JPS60182165A - トランジスタおよびその製造方法 - Google Patents

トランジスタおよびその製造方法

Info

Publication number
JPS60182165A
JPS60182165A JP59036668A JP3666884A JPS60182165A JP S60182165 A JPS60182165 A JP S60182165A JP 59036668 A JP59036668 A JP 59036668A JP 3666884 A JP3666884 A JP 3666884A JP S60182165 A JPS60182165 A JP S60182165A
Authority
JP
Japan
Prior art keywords
semiconductor layer
region
emitter
base
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59036668A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464180B2 (enrdf_load_stackoverflow
Inventor
Tetsuo Toyooka
豊岡　哲夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP59036668A priority Critical patent/JPS60182165A/ja
Publication of JPS60182165A publication Critical patent/JPS60182165A/ja
Publication of JPH0464180B2 publication Critical patent/JPH0464180B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP59036668A 1984-02-28 1984-02-28 トランジスタおよびその製造方法 Granted JPS60182165A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59036668A JPS60182165A (ja) 1984-02-28 1984-02-28 トランジスタおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59036668A JPS60182165A (ja) 1984-02-28 1984-02-28 トランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
JPS60182165A true JPS60182165A (ja) 1985-09-17
JPH0464180B2 JPH0464180B2 (enrdf_load_stackoverflow) 1992-10-14

Family

ID=12476232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59036668A Granted JPS60182165A (ja) 1984-02-28 1984-02-28 トランジスタおよびその製造方法

Country Status (1)

Country Link
JP (1) JPS60182165A (enrdf_load_stackoverflow)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211775A (en) * 1981-06-23 1982-12-25 Nec Corp Semiconductor device and manufacture thereof
JPS58102559A (ja) * 1981-12-14 1983-06-18 Fujitsu Ltd 半導体装置およびその製造方法
JPS58102558A (ja) * 1981-12-14 1983-06-18 Fujitsu Ltd 半導体装置およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211775A (en) * 1981-06-23 1982-12-25 Nec Corp Semiconductor device and manufacture thereof
JPS58102559A (ja) * 1981-12-14 1983-06-18 Fujitsu Ltd 半導体装置およびその製造方法
JPS58102558A (ja) * 1981-12-14 1983-06-18 Fujitsu Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH0464180B2 (enrdf_load_stackoverflow) 1992-10-14

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