | 富士フイルムビジネスイノベーション株式会社 | 印刷システム、印刷方法、印刷物の製造方法及び制御装置 |
-
1983
- 1983-08-09 JP JP14610783A patent/JPS6037550A/ja active Granted
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63191831A (ja) * | 1986-09-04 | 1988-08-09 | Kanegafuchi Chem Ind Co Ltd | 感光性両性高分子化合物およびその製造法 |
| US5043248A (en) * | 1986-09-04 | 1991-08-27 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Photosensitive amhilphilic high polymers and process for producing them |
| JPH01232037A (ja) * | 1988-03-11 | 1989-09-18 | Kanegafuchi Chem Ind Co Ltd | 感光性両性高分子化合物の薄膜を含む複合物品 |
| US6232032B1 (en) | 1998-05-29 | 2001-05-15 | Hitachi Chemical Dupont Microsystems L.L.C. | Photosensitive polymer composition, method for forming relief patterns, and electronic parts |
| US6365306B2 (en) | 1998-05-29 | 2002-04-02 | Hitachi Chemical Dupont Microsystems L.L.C. | Photosensitive polymer composition, method for forming relief patterns, and electronic parts |
| US6541178B2 (en) | 1999-12-29 | 2003-04-01 | Samsung Electronics Co., Ltd. | Ion-type photoacid generator containing naphthol and photosensitive polyimide composition prepared by using the same |
| US6600006B2 (en) | 2000-12-29 | 2003-07-29 | Samsung Electronics Co., Ltd. | Positive-type photosensitive polyimide precursor and composition comprising the same |
| US7157204B2 (en) | 2002-11-07 | 2007-01-02 | Samsung Electronics Co., Ltd. | Soluble polyimide for photosensitive polyimide precursor and photosensitive polyimide precursor composition comprising the soluble polyimide |
| WO2005069075A1 (ja) | 2004-01-14 | 2005-07-28 | Hitachi Chemical Dupont Microsystems Ltd. | 感光性重合体組成物、パターンの製造法及び電子部品 |
| US8231959B2 (en) | 2004-01-14 | 2012-07-31 | Hitachi Chemical Dupont Microsystems Ltd. | Photosensitive polymer composition, method of producing pattern and electronic parts |
| US8852726B2 (en) | 2004-01-14 | 2014-10-07 | Hitachi Chemical Dupont Microsystems Ltd. | Photosensitive polymer composition, method of producing pattern and electronic parts |
| JP2008103660A (ja) * | 2006-09-19 | 2008-05-01 | Hitachi Chemical Dupont Microsystems Ltd | 樹脂膜形成方法、レリーフパターンの製造方法及び電子部品 |
| US8758976B2 (en) | 2008-03-07 | 2014-06-24 | Lg Chem Ltd. | Positive photosensitive polyimide composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0159571B2 (enrdf_load_stackoverflow) | 1989-12-18 |
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