JPS6012750A - Mounting device for semiconductor element - Google Patents

Mounting device for semiconductor element

Info

Publication number
JPS6012750A
JPS6012750A JP12062383A JP12062383A JPS6012750A JP S6012750 A JPS6012750 A JP S6012750A JP 12062383 A JP12062383 A JP 12062383A JP 12062383 A JP12062383 A JP 12062383A JP S6012750 A JPS6012750 A JP S6012750A
Authority
JP
Japan
Prior art keywords
monolithic
semiconductor element
substrate
circuit
transparent resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12062383A
Other languages
Japanese (ja)
Inventor
Hitaka Tsukasaki
塚崎　日高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP12062383A priority Critical patent/JPS6012750A/en
Publication of JPS6012750A publication Critical patent/JPS6012750A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

Abstract

PURPOSE:To reduce the space for installation on automobiles, etc. by the increase of the mounting density by a method wherein the first monolithic IC is fixed on a circuit substrate made of ceramic, the second monlithic IC which is the photo diode is stacked thereon by means of adhesive, and the part above it is filled with photo receiving transparent resin while being surrounded with an enclosure. CONSTITUTION:The first monolithic IC element 2 is bonded by phase-down on the ceramic substrate 1 which is the circuit substrate, and the second monolithic IC element 3 the photo diode for photo detection is stacked thereon by means of the adhesive. Next, terminal mounting parts 6 provided thereto are connected to the circuit of the substrate 1, and the entire surface including those is filled with the transparent resin 5 while being surrounded with the enclosure 4. The mounting densities of two IC's are markedly increased in such a manner, resulting in the reduction of the space for installing a light control sensor.

Description

【発明の詳細な説明】 本考案は、光の照度を検出して自動車のテールライト、
ヘッドライトの点消灯を自動的に行うライトコントロー
ルセンサに適用するのに適した半導体素子の実装装置に
関するものである。[Detailed Description of the Invention] The present invention detects the illuminance of light and
The present invention relates to a semiconductor element mounting apparatus suitable for application to a light control sensor that automatically turns on and off headlights.

従来ライトコントロールセンサはホトダイオードや増幅
用ＩＣからなるが、これらを回路基板につけるときそれ
ぞれ、基板にグイボンデングし′ζいたが、実装スペー
スをとるため小型化に限界があった。Conventional light control sensors consist of photodiodes and amplification ICs, but when these are attached to a circuit board, they are each bonded to the board, but this takes up mounting space, which limits miniaturization.

本発明はさらに実装密度をあげることにより、小型化を
狙ったものである。The present invention aims at miniaturization by further increasing the packaging density.

以下に第１図〜第３図に示す本発明実施例について説明
する。第１図は本発明によってハイブリッドＩＣとなっ
た実装装置の断面図である。１は回路基板をなすセラミ
ック基板、２は第３図に回路図が示しである第１のモノ
リシックＩＣ，２は図示上部からの光を検出するための
ホトダイオード（第２のノモリシックＩＣ）、４は受光
用の透明樹脂５の流出を防止する囲い、６はホトダイオ
ード３とセラミック基板１の回路ばたーんとを接続する
ためのターミナルである。なお、第２−２図は第１図の
平面即、第３図は第１図の実施回路例を示している。Embodiments of the present invention shown in FIGS. 1 to 3 will be described below. FIG. 1 is a cross-sectional view of a mounting device that has become a hybrid IC according to the present invention. 1 is a ceramic substrate forming a circuit board; 2 is a first monolithic IC whose circuit diagram is shown in FIG. 3; 2 is a photodiode (second nomolithic IC) for detecting light from the upper part of the figure; An enclosure 6 for preventing the light receiving transparent resin 5 from flowing out is a terminal for connecting the photodiode 3 and the circuit board of the ceramic substrate 1. 2-2 shows a plan view of FIG. 1, and FIG. 3 shows an example of the circuit shown in FIG. 1.

以下その作動について説明する。セラミック基板ｌ上の
ＩＣ２によって構成される回路２は、ホトダイオード３
の出力を第３図の増幅器７で増幅し、比較器８で照度設
定電圧と比較して出力を出すものである。The operation will be explained below. A circuit 2 constituted by an IC 2 on a ceramic substrate 1 includes a photodiode 3
The output is amplified by the amplifier 7 shown in FIG. 3, and compared with the illuminance setting voltage by the comparator 8 to produce an output.

本装置において、ホトダイオード３はモノリシックＩＣ
２上に接着材等を用いて固定され、かつホトダイオード
３は、その端子数山部からターミナル６を介してセラミ
ック回路基板１に接続される。なお、モノリシックＩＣ
２は、セラミック回路基板１上に、フェイスダウンボン
ディングされている。In this device, the photodiode 3 is a monolithic IC.
The photodiode 3 is fixed onto the ceramic circuit board 2 using an adhesive or the like, and the photodiode 3 is connected to the ceramic circuit board 1 via the terminal 6 from its terminal ridges. In addition, monolithic IC
2 is face-down bonded onto the ceramic circuit board 1.

このため、２つの実装密度が格段に向上し、ライトコン
トロールセンサとしての取付スペースが著しく小さくな
る。Therefore, the mounting density of the two is significantly improved, and the installation space for the light control sensor is significantly reduced.

なお、前記構成において基板ｌはセラミック基板以外に
回路素子を実装できるものであればよく、ＩＣ３は受光
素子に限るものではない。Note that in the above configuration, the substrate l may be any substrate other than a ceramic substrate as long as it can mount a circuit element, and the IC 3 is not limited to a light receiving element.

また、ＩＣ２フエクスダウンボンデイングせずに、ＩＣ
３よりも大きいチップザイスにして、はみ出た部分にラ
ンドを設け”Ｃワイヤボンド接続し°ζもよい。Also, without IC2 fex down bonding, IC
It is also good to make a chip size larger than 3, provide a land on the protruding part, and connect with a "C" wire bond.

以上のように本発明は、第１．第２のＩＣＣ壬子積み重
ね載置したことにより、小型化が図られるとともに、上
部に受光素子が位置するようにすればライトコンＩ・ロ
ールセンサとし゛ζ自動車への取付スペースがきわめて
コンパクトとなる。As described above, the present invention has the following advantages: By stacking the second ICC, it is possible to reduce the size, and by positioning the light-receiving element at the top, the installation space for the light control I/roll sensor in the vehicle becomes extremely compact.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の実施例を示す断面図、第２図はその平
面図、第３図はその回路実施例図である。 ■・・・回路基板、２・・・第１のＩＣをなすモノリミ
ックＩＣ，３・・・ｍ２のＩＣをなずホトダイオード。 ５・・・透明樹脂。 代理人弁理士　岡　部　隆FIG. 1 is a sectional view showing an embodiment of the present invention, FIG. 2 is a plan view thereof, and FIG. 3 is a diagram showing an embodiment of the circuit. ■...Circuit board, 2...Monolithic IC forming the first IC, 3...M2 IC is a photodiode. 5...Transparent resin. Representative Patent Attorney Takashi Okabe

Claims (1)

【特許請求の範囲】 （１１回路基板上に載置された第１のＩＣと、第１のＩ
Ｃ上に載置された第２のＩＣと、第１、第２のＩＣと回
路基板とを電気的に接続する手段とを備えてなる半導体
素子の実装装置。 （２）第２のＩＣと第１のＩｃとが接着固定されている
特許請求の範囲第１項記載の半導体素子の実装装置。 （３）第２のＩＣが受光素子である特許請求の範囲第１
項または第２項記載の半導体素子の実装装置。 （４）第１、第２のＩＣが回路基板上で透明樹脂により
モールドされている特許請求の範囲第３項記載の半導体
素子の実装装置。 （５１第１．第２のＩＣがモノリミックＩＣである特許
請求の範囲第１項乃至第４項いずれかに記載の半導体素
子の実装装置。[Claims] (11 A first IC mounted on a circuit board and a first I
1. A semiconductor element mounting apparatus comprising: a second IC placed on a semiconductor chip; and means for electrically connecting the first and second ICs to a circuit board. (2) The semiconductor element mounting apparatus according to claim 1, wherein the second IC and the first IC are adhesively fixed. (3) Claim 1 in which the second IC is a light receiving element
2. A semiconductor device mounting apparatus according to item 1 or 2. (4) The semiconductor element mounting apparatus according to claim 3, wherein the first and second ICs are molded with transparent resin on a circuit board. (51.1. The semiconductor element mounting apparatus according to any one of claims 1 to 4, wherein the second IC is a monolithic IC.
JP12062383A 1983-07-01 1983-07-01 Mounting device for semiconductor element Pending JPS6012750A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12062383A JPS6012750A (en) 1983-07-01 1983-07-01 Mounting device for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12062383A JPS6012750A (en) 1983-07-01 1983-07-01 Mounting device for semiconductor element

Publications (1)

Publication Number Publication Date
JPS6012750A true JPS6012750A (en) 1985-01-23

Family

ID=14790807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12062383A Pending JPS6012750A (en) 1983-07-01 1983-07-01 Mounting device for semiconductor element

Country Status (1)

Country Link
JP (1) JPS6012750A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296207A (en) * 1990-08-31 1994-03-22 Benno Lux Composite element, process for its preparation and its use
US5503016A (en) * 1994-02-01 1996-04-02 Ic Sensors, Inc. Vertically mounted accelerometer chip
WO1996017505A1 (en) * 1994-12-01 1996-06-06 Motorola Inc. Method, flip-chip module, and communicator for providing three-dimensional package
GB2374726A (en) * 2001-04-20 2002-10-23 Kingpak Tech Inc Stacked structure of an image sensor having image sensing chip located above integrated circuit
WO2011034054A1 (en) * 2009-09-18 2011-03-24 株式会社ケーヒン Electronic control device for vehicle

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296207A (en) * 1990-08-31 1994-03-22 Benno Lux Composite element, process for its preparation and its use
US5503016A (en) * 1994-02-01 1996-04-02 Ic Sensors, Inc. Vertically mounted accelerometer chip
WO1996017505A1 (en) * 1994-12-01 1996-06-06 Motorola Inc. Method, flip-chip module, and communicator for providing three-dimensional package
GB2374726A (en) * 2001-04-20 2002-10-23 Kingpak Tech Inc Stacked structure of an image sensor having image sensing chip located above integrated circuit
WO2011034054A1 (en) * 2009-09-18 2011-03-24 株式会社ケーヒン Electronic control device for vehicle
JP2011064156A (en) * 2009-09-18 2011-03-31 Keihin Corp Electronic control device for vehicle
EP2479410A4 (en) * 2009-09-18 2017-12-27 Keihin Corporation Electronic control device for vehicle

Similar Documents

Publication Publication Date Title
US6882020B2 (en) Camera module
JPH0875580A (en) Semiconductor pressure sensor
JPH06204442A (en) Slid-state image sensing apparatus and manufacture thereof
JPS6012750A (en) Mounting device for semiconductor element
JPS61281559A (en) Photodetector
CN219144186U (en) Patch type packaging structure suitable for infrared detector
US20040140420A1 (en) Image sensor having increased number of pixels
JPS5947774A (en) Photo semiconductor device
JPS61214565A (en) Semiconductor optical sensor device
JPH0227746U (en)
JPS60212075A (en) Image pickup element assembly
JPS61222358A (en) Semiconductor device
JPS58124965U (en) Multi-element photoelectric conversion device
JPS611061A (en) Manufacture of photodetector containing filter
JP2003060180A (en) Semiconductor device
JPS61222359A (en) Semiconductor device
JPH04206778A (en) Semiconductor acceleration detector
JP2603295Y2 (en) Contact image sensor
JPS6236112Y2 (en)
JPS6041735Y2 (en) semiconductor optical sensor
TWI249210B (en) Chip package structure
JPS62180738U (en)
JPH01276759A (en) Image sensor
JPH0325730B2 (en)
JPH03229451A (en) Semiconductor integrated circuit device