JPS60167379A - 半導体不揮発性記憶装置の製造方法 - Google Patents

半導体不揮発性記憶装置の製造方法

Info

Publication number
JPS60167379A
JPS60167379A JP59272907A JP27290784A JPS60167379A JP S60167379 A JPS60167379 A JP S60167379A JP 59272907 A JP59272907 A JP 59272907A JP 27290784 A JP27290784 A JP 27290784A JP S60167379 A JPS60167379 A JP S60167379A
Authority
JP
Japan
Prior art keywords
insulating film
film
oxidation
memory device
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59272907A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6333305B2 (enrdf_load_stackoverflow
Inventor
Yoshiaki Kamigaki
良昭 神垣
Katsutada Horiuchi
勝忠 堀内
Takaaki Hagiwara
萩原　隆旦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59272907A priority Critical patent/JPS60167379A/ja
Publication of JPS60167379A publication Critical patent/JPS60167379A/ja
Publication of JPS6333305B2 publication Critical patent/JPS6333305B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Non-Volatile Memory (AREA)
JP59272907A 1984-12-26 1984-12-26 半導体不揮発性記憶装置の製造方法 Granted JPS60167379A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59272907A JPS60167379A (ja) 1984-12-26 1984-12-26 半導体不揮発性記憶装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59272907A JPS60167379A (ja) 1984-12-26 1984-12-26 半導体不揮発性記憶装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP7573205A Division JPS5910074B2 (ja) 1975-06-18 1975-06-18 半導体不揮発性記憶装置

Publications (2)

Publication Number Publication Date
JPS60167379A true JPS60167379A (ja) 1985-08-30
JPS6333305B2 JPS6333305B2 (enrdf_load_stackoverflow) 1988-07-05

Family

ID=17520416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59272907A Granted JPS60167379A (ja) 1984-12-26 1984-12-26 半導体不揮発性記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60167379A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153144A (en) * 1988-05-10 1992-10-06 Hitachi, Ltd. Method of making tunnel EEPROM
US5445980A (en) * 1988-05-10 1995-08-29 Hitachi, Ltd. Method of making a semiconductor memory device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153144A (en) * 1988-05-10 1992-10-06 Hitachi, Ltd. Method of making tunnel EEPROM
US5445980A (en) * 1988-05-10 1995-08-29 Hitachi, Ltd. Method of making a semiconductor memory device
USRE37959E1 (en) 1988-05-10 2003-01-07 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6333305B2 (enrdf_load_stackoverflow) 1988-07-05

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