JPS6024592B2 - ワイドギヤツプエミツタトランジスタの製造方法 - Google Patents

ワイドギヤツプエミツタトランジスタの製造方法

Info

Publication number
JPS6024592B2
JPS6024592B2 JP50010494A JP1049475A JPS6024592B2 JP S6024592 B2 JPS6024592 B2 JP S6024592B2 JP 50010494 A JP50010494 A JP 50010494A JP 1049475 A JP1049475 A JP 1049475A JP S6024592 B2 JPS6024592 B2 JP S6024592B2
Authority
JP
Japan
Prior art keywords
layer
base layer
semiconductor
base
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50010494A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5185677A (enExample
Inventor
俊久 塚田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50010494A priority Critical patent/JPS6024592B2/ja
Publication of JPS5185677A publication Critical patent/JPS5185677A/ja
Publication of JPS6024592B2 publication Critical patent/JPS6024592B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP50010494A 1975-01-27 1975-01-27 ワイドギヤツプエミツタトランジスタの製造方法 Expired JPS6024592B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50010494A JPS6024592B2 (ja) 1975-01-27 1975-01-27 ワイドギヤツプエミツタトランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50010494A JPS6024592B2 (ja) 1975-01-27 1975-01-27 ワイドギヤツプエミツタトランジスタの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59072772A Division JPS6035570A (ja) 1984-04-13 1984-04-13 ワイドギヤツプエミツタトランジスタ

Publications (2)

Publication Number Publication Date
JPS5185677A JPS5185677A (enExample) 1976-07-27
JPS6024592B2 true JPS6024592B2 (ja) 1985-06-13

Family

ID=11751729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50010494A Expired JPS6024592B2 (ja) 1975-01-27 1975-01-27 ワイドギヤツプエミツタトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6024592B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106724B1 (fr) * 1982-09-17 1989-06-07 ETAT FRANCAIS représenté par le Ministre des PTT (Centre National d'Etudes des Télécommunications) Transistor bipolaire balistique à hétérojonction
JPS6010774A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
JPS6050957A (ja) * 1983-08-31 1985-03-22 Fujitsu Ltd ヘテロ接合バイポ−ラ半導体装置
JPS60253267A (ja) * 1984-05-29 1985-12-13 Toshiba Corp ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS61182257A (ja) * 1985-02-08 1986-08-14 Nec Corp ヘテロ接合バイポ−ラトランジスタ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559830B2 (enExample) * 1973-01-24 1980-03-12

Also Published As

Publication number Publication date
JPS5185677A (enExample) 1976-07-27

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