JPS60159847A - ポジテイブ写真食刻レジスト組成 - Google Patents

ポジテイブ写真食刻レジスト組成

Info

Publication number
JPS60159847A
JPS60159847A JP59171671A JP17167184A JPS60159847A JP S60159847 A JPS60159847 A JP S60159847A JP 59171671 A JP59171671 A JP 59171671A JP 17167184 A JP17167184 A JP 17167184A JP S60159847 A JPS60159847 A JP S60159847A
Authority
JP
Japan
Prior art keywords
resin
solubility
resist
lot
pac
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59171671A
Other languages
English (en)
Japanese (ja)
Other versions
JPH032294B2 (enExample
Inventor
スタンレー・ユージン・ペリユールト
ロバート・ラビン・ウツド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS60159847A publication Critical patent/JPS60159847A/ja
Publication of JPH032294B2 publication Critical patent/JPH032294B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
JP59171671A 1984-01-30 1984-08-20 ポジテイブ写真食刻レジスト組成 Granted JPS60159847A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US560781 1984-01-30
US06/560,781 US4564575A (en) 1984-01-30 1984-01-30 Tailoring of novolak and diazoquinone positive resists by acylation of novolak

Publications (2)

Publication Number Publication Date
JPS60159847A true JPS60159847A (ja) 1985-08-21
JPH032294B2 JPH032294B2 (enExample) 1991-01-14

Family

ID=24239347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59171671A Granted JPS60159847A (ja) 1984-01-30 1984-08-20 ポジテイブ写真食刻レジスト組成

Country Status (3)

Country Link
US (1) US4564575A (enExample)
EP (1) EP0150315A3 (enExample)
JP (1) JPS60159847A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147452A (ja) * 1985-12-17 1987-07-01 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション フオトレジスト組成物
WO2007026475A1 (ja) * 2005-08-30 2007-03-08 Hitachi Chemical Company, Ltd. 感光性樹脂組成物及び感光性エレメント
WO2017098880A1 (ja) * 2015-12-07 2017-06-15 Dic株式会社 ノボラック型樹脂及びレジスト膜

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260611A (ja) * 1984-06-08 1985-12-23 Mitsubishi Petrochem Co Ltd 高分子量クレゾ−ルノボラツク樹脂の製造方法
DE3421448A1 (de) * 1984-06-08 1985-12-12 Hoechst Ag, 6230 Frankfurt Perfluoralkylgruppen aufweisende polymere, sie enthaltende reproduktionsschichten und deren verwendung fuer den wasserlosen offsetdruck
GB8505402D0 (en) * 1985-03-02 1985-04-03 Ciba Geigy Ag Modified phenolic resins
US5264319A (en) * 1985-05-10 1993-11-23 Hitachi, Ltd. Photosensitive resin composition having high resistance to oxygen plasma, containing alkali-soluble organosilicon polymer and photosensitive dissolution inhibitor
CA1279430C (en) * 1985-12-06 1991-01-22 Takashi Kubota High-molecular-weight soluble novolak resin and process for preparation thereof
DE3760030D1 (en) * 1986-02-07 1989-02-02 Nippon Telegraph & Telephone Photosensitive and high energy beam sensitive resin composition containing substituted polysiloxane
US4732836A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
US4902785A (en) * 1986-05-02 1990-02-20 Hoechst Celanese Corporation Phenolic photosensitizers containing quinone diazide and acidic halide substituents
US5035976A (en) * 1986-05-02 1991-07-30 Hoechst Celanese Corporation Photosensitive article having phenolic photosensitizers containing quinone diazide and acid halide substituents
US5162510A (en) * 1986-05-02 1992-11-10 Hoechst Celanese Corporation Process for the preparation of photosensitive compositions containing a mixed ester o-quinone photosensitizer
US4732837A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
JPS63305348A (ja) * 1987-06-05 1988-12-13 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
US4927956A (en) * 1987-09-16 1990-05-22 Hoechst Celanese Corporation 3,5-disubstituted-4-acetoxystyrene and process for its production
US5342727A (en) * 1988-10-21 1994-08-30 Hoechst Celanese Corp. Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition
US5023164A (en) * 1989-10-23 1991-06-11 International Business Machines Corporation Highly sensitive dry developable deep UV photoresist
US5208138A (en) * 1990-02-05 1993-05-04 Morton International, Inc. High contrast high thermal stability positive photoresists having novolak resins of lowered hydroxyl content
US5182184A (en) * 1990-02-05 1993-01-26 Morton International, Inc. Novolak resins of lowered hydroxyl content and high contrast high thermal stability positive photoresists prepared therefrom
US5541263A (en) * 1995-03-16 1996-07-30 Shipley Company, L.L.C. Polymer having inert blocking groups
US5514520A (en) * 1995-03-16 1996-05-07 Shipley Company, L.L.C. Radiation sensitive composition comprising polymer having inert blocking groups
US5700624A (en) * 1995-05-09 1997-12-23 Shipley Company, L.L.C. Positive acid catalyzed resists having an alkali soluble resin with acid labile groups and inert blocking groups
US5731386A (en) * 1995-05-09 1998-03-24 Shipley Company, L.L.C. Polymer for positive acid catalyzed resists
US5652081A (en) * 1995-09-20 1997-07-29 Fuji Photo Film Co., Ltd. Positive working photoresist composition
US5707782A (en) * 1996-03-01 1998-01-13 The Board Of Trustees Of The University Of Illinois Photoimageable, dielectric, crosslinkable copolyesters
KR19980087477A (ko) * 1997-05-30 1998-12-05 마틴즈 길레모 방사선 민감성 중합체 조성물
US5985507A (en) * 1998-02-18 1999-11-16 Olin Microelectronic Chemicals, Inc. Selected high thermal novolaks and positive-working radiation-sensitive compositions
EP2336827B1 (en) * 2009-12-15 2015-09-16 Rohm and Haas Electronic Materials LLC Method for providing an ion-implanted semiconductor substrate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL230099A (enExample) * 1957-08-01
US3802885A (en) * 1967-08-15 1974-04-09 Algraphy Ltd Photosensitive lithographic naphthoquinone diazide printing plate with aluminum base
JPS5421089B2 (enExample) * 1973-05-29 1979-07-27
DE2629996A1 (de) * 1976-07-03 1978-01-05 Ibm Deutschland Verfahren zur passivierung und planarisierung eines metallisierungsmusters
DE2718254C3 (de) * 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse
DE2829511A1 (de) * 1978-07-05 1980-01-24 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
DE3009873A1 (de) * 1979-03-16 1980-09-25 Daicel Chem Photoempfindliche masse
DE2928636A1 (de) * 1979-07-16 1981-02-12 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
JPS57120931A (en) * 1981-01-20 1982-07-28 Japan Synthetic Rubber Co Ltd Positive type photosensitive resin composition

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147452A (ja) * 1985-12-17 1987-07-01 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション フオトレジスト組成物
WO2007026475A1 (ja) * 2005-08-30 2007-03-08 Hitachi Chemical Company, Ltd. 感光性樹脂組成物及び感光性エレメント
JPWO2007026475A1 (ja) * 2005-08-30 2009-03-05 日立化成工業株式会社 感光性樹脂組成物及び感光性エレメント
KR100937264B1 (ko) 2005-08-30 2010-01-18 히다치 가세고교 가부시끼가이샤 감광성 수지 조성물 및 감광성 엘리먼트
JP4600477B2 (ja) * 2005-08-30 2010-12-15 日立化成工業株式会社 感光性樹脂組成物及び感光性エレメント
US8034529B2 (en) 2005-08-30 2011-10-11 Hitachi Chemical Company, Ltd. Photosensitive resin composition and photosensitive element
WO2017098880A1 (ja) * 2015-12-07 2017-06-15 Dic株式会社 ノボラック型樹脂及びレジスト膜
JPWO2017098880A1 (ja) * 2015-12-07 2017-12-07 Dic株式会社 ノボラック型樹脂及びレジスト膜
KR20180090789A (ko) * 2015-12-07 2018-08-13 디아이씨 가부시끼가이샤 노볼락형 수지 및 레지스트막

Also Published As

Publication number Publication date
US4564575A (en) 1986-01-14
EP0150315A3 (en) 1987-04-29
JPH032294B2 (enExample) 1991-01-14
EP0150315A2 (en) 1985-08-07

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