JPS60198761A - ろう付け方法 - Google Patents
ろう付け方法Info
- Publication number
- JPS60198761A JPS60198761A JP5491084A JP5491084A JPS60198761A JP S60198761 A JPS60198761 A JP S60198761A JP 5491084 A JP5491084 A JP 5491084A JP 5491084 A JP5491084 A JP 5491084A JP S60198761 A JPS60198761 A JP S60198761A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- layer
- ceramic substrate
- brazing
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000005476 soldering Methods 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000000919 ceramic Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000010936 titanium Substances 0.000 claims abstract description 13
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 13
- 230000000737 periodic effect Effects 0.000 claims abstract description 5
- 238000005219 brazing Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 11
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract description 11
- 238000007747 plating Methods 0.000 abstract description 6
- 229910052763 palladium Inorganic materials 0.000 abstract description 5
- 229910000679 solder Inorganic materials 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 229910052718 tin Inorganic materials 0.000 abstract description 5
- 229910045601 alloy Inorganic materials 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 abstract description 4
- 230000007935 neutral effect Effects 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 22
- 229910052737 gold Inorganic materials 0.000 description 22
- 239000010931 gold Substances 0.000 description 22
- 239000010410 layer Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 18
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 13
- 239000004020 conductor Substances 0.000 description 13
- 229910052750 molybdenum Inorganic materials 0.000 description 13
- 239000011733 molybdenum Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000004859 Copal Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000782205 Guibourtia conjugata Species 0.000 description 1
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5491084A JPS60198761A (ja) | 1984-03-22 | 1984-03-22 | ろう付け方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5491084A JPS60198761A (ja) | 1984-03-22 | 1984-03-22 | ろう付け方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60198761A true JPS60198761A (ja) | 1985-10-08 |
JPH0227817B2 JPH0227817B2 (enrdf_load_stackoverflow) | 1990-06-20 |
Family
ID=12983753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5491084A Granted JPS60198761A (ja) | 1984-03-22 | 1984-03-22 | ろう付け方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60198761A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004034450A1 (en) * | 2002-10-11 | 2004-04-22 | Tm Tech Co., Ltd. | A sputtering apparatus having enhanced adhesivity of particles and a manufacturing method thereof |
WO2004055873A1 (en) * | 2002-12-14 | 2004-07-01 | Tm Tech Co., Ltd. | Thin film forming apparatus |
CN113242650A (zh) * | 2021-05-20 | 2021-08-10 | 上海望友信息科技有限公司 | 一种喷涂图形生成方法、系统、电子设备及存储介质 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58119663A (ja) * | 1981-12-31 | 1983-07-16 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 接続ピンの結合方法 |
-
1984
- 1984-03-22 JP JP5491084A patent/JPS60198761A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58119663A (ja) * | 1981-12-31 | 1983-07-16 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 接続ピンの結合方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004034450A1 (en) * | 2002-10-11 | 2004-04-22 | Tm Tech Co., Ltd. | A sputtering apparatus having enhanced adhesivity of particles and a manufacturing method thereof |
WO2004055873A1 (en) * | 2002-12-14 | 2004-07-01 | Tm Tech Co., Ltd. | Thin film forming apparatus |
CN113242650A (zh) * | 2021-05-20 | 2021-08-10 | 上海望友信息科技有限公司 | 一种喷涂图形生成方法、系统、电子设备及存储介质 |
CN113242650B (zh) * | 2021-05-20 | 2022-04-15 | 上海望友信息科技有限公司 | 一种喷涂图形生成方法、系统、电子设备及存储介质 |
Also Published As
Publication number | Publication date |
---|---|
JPH0227817B2 (enrdf_load_stackoverflow) | 1990-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4463059A (en) | Layered metal film structures for LSI chip carriers adapted for solder bonding and wire bonding | |
US6159586A (en) | Multilayer wiring substrate and method for producing the same | |
CN111446212B (zh) | 一种陶瓷一体化封装外壳及其制作工艺 | |
JPS60198761A (ja) | ろう付け方法 | |
JPH08306816A (ja) | 電極パッド | |
JPH11163522A (ja) | 多層配線基板およびその製造方法 | |
JPS5850421B2 (ja) | 薄膜回路 | |
JPH0230185B2 (enrdf_load_stackoverflow) | ||
JP2627509B2 (ja) | 導電層を有する電子部品 | |
JP3723350B2 (ja) | 配線基板およびその製造方法 | |
JP2942424B2 (ja) | 半導体素子収納用パッケージ | |
JPH0590761A (ja) | 配線基板の製造方法 | |
JPS6196754A (ja) | ピン付き基板 | |
JPH11204941A (ja) | 回路基板の製造方法 | |
JPH0760882B2 (ja) | ろう付け方法 | |
JPS60198763A (ja) | ピン付基板およびその製造方法 | |
JPS6181659A (ja) | ピン付き基板 | |
JPH05267496A (ja) | セラミックス配線基板の製造方法 | |
JPS60198893A (ja) | ピン付き多層セラミツク基板の製造方法 | |
JPH11307688A (ja) | 配線基板及びその製造方法 | |
JPH10139559A (ja) | ガラスセラミック基板及びその製造方法 | |
JPS60198762A (ja) | ピン付基板およびその製造方法 | |
JP3279846B2 (ja) | 半導体装置の製造方法 | |
JPS60198892A (ja) | ピン付き多層セラミツク基板の製造方法 | |
JPH04324637A (ja) | 薄膜配線回路基板用はんだ付け電極 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |