JPH04235475A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPH04235475A JPH04235475A JP3012394A JP1239491A JPH04235475A JP H04235475 A JPH04235475 A JP H04235475A JP 3012394 A JP3012394 A JP 3012394A JP 1239491 A JP1239491 A JP 1239491A JP H04235475 A JPH04235475 A JP H04235475A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state image
- image sensor
- transparent substrate
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 37
- 238000003384 imaging method Methods 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 108091008695 photoreceptors Proteins 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、電子内視鏡の先端部
等の微小部分に配置される超小型の固体撮像装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultra-small solid-state imaging device placed in a minute part such as the tip of an electronic endoscope.
【０００２】0002
【従来の技術】従来、電子内視鏡の先端部等の微小部分
に配置される固体撮像装置としては、種々の構成のもの
が提案されている。例えば特開昭６３−３０３５８０号
には、図６に示すように、固体撮像素子１０１ をセラ
ミックパッケージ１０２ にダイボンドで接着し、ボン
ディングワイヤ１０３ で外部リード端子１０４ と接
続し、固体撮像素子１０１ 上にプリズム１０５ を接
着して、その周辺部を遮光樹脂１０６ で封止する。そ
して別個の基板１０７ に周辺回路構成用のＩＣ１０８
や電気部品１０９ 等を実装し、この基板１０７ と
前記セラミックパッケージ１０２の外部リード端子１０
４ とをハンダ１１０ で固着して取り付けた構成のも
のが開示されている。なお図６において、１１１ は基
板１０７にハンダ付けされた外部接続用リード線である
。2. Description of the Related Art Conventionally, solid-state imaging devices of various configurations have been proposed to be placed in minute parts such as the tip of an electronic endoscope. For example, in Japanese Patent Application Laid-Open No. 63-303580, as shown in FIG. 6, a solid-state image sensor 101 is bonded to a ceramic package 102 by die bonding, connected to an external lead terminal 104 with a bonding wire 103, and placed on the solid-state image sensor 101. The prism 105 is bonded and its periphery is sealed with a light-shielding resin 106. And a separate board 107 has an IC 108 for peripheral circuit configuration.
This board 107 and the external lead terminals 10 of the ceramic package 102 are mounted with electrical components 109 and the like.
4 and are fixed and attached with solder 110 is disclosed. In FIG. 6, 111 is a lead wire for external connection soldered to the board 107.
【０００３】また特開昭６３−１２４４９５号には、図
７に示すように、一枚のセラミック基板１２１ 上に、
固体撮像素子１０１ をダイボンドで接着し、ボンディ
ングワイヤ１０３ で基板１２１ 上の電極部と接続し
、固体撮像素子１０１ 上にプリズム１０５ を接着す
る。また基板１２１ 上にチップ型トランジスタ１２２
や電気部品１０９ を実装し、プリズム１０５ の光
入射面及び反射面を除いて遮光樹脂１０６ で封止した
構成のものが開示されている。Furthermore, in Japanese Patent Application Laid-open No. 124495/1983, as shown in FIG. 7, on a single ceramic substrate 121,
The solid-state image sensor 101 is bonded by die bonding, connected to the electrode portion on the substrate 121 with a bonding wire 103, and the prism 105 is bonded onto the solid-state image sensor 101. Also, a chip type transistor 122 is disposed on the substrate 121.
A configuration is disclosed in which a prism 105 and an electric component 109 are mounted, and the prism 105 is sealed with light-shielding resin 106 except for the light incident surface and reflective surface.
【０００４】0004
【発明が解決しようとする課題】ところが、従来の特開
昭６３−３０３５８０号に開示されている固体撮像装置
は、固体撮像素子と、周辺ＩＣ及び電気部品を、それぞ
れセラミックパッケージとセラミック基板に別々に実装
し、ハンダ付けにより接続して構成しているため、ハン
ダ付けのためのスペースを必要とし、しかもスペースが
狭いのでハンダ付け作業が困難であり、したがって小型
化には不向きな構成であり、コスト高や生産性の悪さ等
を招くという問題点があった。[Problems to be Solved by the Invention] However, in the conventional solid-state imaging device disclosed in JP-A-63-303580, the solid-state imaging device, peripheral ICs, and electrical components are separated into a ceramic package and a ceramic substrate, respectively. Since it is configured by mounting it on the board and connecting it by soldering, it requires a space for soldering, and the space is narrow, making it difficult to solder. Therefore, it is a configuration that is not suitable for miniaturization. There were problems in that it led to high costs and poor productivity.
【０００５】また特開昭６３−１２４４９５号に開示さ
れているものは、一枚の基板上に一体的に実装されてい
て、ハンダ付けによる接続は不要となるが、基板の片面
に実装されているため、実装面積が大きく、やはり小型
化には不向きであるという問題点がある。Furthermore, the device disclosed in Japanese Patent Application Laid-open No. 63-124495 is integrally mounted on one board, eliminating the need for soldering connections; however, it is mounted on one side of the board. Therefore, there is a problem that the mounting area is large and it is not suitable for miniaturization.
【０００６】本発明は、従来の固体撮像装置における上
記問題点を解消するために成されたもので、超小型化を
計ることの可能な固体撮像装置を提供することを目的と
する。The present invention has been made to solve the above-mentioned problems in conventional solid-state imaging devices, and an object of the present invention is to provide a solid-state imaging device that can be miniaturized.
【０００７】[0007]
【課題を解決するための手段及び作用】上記問題点を解
決するため、本発明は、配線パターンを形成した透明な
基板と、該透明基板上に配置され配線パターンに突起電
極を介して接続された固体撮像素子と、該固体撮像素子
の受光部に対応した前記基板の反対側の面に接着された
光学部品と、前記基板の両面に配置され、配線パターン
を介して前記固体撮像素子と接続された周辺回路構成用
の半導体素子及び電気部品とからなり、少なくとも前記
固体撮像素子を遮光性樹脂で封止して固体撮像装置を構
成するものである。[Means and Effects for Solving the Problems] In order to solve the above-mentioned problems, the present invention provides a transparent substrate on which a wiring pattern is formed, and a transparent substrate arranged on the transparent substrate and connected to the wiring pattern via a protruding electrode. a solid-state image sensor; an optical component bonded to the opposite surface of the substrate corresponding to a light receiving portion of the solid-state image sensor; and an optical component disposed on both surfaces of the substrate and connected to the solid-state image sensor via a wiring pattern. The solid-state imaging device is composed of semiconductor elements and electrical parts for configuring peripheral circuits, and at least the solid-state imaging device is sealed with a light-shielding resin.
【０００８】このように、透明基板を用いて、その両側
に固体撮像素子，光学部品等の構成部品を実装するよう
に構成したので、実装面積が小さく、しかもハンダ付け
による接続部分がなく、超小型化した固体撮像装置を容
易に実現することができる。[0008] In this way, since a transparent substrate is used and components such as a solid-state image pickup device and optical parts are mounted on both sides, the mounting area is small, and there are no soldering connections, making it extremely easy to use. A compact solid-state imaging device can be easily realized.
【０００９】[0009]
【実施例】次に実施例について説明する。図１は本発明
に係る固体撮像装置の第１の実施例を示す概略断面図で
ある。１は光学的な透明な部材、例えばガラス，石英等
を用いて形成した基板で、該基板１には例えば銅，ニッ
ケル，金，錫，ハンダなどで配線パターンが形成されて
おり、該透明基板１には固体撮像素子２を金，ハンダな
どの突起電極３を介して接続されている。そして透明基
板１と固体撮像素子２の間を光学的に透明な樹脂４で封
止し、更にその周辺部を遮光樹脂５で封止する。次に固
体撮像素子２の受光部に合わせて、透明基板１の反対側
に、プリズム，ミラー等の光路を曲げることの可能な光
学部品６を、紫外線硬化型，可視光硬化型，熱硬化型の
いずれか、又は組み合わせた透明接着剤７により接着す
る。[Example] Next, an example will be explained. FIG. 1 is a schematic cross-sectional view showing a first embodiment of a solid-state imaging device according to the present invention. Reference numeral 1 denotes a substrate formed using an optically transparent material such as glass, quartz, etc. A wiring pattern is formed on the substrate 1 using, for example, copper, nickel, gold, tin, solder, etc., and the transparent substrate A solid-state image sensing device 2 is connected to the semiconductor device 1 via a protruding electrode 3 made of gold, solder, or the like. Then, the space between the transparent substrate 1 and the solid-state image sensor 2 is sealed with an optically transparent resin 4, and the periphery thereof is further sealed with a light-shielding resin 5. Next, on the opposite side of the transparent substrate 1, in accordance with the light receiving part of the solid-state image sensor 2, an optical component 6 capable of bending the optical path, such as a prism or a mirror, is installed. The transparent adhesive 7 may be used in combination with the following.
【００１０】更に透明基板１の固体撮像素子２を搭載し
た側に、周辺回路を構成するＩＣ８を配置して金，ハン
ダ等の突起電極を介して配線パターンに接続し、遮光樹
脂５で封止する。またＩＣ８を実装した基板１の反対側
に、電気部品９をハンダ，導電性樹脂等により接続し、
更に基板１の端部に外部信号用リード線１０をハンダ、
超音波接続，熱圧着，超音波併用熱圧着により接続する
。Further, an IC 8 constituting a peripheral circuit is arranged on the side of the transparent substrate 1 on which the solid-state image sensor 2 is mounted, connected to the wiring pattern through protruding electrodes such as gold or solder, and sealed with a light-shielding resin 5. do. In addition, an electrical component 9 is connected to the opposite side of the board 1 on which the IC 8 is mounted using solder, conductive resin, etc.
Furthermore, solder the external signal lead wire 10 to the end of the board 1.
Connections are made by ultrasonic bonding, thermocompression bonding, and thermocompression bonding combined with ultrasonic waves.
【００１１】このように透明基板１を用いて、その両側
に固体撮像素子２，光学部品６等を実装したので、小型
化を計ることができる。なお固体撮像素子２とＩＣ８と
を封止する遮光樹脂５は同時に形成してもよい。[0011] Since the solid-state image sensor 2, optical components 6, etc. are mounted on both sides of the transparent substrate 1 in this manner, it is possible to reduce the size. Note that the light-shielding resin 5 for sealing the solid-state image sensor 2 and the IC 8 may be formed at the same time.
【００１２】図２は、第２実施例を示す概略断面図であ
る。この実施例は、電気部品等の実装スペースを広くす
るため、フレキシブルプリント基板，メタル基板等の折
り曲げ自由なフレキシブル基板１１に電気部品９を実装
し、光学部品６の傾斜面に載置して、その一端を透明基
板１に固着し、ボンディングワイヤ１２で電気的に接続
するものである。この実施例によれば、外形サイズを大
きくすることなく、更に多数の電気部品を実装すること
ができる。FIG. 2 is a schematic cross-sectional view showing a second embodiment. In this embodiment, in order to increase the mounting space for electrical components and the like, the electrical components 9 are mounted on a flexible board 11 that can be bent freely, such as a flexible printed circuit board or a metal board, and placed on the inclined surface of the optical component 6. One end thereof is fixed to a transparent substrate 1 and electrically connected with a bonding wire 12. According to this embodiment, a larger number of electrical components can be mounted without increasing the external size.
【００１３】図３は、本発明の第３実施例を示す概略断
面図である。この実施例は、図１に示した第１実施例に
おいて、固体撮像素子２とＩＣ８とを遮光樹脂５を用い
て封止する前に、固体撮像素子２とＩＣ８の裏面に、同
一又は別体の金属板１５（図示例では同一金属板）を接
着する。そして金属板１５の露出部は、樹脂，酸化膜等
により絶縁処理し、金属板１５と透明基板１の間を遮光
樹脂５で封止するものである。FIG. 3 is a schematic cross-sectional view showing a third embodiment of the present invention. In this embodiment, in the first embodiment shown in FIG. metal plates 15 (in the illustrated example, the same metal plates) are bonded together. The exposed portion of the metal plate 15 is insulated with resin, oxide film, etc., and the space between the metal plate 15 and the transparent substrate 1 is sealed with a light-shielding resin 5.
【００１４】この実施例によれば、裏面が平坦化され、
次工程での作業が容易になる。また遮光樹脂による固体
撮像素子及びＩＣの封止が容易になり、更にはまた金属
板をＧＮＤ電位にすることにより外部からのノイズ対策
になり、放熱性も向上する等の利点が得られる。According to this embodiment, the back surface is flattened,
Work in the next process becomes easier. In addition, it becomes easy to seal the solid-state image sensor and IC with the light-shielding resin, and furthermore, by setting the metal plate to the GND potential, it becomes a countermeasure against noise from the outside, and there are advantages such as improved heat dissipation.
【００１５】図４は、本発明の第４実施例を示す一部省
略分解斜視図である。この実施例は、透明基板１に対し
て固体撮像素子２及び光学部品６を接続固着する場合に
、容易に高精度の位置合わせが行えるようにするため、
合わせマークを形成したものである。光学部品６には蒸
着，印刷などの方法により合わせマーク１６を形成し、
透明基板１上にはＣｕ， Ｃｒ， Ｎｉ， Ａｕ等の配
線パターン材料により配線パターン１９を形成する時に
同時に合わせマーク１７を形成し、また固体撮像素子２
には電極材料Ａｌなどで合わせマーク１８を形成する。
合わせマークの形状は、容易に位置合わせできる形状で
あればよく、＋印，□印，○印等いずれでもよい。合わ
せマークの大きさは、固体撮像素子の合わせマーク１８
＞透明基板の合わせマーク１７＞光学部品の合わせマー
ク１６の順とする。FIG. 4 is a partially omitted exploded perspective view showing a fourth embodiment of the present invention. In this embodiment, when connecting and fixing the solid-state image sensor 2 and the optical component 6 to the transparent substrate 1, in order to easily perform highly accurate positioning,
A alignment mark is formed. An alignment mark 16 is formed on the optical component 6 by a method such as vapor deposition or printing.
Alignment marks 17 are formed on the transparent substrate 1 at the same time as the wiring pattern 19 is formed using a wiring pattern material such as Cu, Cr, Ni, Au, etc.
An alignment mark 18 is formed using an electrode material such as Al. The shape of the alignment mark may be any shape as long as it can be easily aligned, such as a + mark, a □ mark, or a ○ mark. The size of the alignment mark is the alignment mark 18 of the solid-state image sensor.
> Transparent substrate alignment mark 17 > Optical component alignment mark 16.
【００１６】図５は、本発明の第５実施例の一部省略断
面図である。この実施例は、透明基板１の固体撮像素子
２の受光部に対応する受光領域２１に、反射防止膜又は
特定波長を遮断する膜２２を形成するものである。反射
防止膜を設けた場合は、光の透過率を大きくすることが
でき、一方特定波長を遮断する膜を設けた場合は、特定
波長をカットとして必要な波長の光のみを固体撮像素子
に入射させることができる。なおこれらの膜２２は透明
基板１の片面にのみ形成してもよい。FIG. 5 is a partially omitted sectional view of a fifth embodiment of the present invention. In this embodiment, an antireflection film or a film 22 that blocks specific wavelengths is formed in a light-receiving area 21 of a transparent substrate 1 corresponding to a light-receiving part of a solid-state image sensor 2. If an anti-reflection film is provided, the transmittance of light can be increased, while if a film is provided that blocks specific wavelengths, the specific wavelengths will be cut and only the light of the necessary wavelength will be incident on the solid-state image sensor. can be done. Note that these films 22 may be formed only on one side of the transparent substrate 1.
【００１７】[0017]
【発明の効果】以上実施例に基づいて説明したように、
本発明によれば、透明基板を用いて、その両側に固体撮
像素子，光学部品等の構成部品を実装するように構成し
たので、実装面積が小さくなり、且つハンダ付けによる
接続個所がなくなり、超小型化した固体撮像装置を容易
に実現することができる。[Effect of the invention] As explained above based on the embodiments,
According to the present invention, since a transparent substrate is used and components such as a solid-state image sensor and optical components are mounted on both sides of the substrate, the mounting area is reduced, and there are no soldering connection points, making it possible to A compact solid-state imaging device can be easily realized.
【図１】本発明に係る固体撮像装置の第１実施例を示す
概略断面図である。FIG. 1 is a schematic cross-sectional view showing a first embodiment of a solid-state imaging device according to the present invention.
【図２】第２実施例を示す概略断面図である。FIG. 2 is a schematic cross-sectional view showing a second embodiment.
【図３】第３実施例を示す概略断面図である。FIG. 3 is a schematic cross-sectional view showing a third embodiment.
【図４】第４実施例を示す一部省略斜視図である。FIG. 4 is a partially omitted perspective view showing a fourth embodiment.
【図５】第５実施例を示す一部省略断面図である。FIG. 5 is a partially omitted sectional view showing a fifth embodiment.
【図６】従来の固体撮像装置の構成例を示す断面図であ
る。FIG. 6 is a cross-sectional view showing a configuration example of a conventional solid-state imaging device.
【図７】従来の固体撮像装置の他の構成例を示す断面図
である。FIG. 7 is a sectional view showing another configuration example of a conventional solid-state imaging device.
１ 透明基板 ２ 固体撮像素子 ３ 突起電極 ４ 透明樹脂 ５ 遮光樹脂 ６ 光学部品 ７ 透明接着剤 ８ ＩＣ ９ 電気部品 １０ 外部信号線 １１ フレキシブル基板 １２ ボンディングワイヤ １５ 金属板 １６ 合わせマーク １７ 合わせマーク １８ 合わせマーク １９ 配線パターン ２１ 受光領域 1 Transparent substrate 2 Solid-state image sensor 3 Protruding electrode 4 Transparent resin 5. Light-shielding resin 6. Optical parts 7 Transparent adhesive 8 IC 9 Electrical parts 10 External signal line 11 Flexible board 12 Bonding wire 15 Metal plate 16 Alignment mark 17 Alignment mark 18 Alignment mark 19 Wiring pattern 21 Light receiving area
Claims (5)
、該透明基板上に配置され配線パターンに突起電極を介
して接続された固体撮像素子と、該固体撮像素子の受光
部に対応した前記基板の反対側の面に接着された光学部
品と、前記基板の両面に配置され、配線パターンを介し
て前記固体撮像素子と接続された周辺回路構成用の半導
体素子及び電気部品とからなり、少なくとも前記固体撮
像素子を遮光性樹脂で封止したことを特徴とする固体撮
像装置。1. A transparent substrate on which a wiring pattern is formed, a solid-state image sensor disposed on the transparent substrate and connected to the wiring pattern via a protruding electrode, and the substrate corresponding to a light-receiving section of the solid-state image sensor. an optical component bonded to the opposite surface of the substrate, and semiconductor elements and electrical components for peripheral circuitry arranged on both surfaces of the substrate and connected to the solid-state image sensor through a wiring pattern, and at least the A solid-state imaging device characterized in that a solid-state imaging device is sealed with a light-shielding resin.
合わせ用のマークを設けると共に、前記透明基板の所定
位置に共通の位置合わせ用のマークを設けたことを特徴
とする請求項１記載の固体撮像装置。2. The solid state according to claim 1, wherein alignment marks are provided on the solid-state image sensor and optical components, and a common alignment mark is provided at a predetermined position on the transparent substrate. Imaging device.
合わせ用のマークは、該透明基板の配線パターンと同一
部材で形成されていることを特徴とする請求項２記載の
固体撮像装置。3. The solid-state imaging device according to claim 2, wherein the common alignment mark provided on the transparent substrate is formed of the same material as the wiring pattern of the transparent substrate.
撮像素子を配置した側の透明基板に配置されている半導
体素子の裏面に、同一又は別体の金属板を接着したこと
を特徴とする請求項１〜３のいずれか１項に記載の固体
撮像装置。4. A metal plate, which may be the same or different, is bonded to the back surface of the solid-state image sensor and to the back surface of the semiconductor element placed on the transparent substrate on the side on which the solid-state image sensor is placed. The solid-state imaging device according to claim 1 .
に対応する受光領域に、反射防止膜又は特定波長を遮断
する膜を形成したことを特徴とする請求項１〜４のいず
れか１項に記載の固体撮像装置。5. An anti-reflection film or a film that blocks specific wavelengths is formed in a light-receiving area of the transparent substrate corresponding to a light-receiving part of a solid-state image sensor. The solid-state imaging device described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3012394A JPH04235475A (en) | 1991-01-10 | 1991-01-10 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3012394A JPH04235475A (en) | 1991-01-10 | 1991-01-10 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04235475A true JPH04235475A (en) | 1992-08-24 |
Family
ID=11804056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3012394A Withdrawn JPH04235475A (en) | 1991-01-10 | 1991-01-10 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04235475A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1081944A2 (en) | 1999-09-03 | 2001-03-07 | Sony Corporation | Imaging element, imaging device, camera module and camera system |
| US6476870B2 (en) | 1994-10-28 | 2002-11-05 | Tvi Vision Oy | Method for adjusting a photodetector array and a beam-splitting and detector structure for a line scan camera |
| JP2008258949A (en) * | 2007-04-05 | 2008-10-23 | Iwate Toshiba Electronics Co Ltd | Solid-state imaging apparatus |
| JP2010050518A (en) * | 2008-08-19 | 2010-03-04 | Canon Inc | Solid-state imaging device and electronic imaging device |
| US8098312B2 (en) | 2008-05-29 | 2012-01-17 | Kabushiki Kaisha Toshiba | Back-illuminated type solid-state image pickup apparatus with peripheral circuit unit |
| US20140042578A1 (en) * | 1996-05-17 | 2014-02-13 | Sony Corporation | Solid-state imaging apparatus and camera using the same |
| WO2014188788A1 (en) * | 2013-05-22 | 2014-11-27 | オリンパス株式会社 | Image pickup apparatus, image pickup apparatus manufacturing method, and endoscope system |
| WO2018105391A1 (en) * | 2016-12-05 | 2018-06-14 | オリンパス株式会社 | Electronic circuit unit, image capturing unit, and method of connecting endoscope and electronic circuit unit |
-
1991
- 1991-01-10 JP JP3012394A patent/JPH04235475A/en not_active Withdrawn
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6476870B2 (en) | 1994-10-28 | 2002-11-05 | Tvi Vision Oy | Method for adjusting a photodetector array and a beam-splitting and detector structure for a line scan camera |
| US20140042578A1 (en) * | 1996-05-17 | 2014-02-13 | Sony Corporation | Solid-state imaging apparatus and camera using the same |
| EP1081944A2 (en) | 1999-09-03 | 2001-03-07 | Sony Corporation | Imaging element, imaging device, camera module and camera system |
| EP1081944A3 (en) * | 1999-09-03 | 2002-10-16 | Sony Corporation | Imaging element, imaging device, camera module and camera system |
| US7375757B1 (en) | 1999-09-03 | 2008-05-20 | Sony Corporation | Imaging element, imaging device, camera module and camera system |
| US7414663B2 (en) | 1999-09-03 | 2008-08-19 | Sony Corporation | Imaging element, imaging device, camera module and camera system |
| EP3148176A1 (en) * | 1999-09-03 | 2017-03-29 | Sony Corporation | Camera module and camera system |
| EP2309719A3 (en) * | 1999-09-03 | 2012-04-18 | Sony Corporation | Imaging element, imaging device, camera module and camera system |
| US8045026B2 (en) | 2007-04-05 | 2011-10-25 | Kabushiki Kaisha Toshiba | Solid-state image sensing device |
| JP4724145B2 (en) * | 2007-04-05 | 2011-07-13 | 岩手東芝エレクトロニクス株式会社 | The camera module |
| JP2008258949A (en) * | 2007-04-05 | 2008-10-23 | Iwate Toshiba Electronics Co Ltd | Solid-state imaging apparatus |
| US8098312B2 (en) | 2008-05-29 | 2012-01-17 | Kabushiki Kaisha Toshiba | Back-illuminated type solid-state image pickup apparatus with peripheral circuit unit |
| JP2010050518A (en) * | 2008-08-19 | 2010-03-04 | Canon Inc | Solid-state imaging device and electronic imaging device |
| WO2014188788A1 (en) * | 2013-05-22 | 2014-11-27 | オリンパス株式会社 | Image pickup apparatus, image pickup apparatus manufacturing method, and endoscope system |
| JP2014230083A (en) * | 2013-05-22 | 2014-12-08 | オリンパス株式会社 | Imaging apparatus, imaging apparatus manufacturing method, and endoscope system |
| CN105247848A (en) * | 2013-05-22 | 2016-01-13 | 奥林巴斯株式会社 | Systems and methods for selecting media items |
| EP3001673A4 (en) * | 2013-05-22 | 2016-12-28 | Olympus Corp | Image pickup apparatus, image pickup apparatus manufacturing method, and endoscope system |
| WO2018105391A1 (en) * | 2016-12-05 | 2018-06-14 | オリンパス株式会社 | Electronic circuit unit, image capturing unit, and method of connecting endoscope and electronic circuit unit |
| US10653306B2 (en) | 2016-12-05 | 2020-05-19 | Olympus Corporation | Electronic circuit unit, imaging unit, and endoscope |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2746171B2 (en) | Solid-state imaging device and manufacturing method thereof | |
| EP2261993B1 (en) | Semiconductor device | |
| US7414663B2 (en) | Imaging element, imaging device, camera module and camera system | |
| KR20040095732A (en) | Solid-state imaging device, camera module, and camera-module manufacturing method | |
| WO2001065838A1 (en) | Small-sized image pickup module | |
| JP2004242166A (en) | Optical module, its manufacturing method, and electronic equipment | |
| KR100374959B1 (en) | Solid-state imaging device and mounting method thereof | |
| US20220102406A1 (en) | Package structure, packaging method, camera module, and electronic equipment | |
| JPH05115435A (en) | Solid-state image pickup device | |
| JP3867785B2 (en) | Optical module | |
| JPH04235475A (en) | Solid-state image pickup device | |
| CN210075377U (en) | Camera encapsulation module | |
| JP2000049319A (en) | Solid-state image-pickup device | |
| JP2004221875A (en) | Optical module, manufacturing method therefor and electronic apparatus | |
| JP2004335533A (en) | Multi-chip package | |
| JPS63240825A (en) | Endoscope | |
| KR100510625B1 (en) | Method for making a solid-state imaging device | |
| JPH04235476A (en) | Solid-state image pick-up device | |
| JP2006134392A (en) | Optical device and manufacturing method therefor | |
| JPH04317280A (en) | Solid state image pickup device | |
| JPH08307777A (en) | Solid-state image pickup device of electron endoscope | |
| JPH04235477A (en) | Solid-state image pickup device | |
| JP2003060175A (en) | Solid state imaging device | |
| JP2831689B2 (en) | Solid-state imaging device | |
| JPH0621415A (en) | Solid-state image sensing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980514 |