JPH0464180B2 - - Google Patents
Info
- Publication number
- JPH0464180B2 JPH0464180B2 JP59036668A JP3666884A JPH0464180B2 JP H0464180 B2 JPH0464180 B2 JP H0464180B2 JP 59036668 A JP59036668 A JP 59036668A JP 3666884 A JP3666884 A JP 3666884A JP H0464180 B2 JPH0464180 B2 JP H0464180B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor layer
- emitter
- base
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59036668A JPS60182165A (ja) | 1984-02-28 | 1984-02-28 | トランジスタおよびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59036668A JPS60182165A (ja) | 1984-02-28 | 1984-02-28 | トランジスタおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60182165A JPS60182165A (ja) | 1985-09-17 |
JPH0464180B2 true JPH0464180B2 (enrdf_load_stackoverflow) | 1992-10-14 |
Family
ID=12476232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59036668A Granted JPS60182165A (ja) | 1984-02-28 | 1984-02-28 | トランジスタおよびその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60182165A (enrdf_load_stackoverflow) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57211775A (en) * | 1981-06-23 | 1982-12-25 | Nec Corp | Semiconductor device and manufacture thereof |
JPS58102558A (ja) * | 1981-12-14 | 1983-06-18 | Fujitsu Ltd | 半導体装置およびその製造方法 |
JPS58102559A (ja) * | 1981-12-14 | 1983-06-18 | Fujitsu Ltd | 半導体装置およびその製造方法 |
-
1984
- 1984-02-28 JP JP59036668A patent/JPS60182165A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60182165A (ja) | 1985-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5824018B2 (ja) | バイポ−ラicの製造方法 | |
CA1179786A (en) | Lateral transistor structure having self-aligned base and base contact and method of fabrication | |
JPS60175453A (ja) | トランジスタの製造方法 | |
JPH025432A (ja) | 半導体装置の製造方法 | |
US5237200A (en) | Semiconductor bipolar transistor with concentric regions | |
JPH0464179B2 (enrdf_load_stackoverflow) | ||
JPH0464180B2 (enrdf_load_stackoverflow) | ||
JP2890509B2 (ja) | 半導体装置の製造方法 | |
JP2546651B2 (ja) | バイポ−ラトランジスタの製造法 | |
JPS61212062A (ja) | 半導体装置 | |
JPH07114208B2 (ja) | トランジスタの製造方法 | |
JP2546650B2 (ja) | バイポ−ラトランジスタの製造法 | |
JPS6228588B2 (enrdf_load_stackoverflow) | ||
JPH0137856B2 (enrdf_load_stackoverflow) | ||
JPH0797634B2 (ja) | 電界効果トランジスタとその製造方法 | |
JPS58216462A (ja) | 半導体装置及びその製造方法 | |
JPH05109745A (ja) | 半導体装置 | |
JPS58164241A (ja) | 半導体装置の製造方法 | |
JPH01111372A (ja) | 半導体装置の製造方法 | |
JPH0319237A (ja) | 半導体装置の製造方法 | |
JPH0132669B2 (enrdf_load_stackoverflow) | ||
JPS584454B2 (ja) | ハンドウタイソウチノセイゾウホウホウ | |
JPH0684930A (ja) | バイポーラトランジスタの製造方法 | |
JPS59205758A (ja) | トランジスタの製造方法 | |
JPS60140759A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |