JPS60261108A - 厚膜型正特性半導体素子の製造方法 - Google Patents
厚膜型正特性半導体素子の製造方法Info
- Publication number
- JPS60261108A JPS60261108A JP11702284A JP11702284A JPS60261108A JP S60261108 A JPS60261108 A JP S60261108A JP 11702284 A JP11702284 A JP 11702284A JP 11702284 A JP11702284 A JP 11702284A JP S60261108 A JPS60261108 A JP S60261108A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- powder
- semiconductor element
- temperature coefficient
- positive temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 238000000034 method Methods 0.000 title claims description 12
- 239000000843 powder Substances 0.000 claims description 22
- 229910005487 Ni2Si Inorganic materials 0.000 claims description 9
- 229910005883 NiSi Inorganic materials 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 229910003217 Ni3Si Inorganic materials 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 18
- 239000011521 glass Substances 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 12
- 229910005108 Ni3Si2 Inorganic materials 0.000 description 6
- 239000002482 conductive additive Substances 0.000 description 6
- 229910002113 barium titanate Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 2
- 229940088601 alpha-terpineol Drugs 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 229910002226 La2O2 Inorganic materials 0.000 description 1
- 229910019704 Nb2O Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11702284A JPS60261108A (ja) | 1984-06-07 | 1984-06-07 | 厚膜型正特性半導体素子の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11702284A JPS60261108A (ja) | 1984-06-07 | 1984-06-07 | 厚膜型正特性半導体素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60261108A true JPS60261108A (ja) | 1985-12-24 |
JPH0534807B2 JPH0534807B2 (enrdf_load_stackoverflow) | 1993-05-25 |
Family
ID=14701503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11702284A Granted JPS60261108A (ja) | 1984-06-07 | 1984-06-07 | 厚膜型正特性半導体素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60261108A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015524996A (ja) * | 2012-04-18 | 2015-08-27 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | ニッケル金属間組成物を有する太陽電池接点 |
-
1984
- 1984-06-07 JP JP11702284A patent/JPS60261108A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015524996A (ja) * | 2012-04-18 | 2015-08-27 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | ニッケル金属間組成物を有する太陽電池接点 |
US9818890B2 (en) | 2012-04-18 | 2017-11-14 | Ferro Corporation | Solar cell contacts with nickel intermetallic compositions |
Also Published As
Publication number | Publication date |
---|---|
JPH0534807B2 (enrdf_load_stackoverflow) | 1993-05-25 |
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