JPS60254657A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS60254657A JPS60254657A JP59109436A JP10943684A JPS60254657A JP S60254657 A JPS60254657 A JP S60254657A JP 59109436 A JP59109436 A JP 59109436A JP 10943684 A JP10943684 A JP 10943684A JP S60254657 A JPS60254657 A JP S60254657A
- Authority
- JP
- Japan
- Prior art keywords
- base
- emitter
- collector
- potential barrier
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
- H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Transistors (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59109436A JPS60254657A (ja) | 1984-05-31 | 1984-05-31 | 半導体装置 |
CA000478704A CA1237824A (en) | 1984-04-17 | 1985-04-10 | Resonant tunneling semiconductor device |
EP85400744A EP0159273B1 (en) | 1984-04-17 | 1985-04-16 | Semiconductor device |
DE8585400744T DE3583302D1 (de) | 1984-04-17 | 1985-04-16 | Halbleiteranordnung. |
KR1019850002594A KR900004466B1 (ko) | 1984-04-17 | 1985-04-17 | 반도체 장치 |
US07/059,216 US4958201A (en) | 1984-04-17 | 1987-06-05 | Resonant tunneling minority carrier transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59109436A JPS60254657A (ja) | 1984-05-31 | 1984-05-31 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60254657A true JPS60254657A (ja) | 1985-12-16 |
JPH0337737B2 JPH0337737B2 (enrdf_load_stackoverflow) | 1991-06-06 |
Family
ID=14510195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59109436A Granted JPS60254657A (ja) | 1984-04-17 | 1984-05-31 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60254657A (enrdf_load_stackoverflow) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62217658A (ja) * | 1986-03-18 | 1987-09-25 | Fujitsu Ltd | 共鳴トンネル半導体装置 |
JPS62229878A (ja) * | 1986-03-04 | 1987-10-08 | Fujitsu Ltd | 高速半導体装置 |
JPS6331165A (ja) * | 1986-07-18 | 1988-02-09 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 共鳴トンネリング半導体デバイス |
JPS63199511A (ja) * | 1987-02-14 | 1988-08-18 | Fujitsu Ltd | 比較回路 |
JPH08213408A (ja) * | 1995-10-27 | 1996-08-20 | Nec Corp | 高注入効率半導体接合 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51128268A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
JPS52105785A (en) * | 1976-02-27 | 1977-09-05 | Max Planck Gesellschaft | Multiilayer semiconductor element |
-
1984
- 1984-05-31 JP JP59109436A patent/JPS60254657A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51128268A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
JPS52105785A (en) * | 1976-02-27 | 1977-09-05 | Max Planck Gesellschaft | Multiilayer semiconductor element |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62229878A (ja) * | 1986-03-04 | 1987-10-08 | Fujitsu Ltd | 高速半導体装置 |
JPS62217658A (ja) * | 1986-03-18 | 1987-09-25 | Fujitsu Ltd | 共鳴トンネル半導体装置 |
JPS6331165A (ja) * | 1986-07-18 | 1988-02-09 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 共鳴トンネリング半導体デバイス |
JPS63199511A (ja) * | 1987-02-14 | 1988-08-18 | Fujitsu Ltd | 比較回路 |
JPH08213408A (ja) * | 1995-10-27 | 1996-08-20 | Nec Corp | 高注入効率半導体接合 |
Also Published As
Publication number | Publication date |
---|---|
JPH0337737B2 (enrdf_load_stackoverflow) | 1991-06-06 |
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