JPS60180144A - 半導体素子製造方法 - Google Patents
半導体素子製造方法Info
- Publication number
- JPS60180144A JPS60180144A JP3706984A JP3706984A JPS60180144A JP S60180144 A JPS60180144 A JP S60180144A JP 3706984 A JP3706984 A JP 3706984A JP 3706984 A JP3706984 A JP 3706984A JP S60180144 A JPS60180144 A JP S60180144A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- abrasive grains
- wiring metal
- semiconductor substrate
- window hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000006061 abrasive grain Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000005507 spraying Methods 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 8
- 238000007788 roughening Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 abstract description 3
- 238000007667 floating Methods 0.000 abstract description 3
- 239000000843 powder Substances 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 34
- 239000000243 solution Substances 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3706984A JPS60180144A (ja) | 1984-02-27 | 1984-02-27 | 半導体素子製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3706984A JPS60180144A (ja) | 1984-02-27 | 1984-02-27 | 半導体素子製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60180144A true JPS60180144A (ja) | 1985-09-13 |
| JPH0584063B2 JPH0584063B2 (enExample) | 1993-11-30 |
Family
ID=12487257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3706984A Granted JPS60180144A (ja) | 1984-02-27 | 1984-02-27 | 半導体素子製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60180144A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62188246A (ja) * | 1986-02-13 | 1987-08-17 | Nec Corp | 半導体装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4865271A (enExample) * | 1971-12-13 | 1973-09-08 | ||
| JPS5187578A (ja) * | 1975-01-30 | 1976-07-31 | Matsushita Electric Works Ltd | Kagakumetsukyokibanno seiho |
-
1984
- 1984-02-27 JP JP3706984A patent/JPS60180144A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4865271A (enExample) * | 1971-12-13 | 1973-09-08 | ||
| JPS5187578A (ja) * | 1975-01-30 | 1976-07-31 | Matsushita Electric Works Ltd | Kagakumetsukyokibanno seiho |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62188246A (ja) * | 1986-02-13 | 1987-08-17 | Nec Corp | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0584063B2 (enExample) | 1993-11-30 |
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