JPH051631B2 - - Google Patents
Info
- Publication number
- JPH051631B2 JPH051631B2 JP58210650A JP21065083A JPH051631B2 JP H051631 B2 JPH051631 B2 JP H051631B2 JP 58210650 A JP58210650 A JP 58210650A JP 21065083 A JP21065083 A JP 21065083A JP H051631 B2 JPH051631 B2 JP H051631B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- carrier concentration
- thickness
- active region
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58210650A JPS60102774A (ja) | 1983-11-09 | 1983-11-09 | 半導体素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58210650A JPS60102774A (ja) | 1983-11-09 | 1983-11-09 | 半導体素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60102774A JPS60102774A (ja) | 1985-06-06 |
| JPH051631B2 true JPH051631B2 (enExample) | 1993-01-08 |
Family
ID=16592817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58210650A Granted JPS60102774A (ja) | 1983-11-09 | 1983-11-09 | 半導体素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60102774A (enExample) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513990A (en) * | 1978-07-18 | 1980-01-31 | Nec Corp | Semiconductor device |
| JPS5572083A (en) * | 1978-11-27 | 1980-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo-detector |
| JPS58139464A (ja) * | 1982-02-15 | 1983-08-18 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
-
1983
- 1983-11-09 JP JP58210650A patent/JPS60102774A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60102774A (ja) | 1985-06-06 |
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