JPS603152A - アモルフアス半導体装置の製造方法 - Google Patents

アモルフアス半導体装置の製造方法

Info

Publication number
JPS603152A
JPS603152A JP58111472A JP11147283A JPS603152A JP S603152 A JPS603152 A JP S603152A JP 58111472 A JP58111472 A JP 58111472A JP 11147283 A JP11147283 A JP 11147283A JP S603152 A JPS603152 A JP S603152A
Authority
JP
Japan
Prior art keywords
film
thick
layer
amorphous semiconductor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58111472A
Other languages
English (en)
Japanese (ja)
Other versions
JPH028465B2 (cs
Inventor
Masao Funada
船田　雅夫
Masaji Kikuchi
菊池　正次
Hisashi Oguro
小黒　寿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP58111472A priority Critical patent/JPS603152A/ja
Publication of JPS603152A publication Critical patent/JPS603152A/ja
Publication of JPH028465B2 publication Critical patent/JPH028465B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP58111472A 1983-06-21 1983-06-21 アモルフアス半導体装置の製造方法 Granted JPS603152A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58111472A JPS603152A (ja) 1983-06-21 1983-06-21 アモルフアス半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58111472A JPS603152A (ja) 1983-06-21 1983-06-21 アモルフアス半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS603152A true JPS603152A (ja) 1985-01-09
JPH028465B2 JPH028465B2 (cs) 1990-02-23

Family

ID=14562109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58111472A Granted JPS603152A (ja) 1983-06-21 1983-06-21 アモルフアス半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS603152A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04129035U (ja) * 1991-05-17 1992-11-25 ホシザキ電機株式会社 冷媒凝縮器の支持構造

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04129035U (ja) * 1991-05-17 1992-11-25 ホシザキ電機株式会社 冷媒凝縮器の支持構造

Also Published As

Publication number Publication date
JPH028465B2 (cs) 1990-02-23

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