JPS6037118A - プラズマ気相反応方法 - Google Patents

プラズマ気相反応方法

Info

Publication number
JPS6037118A
JPS6037118A JP58145264A JP14526483A JPS6037118A JP S6037118 A JPS6037118 A JP S6037118A JP 58145264 A JP58145264 A JP 58145264A JP 14526483 A JP14526483 A JP 14526483A JP S6037118 A JPS6037118 A JP S6037118A
Authority
JP
Japan
Prior art keywords
electrode
discharge
region
opened
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58145264A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0568097B2 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Katsuhiko Shibata
克彦 柴田
Akira Mase
晃 間瀬
Kazuo Urata
一男 浦田
Hisato Shinohara
篠原　久人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58145264A priority Critical patent/JPS6037118A/ja
Publication of JPS6037118A publication Critical patent/JPS6037118A/ja
Publication of JPH0568097B2 publication Critical patent/JPH0568097B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H10P14/3408—

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
JP58145264A 1983-08-08 1983-08-08 プラズマ気相反応方法 Granted JPS6037118A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58145264A JPS6037118A (ja) 1983-08-08 1983-08-08 プラズマ気相反応方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58145264A JPS6037118A (ja) 1983-08-08 1983-08-08 プラズマ気相反応方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP5134140A Division JP2564753B2 (ja) 1993-05-13 1993-05-13 プラズマ気相反応方法
JP6284147A Division JP2816943B2 (ja) 1994-10-25 1994-10-25 プラズマ気相反応方法

Publications (2)

Publication Number Publication Date
JPS6037118A true JPS6037118A (ja) 1985-02-26
JPH0568097B2 JPH0568097B2 (enExample) 1993-09-28

Family

ID=15381105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58145264A Granted JPS6037118A (ja) 1983-08-08 1983-08-08 プラズマ気相反応方法

Country Status (1)

Country Link
JP (1) JPS6037118A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05144595A (ja) * 1991-11-22 1993-06-11 Semiconductor Energy Lab Co Ltd プラズマ処理装置
JPH0620976A (ja) * 1983-08-08 1994-01-28 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置およびプラズマ気相反応方法
JPH06140347A (ja) * 1993-05-13 1994-05-20 Semiconductor Energy Lab Co Ltd プラズマ気相反応方法
US5773100A (en) * 1987-08-14 1998-06-30 Applied Materials, Inc PECVD of silicon nitride films
US8252669B2 (en) 2009-08-25 2012-08-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film by plasma CVD apparatus
US9177761B2 (en) 2009-08-25 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Plasma CVD apparatus, method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491048A (en) * 1977-12-05 1979-07-19 Plasma Physics Corp Method of and device for accumulating thin films
JPS5842226A (ja) * 1981-09-07 1983-03-11 Nec Corp プラズマ半導体製造装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491048A (en) * 1977-12-05 1979-07-19 Plasma Physics Corp Method of and device for accumulating thin films
JPS5842226A (ja) * 1981-09-07 1983-03-11 Nec Corp プラズマ半導体製造装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0620976A (ja) * 1983-08-08 1994-01-28 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置およびプラズマ気相反応方法
US5773100A (en) * 1987-08-14 1998-06-30 Applied Materials, Inc PECVD of silicon nitride films
JPH05144595A (ja) * 1991-11-22 1993-06-11 Semiconductor Energy Lab Co Ltd プラズマ処理装置
JPH06140347A (ja) * 1993-05-13 1994-05-20 Semiconductor Energy Lab Co Ltd プラズマ気相反応方法
US8252669B2 (en) 2009-08-25 2012-08-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film by plasma CVD apparatus
US8476638B2 (en) 2009-08-25 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Plasma CVD apparatus
US9177761B2 (en) 2009-08-25 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Plasma CVD apparatus, method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH0568097B2 (enExample) 1993-09-28

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