JPS60102774A - 半導体素子及びその製造方法 - Google Patents

半導体素子及びその製造方法

Info

Publication number
JPS60102774A
JPS60102774A JP58210650A JP21065083A JPS60102774A JP S60102774 A JPS60102774 A JP S60102774A JP 58210650 A JP58210650 A JP 58210650A JP 21065083 A JP21065083 A JP 21065083A JP S60102774 A JPS60102774 A JP S60102774A
Authority
JP
Japan
Prior art keywords
semiconductor layer
thickness
active region
carrier concentration
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58210650A
Other languages
English (en)
Japanese (ja)
Other versions
JPH051631B2 (enExample
Inventor
Kazuo Sakai
堺　和夫
Yuichi Matsushima
松島　裕一
Shigeyuki Akiba
重幸 秋葉
Katsuyuki Uko
宇高　勝之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP58210650A priority Critical patent/JPS60102774A/ja
Publication of JPS60102774A publication Critical patent/JPS60102774A/ja
Publication of JPH051631B2 publication Critical patent/JPH051631B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes

Landscapes

  • Light Receiving Elements (AREA)
JP58210650A 1983-11-09 1983-11-09 半導体素子及びその製造方法 Granted JPS60102774A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58210650A JPS60102774A (ja) 1983-11-09 1983-11-09 半導体素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58210650A JPS60102774A (ja) 1983-11-09 1983-11-09 半導体素子及びその製造方法

Publications (2)

Publication Number Publication Date
JPS60102774A true JPS60102774A (ja) 1985-06-06
JPH051631B2 JPH051631B2 (enExample) 1993-01-08

Family

ID=16592817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58210650A Granted JPS60102774A (ja) 1983-11-09 1983-11-09 半導体素子及びその製造方法

Country Status (1)

Country Link
JP (1) JPS60102774A (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513990A (en) * 1978-07-18 1980-01-31 Nec Corp Semiconductor device
JPS5572083A (en) * 1978-11-27 1980-05-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo-detector
JPS58139464A (ja) * 1982-02-15 1983-08-18 Semiconductor Energy Lab Co Ltd 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513990A (en) * 1978-07-18 1980-01-31 Nec Corp Semiconductor device
JPS5572083A (en) * 1978-11-27 1980-05-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo-detector
JPS58139464A (ja) * 1982-02-15 1983-08-18 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPH051631B2 (enExample) 1993-01-08

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