JPS6255314B2 - - Google Patents
Info
- Publication number
- JPS6255314B2 JPS6255314B2 JP57139686A JP13968682A JPS6255314B2 JP S6255314 B2 JPS6255314 B2 JP S6255314B2 JP 57139686 A JP57139686 A JP 57139686A JP 13968682 A JP13968682 A JP 13968682A JP S6255314 B2 JPS6255314 B2 JP S6255314B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate electrode
- quasi
- gaas
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 239000003574 free electron Substances 0.000 claims description 2
- 239000006251 one-dimensional electron gas Substances 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 22
- 239000012212 insulator Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004969 ion scattering spectroscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57139686A JPS5931071A (ja) | 1982-08-13 | 1982-08-13 | 電界効果トランジスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57139686A JPS5931071A (ja) | 1982-08-13 | 1982-08-13 | 電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5931071A JPS5931071A (ja) | 1984-02-18 |
JPS6255314B2 true JPS6255314B2 (enrdf_load_stackoverflow) | 1987-11-19 |
Family
ID=15251063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57139686A Granted JPS5931071A (ja) | 1982-08-13 | 1982-08-13 | 電界効果トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5931071A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4575924A (en) * | 1984-07-02 | 1986-03-18 | Texas Instruments Incorporated | Process for fabricating quantum-well devices utilizing etch and refill techniques |
JPS6230380A (ja) * | 1985-03-11 | 1987-02-09 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果型トランジスタ |
JPS61239267A (ja) * | 1985-04-17 | 1986-10-24 | Fuji Xerox Co Ltd | カラ−複写機の現像装置 |
JPS63102374A (ja) * | 1986-09-29 | 1988-05-07 | シーメンス、アクチエンゲゼルシヤフト | 電界効果トランジスタ |
JPS63232374A (ja) * | 1987-03-20 | 1988-09-28 | Fujitsu Ltd | 半導体装置 |
-
1982
- 1982-08-13 JP JP57139686A patent/JPS5931071A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5931071A (ja) | 1984-02-18 |
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