JPS5947774A - Photo semiconductor device - Google Patents
Photo semiconductor deviceInfo
- Publication number
- JPS5947774A JPS5947774A JP57157859A JP15785982A JPS5947774A JP S5947774 A JPS5947774 A JP S5947774A JP 57157859 A JP57157859 A JP 57157859A JP 15785982 A JP15785982 A JP 15785982A JP S5947774 A JPS5947774 A JP S5947774A
- Authority
- JP
- Japan
- Prior art keywords
- element substrate
- semiconductor element
- circuit
- solder
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000003287 optical effect Effects 0.000 claims abstract description 21
- 239000004020 conductor Substances 0.000 claims abstract description 4
- 238000009429 electrical wiring Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract description 8
- 229910000679 solder Inorganic materials 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 3
- 230000004927 fusion Effects 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 239000011347 resin Substances 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
- G02B6/4232—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using the surface tension of fluid solder to align the elements, e.g. solder bump techniques
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は入力光を電気信号に変換して外部出力回路へ供
給する光半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical semiconductor device that converts input light into an electrical signal and supplies the electrical signal to an external output circuit.
この種の光半導体装置は一般に光学レンズを経【透明な
絶縁板を通して集積回路素子基板等の半導体素子基板の
光感知部に光信号を受け、電気信号に変換して外部電子
回路へ出力信号として供給するものである。This type of optical semiconductor device generally receives an optical signal through an optical lens (through a transparent insulating plate) to the photodetector of a semiconductor element substrate such as an integrated circuit element substrate, converts it into an electrical signal, and outputs the signal to an external electronic circuit. supply.
この場合、光学レンズを通して入射される入力光信号と
半導体素子の光感知部とが光学的に正確な位置で対向し
ていることが必要であり、更に光学レンズが複数有り、
それらからの入力光信号の差分な半導体素子基板にて演
算することが必要な場合は、入射角のずれ、即ち光軸に
対する半導体素子基板の傾き、も問題になるが、いずれ
も従来の光半導体装置では解決することが困難であった
３゜即ち従来２′Ｂ２図圧示ずよう１・τセラミ、クケ
ース１６の内底面に半導体素子基板１４を半田１８等の
ダイボンディングにより固着して、Ａｕ線等のボンデ−
ｒフグワイヤ１５によりセラミックケース１６の印刷回
路１３上の必要個所に接続することが一般的であるが、
特に半導体素子基板１４をダイボンデ・ｒングする際に
は、セラミックケース１６の内底面の平坦度がよくない
ことによるグイボンデーイング時の半田層１８の厚みと
位階精度のバラツキ等により、半導体素子基板１４の光
感知部の相対位置精度及びそれへの入射角精度を出すこ
とが困難である。また更にセラミックケース１６は内底
面に前述のよう忙半導体素子基板１４を半田付けし、中
段部には高温焼付けを必要とする印刷回路１３を設ける
必要があるため、材料も耐熱性の点よりセラミ、りに制
限される。しかもこのセラミックケース１６は第２図の
ように形状が複雑であるだけでなく、前述のような理由
から底面の平坦度につい゛〔木精度もきわめて厳しく要
求され、多大の加工を必要とするため非常に高価であっ
た。なお、透明ガラス、板１１は接着拐１７にてセラミ
ックケース１６と接着され、外部出力端子１２はセラミ
ックケース１６内の印刷回路１３からの出力信号を外部
電子回路へ供給する電極端子である。In this case, it is necessary that the input optical signal incident through the optical lens and the photodetecting part of the semiconductor element face each other at an optically accurate position, and furthermore, there are multiple optical lenses,
If it is necessary to calculate the difference between the input optical signals from the semiconductor element substrate, the deviation of the incident angle, that is, the inclination of the semiconductor element substrate with respect to the optical axis, becomes a problem. The semiconductor element substrate 14 is fixed to the inner bottom surface of the case 16 by die bonding such as solder 18, and the Au bonding wire etc.
Generally, it is connected to necessary points on the printed circuit 13 of the ceramic case 16 using the r puffer wire 15.
In particular, when die-bonding the semiconductor element substrate 14, the semiconductor element may It is difficult to obtain the relative position accuracy of the light sensing portion of the substrate 14 and the incidence angle accuracy thereon. Furthermore, the ceramic case 16 has the semiconductor element board 14 soldered to its inner bottom as described above, and the printed circuit 13 that requires high-temperature baking is required to be installed in the middle part. , limited to Moreover, this ceramic case 16 not only has a complicated shape as shown in Fig. 2, but also has very strict requirements for the flatness of the bottom surface due to the reasons mentioned above. It was very expensive. The transparent glass plate 11 is bonded to the ceramic case 16 with an adhesive 17, and the external output terminal 12 is an electrode terminal for supplying an output signal from the printed circuit 13 inside the ceramic case 16 to an external electronic circuit.
本発明の目的は上述の欠点を除去して、装置の構造を小
型にし、組立を容易にし、かつ安価なものにする光半導
体装置を提供することである。SUMMARY OF THE INVENTION It is an object of the present invention to provide an optical semiconductor device which eliminates the above-mentioned drawbacks and which makes the structure of the device compact, easy to assemble and inexpensive.
本発明によれば半導体素子基板と透明な絶縁板の電気配
線回路とが半導体素子基板の回路上に設けられた突起秋
の金属導体を介して電気的に接続されることにより達成
される。According to the present invention, the semiconductor element substrate and the electrical wiring circuit of the transparent insulating plate are electrically connected through the metal conductor of the protrusion provided on the circuit of the semiconductor element substrate.
以下第１図により本発明の一実施例を説明する。An embodiment of the present invention will be described below with reference to FIG.
半導体素子基板５はこの半導体素子基板十の回路に設け
られた半田又はＡｕ等からなるバンブ６によりガラスの
ようブエ透明絶縁板２に印刷された導電性の印刷回路４
に、光学系ユニ、トｌＯの受光レンズ９を通る入力光１
に対し光学的に正確に対向するように取付けられる。こ
れは透明絶縁板２に対する半導体素子基板５の相対位％
ｔが、半ＦＪＪバンプ６による溶融接続の自己整合効果
により一定となるためであり、この結果光学系ユニット
１０の受光レンズ９の光軸な半導体素子基板５の光感知
部にほぼ一致させることは容易になる。次に透明絶縁板
２に半田バンプ６により電気的に接続された半導体素子
基板５を、絶縁物よりなるケース７に」、って密閉する
。更にクリップ端子３が外部電子回路への出力端子とし
て半田接合されることに」、り光半導体装置が作られる
。The semiconductor element substrate 5 is a conductive printed circuit 4 printed on a glass-like transparent insulating plate 2 using bumps 6 made of solder, Au, etc. provided on the circuit of the semiconductor element substrate 10.
Input light 1 passes through the light receiving lens 9 of the optical system unit 10.
It is mounted so that it is optically accurately opposed to the This is the relative position percentage of the semiconductor element substrate 5 with respect to the transparent insulating plate 2.
This is because t becomes constant due to the self-alignment effect of the fusion connection by the half-FJJ bump 6, and as a result, it is possible to almost match the optical axis of the light receiving lens 9 of the optical system unit 10 with the light sensing portion of the semiconductor element substrate 5. becomes easier. Next, the semiconductor element substrate 5 electrically connected to the transparent insulating plate 2 by solder bumps 6 is sealed in a case 7 made of an insulating material. Further, the clip terminal 3 is soldered and connected as an output terminal to an external electronic circuit, thereby producing an optical semiconductor device.
このように本発明によれば、半導体素子基板５を透明絶
縁板２の印刷回路４に半田バンブ６を介して取り付ける
ことにより、信頼性があまり高くないとされる、半導体
素子基板５と印刷回路４を接続するポンディングワイヤ
１５が不必要とｔ「ろ。As described above, according to the present invention, by attaching the semiconductor element substrate 5 to the printed circuit 4 of the transparent insulating plate 2 via the solder bumps 6, the semiconductor element substrate 5 and the printed circuit, which are not considered to have very high reliability, can be attached. 4 is unnecessary.
しかも入力光（８号の光軸と半導体素子の位置合せが容
易になる効果がえられる。更にケース７は本発明では単
なる１１体であればよく、前述のように半導体素子基板
を半ｆｌｌ付けしたり、印刷回路を設ける必要もないの
でセラミックで））る必要はなく樹脂等の適用も可能１
でなったのでｔ）る。従って従来の複雑な形状のセラミ
、クケースに比べ明らかに非常に安価でかつ小型に＋イ
）ことが′（・きる。Moreover, the effect of making it easier to align the optical axis of the input light (No. 8) and the semiconductor element can be obtained.Furthermore, in the present invention, the case 7 only needs to be a mere 11 pieces, and the semiconductor element substrate is attached half full as described above. There is no need to install a printed circuit, so there is no need to use ceramic, and resin, etc. can also be used.
Because it turned out to be t). Therefore, it is clearly much cheaper and smaller than conventional ceramics and cases with complicated shapes.
第１図は本発明による光半導体装置の一実施例を示す断
面図。
第２図は従来の光半導体装置の断面図である。
２・・透明絶縁板、４・・・印刷回路、５・・・半導体
素子基板、６・・・バンブ。
＋１（２）
テ２図FIG. 1 is a sectional view showing an embodiment of an optical semiconductor device according to the present invention. FIG. 2 is a sectional view of a conventional optical semiconductor device. 2...Transparent insulating plate, 4...Printed circuit, 5...Semiconductor element substrate, 6...Bump. +1 (2) Te 2 diagram
Claims (1)
気信号を外部出力回路へ出力信号どして供給するよ５に
、＃起生導体素子基板と電気的に接続された電気配線回
路を表面に設けた透明な絶縁板とを有する光半導体装置
尾おい゛〔、前記半導体素子基板の回路上に設けられた
突起状の金属導体を介して前記透明な絶縁板の電気配線
回路と前記半導体素子基板とが電気的に接続されている
ことを特徴とする光半導体装置。[Scope of Claims] A semiconductor element substrate that converts input light into an electrical signal, and 5) electrically connected to a #generating conductor element substrate for supplying the electrical signal to an external output circuit as an output signal. An optical semiconductor device having a transparent insulating plate with an electrical wiring circuit provided on its surface [The electricity of the transparent insulating plate is transmitted through the protruding metal conductor provided on the circuit of the semiconductor element substrate. An optical semiconductor device characterized in that a wiring circuit and the semiconductor element substrate are electrically connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57157859A JPS5947774A (en) | 1982-09-10 | 1982-09-10 | Photo semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57157859A JPS5947774A (en) | 1982-09-10 | 1982-09-10 | Photo semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5947774A true JPS5947774A (en) | 1984-03-17 |
Family
ID=15658937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57157859A Pending JPS5947774A (en) | 1982-09-10 | 1982-09-10 | Photo semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5947774A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3534186A1 (en) | 1984-09-26 | 1986-04-03 | Rca Corp., Princeton, N.J. | STRUCTURE FOR A SOLID IMAGE TRANSDUCER |
| FR2626408A1 (en) * | 1988-01-22 | 1989-07-28 | Thomson Csf | IMAGE SENSOR WITH LOW DIMENSIONS |
| JPH021179A (en) * | 1988-02-09 | 1990-01-05 | Canon Inc | Manufacture of photoelectric conversion device |
| JPH05195532A (en) * | 1992-11-09 | 1993-08-03 | Ohbayashi Corp | Setting of steel pile |
| WO2000007247A1 (en) * | 1998-07-30 | 2000-02-10 | Bookham Technology Plc | Lead frame attachment for optoelectronic device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922857B1 (en) * | 1970-12-25 | 1974-06-12 |
-
1982
- 1982-09-10 JP JP57157859A patent/JPS5947774A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922857B1 (en) * | 1970-12-25 | 1974-06-12 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3534186A1 (en) | 1984-09-26 | 1986-04-03 | Rca Corp., Princeton, N.J. | STRUCTURE FOR A SOLID IMAGE TRANSDUCER |
| FR2626408A1 (en) * | 1988-01-22 | 1989-07-28 | Thomson Csf | IMAGE SENSOR WITH LOW DIMENSIONS |
| US5051802A (en) * | 1988-01-22 | 1991-09-24 | Thomson-Csf | Compact image sensor |
| JPH021179A (en) * | 1988-02-09 | 1990-01-05 | Canon Inc | Manufacture of photoelectric conversion device |
| JPH05195532A (en) * | 1992-11-09 | 1993-08-03 | Ohbayashi Corp | Setting of steel pile |
| WO2000007247A1 (en) * | 1998-07-30 | 2000-02-10 | Bookham Technology Plc | Lead frame attachment for optoelectronic device |
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