JPS60176251A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS60176251A JPS60176251A JP3285684A JP3285684A JPS60176251A JP S60176251 A JPS60176251 A JP S60176251A JP 3285684 A JP3285684 A JP 3285684A JP 3285684 A JP3285684 A JP 3285684A JP S60176251 A JPS60176251 A JP S60176251A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- layer
- wiring layers
- layer wiring
- upper layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 239000010410 layer Substances 0.000 abstract description 58
- 239000002184 metal Substances 0.000 abstract description 9
- 239000012212 insulator Substances 0.000 abstract description 6
- 239000011229 interlayer Substances 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 210000000744 eyelid Anatomy 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3285684A JPS60176251A (ja) | 1984-02-23 | 1984-02-23 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3285684A JPS60176251A (ja) | 1984-02-23 | 1984-02-23 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60176251A true JPS60176251A (ja) | 1985-09-10 |
JPH0230180B2 JPH0230180B2 (enrdf_load_stackoverflow) | 1990-07-04 |
Family
ID=12370479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3285684A Granted JPS60176251A (ja) | 1984-02-23 | 1984-02-23 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60176251A (enrdf_load_stackoverflow) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5317185A (en) * | 1990-11-06 | 1994-05-31 | Motorola, Inc. | Semiconductor device having structures to reduce stress notching effects in conductive lines and method for making the same |
US5462767A (en) * | 1985-09-21 | 1995-10-31 | Semiconductor Energy Laboratory Co., Ltd. | CVD of conformal coatings over a depression using alkylmetal precursors |
US5567989A (en) * | 1993-07-27 | 1996-10-22 | Samsung Electronics Co., Ltd. | Highly integrated semiconductor wiring structure |
US5894170A (en) * | 1996-08-29 | 1999-04-13 | Nec Corporation | Wiring layer in semiconductor device |
JP2010034236A (ja) * | 2008-07-28 | 2010-02-12 | Panasonic Corp | 固体撮像装置及びその製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5791523A (en) * | 1980-11-28 | 1982-06-07 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1984
- 1984-02-23 JP JP3285684A patent/JPS60176251A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5791523A (en) * | 1980-11-28 | 1982-06-07 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5462767A (en) * | 1985-09-21 | 1995-10-31 | Semiconductor Energy Laboratory Co., Ltd. | CVD of conformal coatings over a depression using alkylmetal precursors |
US5317185A (en) * | 1990-11-06 | 1994-05-31 | Motorola, Inc. | Semiconductor device having structures to reduce stress notching effects in conductive lines and method for making the same |
US5567989A (en) * | 1993-07-27 | 1996-10-22 | Samsung Electronics Co., Ltd. | Highly integrated semiconductor wiring structure |
US5894170A (en) * | 1996-08-29 | 1999-04-13 | Nec Corporation | Wiring layer in semiconductor device |
JP2010034236A (ja) * | 2008-07-28 | 2010-02-12 | Panasonic Corp | 固体撮像装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0230180B2 (enrdf_load_stackoverflow) | 1990-07-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |