JPS6211504B2 - - Google Patents
Info
- Publication number
- JPS6211504B2 JPS6211504B2 JP53142373A JP14237378A JPS6211504B2 JP S6211504 B2 JPS6211504 B2 JP S6211504B2 JP 53142373 A JP53142373 A JP 53142373A JP 14237378 A JP14237378 A JP 14237378A JP S6211504 B2 JPS6211504 B2 JP S6211504B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- conductivity type
- semiconductor substrate
- layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Recrystallisation Techniques (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14237378A JPS5568650A (en) | 1978-11-20 | 1978-11-20 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14237378A JPS5568650A (en) | 1978-11-20 | 1978-11-20 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5568650A JPS5568650A (en) | 1980-05-23 |
| JPS6211504B2 true JPS6211504B2 (enrdf_load_stackoverflow) | 1987-03-12 |
Family
ID=15313863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14237378A Granted JPS5568650A (en) | 1978-11-20 | 1978-11-20 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5568650A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2567281Y2 (ja) * | 1991-09-25 | 1998-04-02 | 株式会社ニフコ | 接着ウインドのモール取付装置 |
| US5795809A (en) * | 1995-05-25 | 1998-08-18 | Advanced Micro Devices, Inc. | Semiconductor wafer fabrication process including gettering utilizing a combined oxidation technique |
-
1978
- 1978-11-20 JP JP14237378A patent/JPS5568650A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5568650A (en) | 1980-05-23 |
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