JPH0546975B2 - - Google Patents

Info

Publication number
JPH0546975B2
JPH0546975B2 JP62149541A JP14954187A JPH0546975B2 JP H0546975 B2 JPH0546975 B2 JP H0546975B2 JP 62149541 A JP62149541 A JP 62149541A JP 14954187 A JP14954187 A JP 14954187A JP H0546975 B2 JPH0546975 B2 JP H0546975B2
Authority
JP
Japan
Prior art keywords
current path
channel
electrons
electron
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62149541A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63312684A (ja
Inventor
Eiji Suematsu
Tatsuya Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62149541A priority Critical patent/JPS63312684A/ja
Publication of JPS63312684A publication Critical patent/JPS63312684A/ja
Publication of JPH0546975B2 publication Critical patent/JPH0546975B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/161—Source or drain regions of field-effect devices of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
JP62149541A 1987-06-16 1987-06-16 電界効果トランジスタ Granted JPS63312684A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62149541A JPS63312684A (ja) 1987-06-16 1987-06-16 電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62149541A JPS63312684A (ja) 1987-06-16 1987-06-16 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS63312684A JPS63312684A (ja) 1988-12-21
JPH0546975B2 true JPH0546975B2 (enrdf_load_stackoverflow) 1993-07-15

Family

ID=15477399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62149541A Granted JPS63312684A (ja) 1987-06-16 1987-06-16 電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS63312684A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5313093A (en) * 1991-10-29 1994-05-17 Rohm Co., Ltd. Compound semiconductor device

Also Published As

Publication number Publication date
JPS63312684A (ja) 1988-12-21

Similar Documents

Publication Publication Date Title
EP0549373B1 (en) Tunnel transistor and method of manufacturing same
JPH07115207A (ja) 量子効果デバイス
JPH088350B2 (ja) 半導体装置
JPS6342864B2 (enrdf_load_stackoverflow)
US5026655A (en) Process of fabricating a heterojunction field effect transistor
JPS59207667A (ja) 半導体装置
JPH0312769B2 (enrdf_load_stackoverflow)
KR950007350B1 (ko) 반도체장치
JPH0546975B2 (enrdf_load_stackoverflow)
JPS6255314B2 (enrdf_load_stackoverflow)
JPS60254657A (ja) 半導体装置
KR910006698B1 (ko) 반도체 장치
JPS61276269A (ja) ヘテロ接合型電界効果トランジスタ
JPH0546974B2 (enrdf_load_stackoverflow)
JP3304343B2 (ja) 電界効果トランジスタ
JPS63314866A (ja) バイボ−ラ・トランジスタ
JP2504442B2 (ja) 半導体素子
JPS61144070A (ja) 半導体装置
JP2911075B2 (ja) 電界効果トランジスタ
JPH0513462A (ja) 化合物半導体構造
JPH01244662A (ja) 半導体装置
JPS60145671A (ja) 集積型半導体装置
JPH02330A (ja) 電界効果トランジスタ
JPH10163226A (ja) 半導体装置
JPH0327537A (ja) 変調ドープ型電界効果トランジスタ