JPS60170091A - センス回路 - Google Patents

センス回路

Info

Publication number
JPS60170091A
JPS60170091A JP59024577A JP2457784A JPS60170091A JP S60170091 A JPS60170091 A JP S60170091A JP 59024577 A JP59024577 A JP 59024577A JP 2457784 A JP2457784 A JP 2457784A JP S60170091 A JPS60170091 A JP S60170091A
Authority
JP
Japan
Prior art keywords
sense amplifier
sense
output
circuit
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59024577A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0513360B2 (enrdf_load_stackoverflow
Inventor
Kazuhiro Sawada
沢田　和宏
Takayasu Sakurai
貴康 桜井
Mitsuo Isobe
磯部　満郎
Takayuki Otani
大谷　孝之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59024577A priority Critical patent/JPS60170091A/ja
Publication of JPS60170091A publication Critical patent/JPS60170091A/ja
Publication of JPH0513360B2 publication Critical patent/JPH0513360B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP59024577A 1984-02-13 1984-02-13 センス回路 Granted JPS60170091A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59024577A JPS60170091A (ja) 1984-02-13 1984-02-13 センス回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59024577A JPS60170091A (ja) 1984-02-13 1984-02-13 センス回路

Publications (2)

Publication Number Publication Date
JPS60170091A true JPS60170091A (ja) 1985-09-03
JPH0513360B2 JPH0513360B2 (enrdf_load_stackoverflow) 1993-02-22

Family

ID=12142019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59024577A Granted JPS60170091A (ja) 1984-02-13 1984-02-13 センス回路

Country Status (1)

Country Link
JP (1) JPS60170091A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62140292A (ja) * 1985-12-13 1987-06-23 Toshiba Corp 半導体メモリ
JPH027288A (ja) * 1988-01-22 1990-01-11 Texas Instr Inc <Ti> データ・ラッチ回路
JPH0210593A (ja) * 1988-02-26 1990-01-16 Internatl Business Mach Corp <Ibm> メモリ用センス・アンプ及びデータ読出し方法
JPH0294096A (ja) * 1988-09-29 1990-04-04 Mitsubishi Electric Corp 半導体記憶回路
US5587952A (en) * 1984-12-17 1996-12-24 Hitachi, Ltd. Dynamic random access memory including read preamplifiers activated before rewrite amplifiers
WO2009157489A1 (ja) * 2008-06-25 2009-12-30 日本電気株式会社 半導体記憶装置のセンスアンプ回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132489A (ja) * 1983-01-19 1984-07-30 Hitachi Ltd 半導体記憶装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132489A (ja) * 1983-01-19 1984-07-30 Hitachi Ltd 半導体記憶装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587952A (en) * 1984-12-17 1996-12-24 Hitachi, Ltd. Dynamic random access memory including read preamplifiers activated before rewrite amplifiers
JPS62140292A (ja) * 1985-12-13 1987-06-23 Toshiba Corp 半導体メモリ
JPH027288A (ja) * 1988-01-22 1990-01-11 Texas Instr Inc <Ti> データ・ラッチ回路
JPH0210593A (ja) * 1988-02-26 1990-01-16 Internatl Business Mach Corp <Ibm> メモリ用センス・アンプ及びデータ読出し方法
JPH0294096A (ja) * 1988-09-29 1990-04-04 Mitsubishi Electric Corp 半導体記憶回路
WO2009157489A1 (ja) * 2008-06-25 2009-12-30 日本電気株式会社 半導体記憶装置のセンスアンプ回路

Also Published As

Publication number Publication date
JPH0513360B2 (enrdf_load_stackoverflow) 1993-02-22

Similar Documents

Publication Publication Date Title
US4697112A (en) Current-mirror type sense amplifier
US5525919A (en) Sense amplifier with limited output voltage swing
US5192878A (en) High-speed differential amplifier
JPH0666115B2 (ja) 半導体記憶装置
JPH0750556A (ja) フリップフロップ型増幅回路
KR900008917B1 (ko) 반도체 메모리 소자의 데이타 판독회로
JPH06150653A (ja) レベルシフト増幅回路
JPS60170091A (ja) センス回路
US4658160A (en) Common gate MOS differential sense amplifier
JP3805802B2 (ja) 半導体メモリ装置のデータ出力回路
US4606012A (en) Sense amplifier
JPH04115622A (ja) カレントミラー型増幅回路及びその駆動方法
JP2680939B2 (ja) 半導体記憶装置
JPH023190A (ja) Ｃｍｏｓ技術におけるｅｐｒｏｍメモリーセルのビットライン用バイアス及びプリチャージ回路
US5226013A (en) Bias and precharging circuit for use in reading EPROM cells
JPH05242682A (ja) 差動増幅回路
JPH0518200B2 (enrdf_load_stackoverflow)
JP2514988B2 (ja) センスアンプ回路
KR0178883B1 (ko) 반도체집적회로
KR960013400B1 (ko) 반도체 기억소자의 감지 증폭기
JPH03100996A (ja) 増幅回路
KR0153615B1 (ko) 등화동작이 개선된 센스앰프회로
JPH023179A (ja) メモリ装置
JPH0352195A (ja) センス回路
JPS5850697A (ja) メモリ読出増幅器駆動信号発生回路

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term