200840333 九、發明說明： 【發明所屬之技術領域】 本發明是關於影像感測器封裝及其應用之影像攝取裝 置尤其係關於一種小尺寸影像感測器封裝及一種小尺寸影 像攝取裝置。 【先前技術】 影像感測器係數位攝像產品中之核心元件之一，爲改 卜善其成像品質，將一些被動元件與影像感測器整合為一 體，從而減少影像感測器於訊號切換及傳輸過程中産生之 雜訊串音。 請參閱圖1，習知之一整合有被動元件之影像感測器 封裝10,其包括一基體1 、一支撐件2、一影像感測晶片 3、一被動元件4、一透明蓋板5，所述支撐件2設置於所 述基體1上與其形成一容腔6，所述影像感測晶片容置於 #該容腔6内且與所述基體1電性及結構性連接，二被動元 v件4也容置於所述容腔6内與所述基體1電性及結構性連 接，所述透明蓋板5固設於所述支撐件2上將所述容腔6 雄封。該衫像感測裔將被動元件4及影像感測晶片3整合 於同一封裝體内，從而達到改善訊號傳輸置質量之目的， 然，此種封裝結構需於基體i上爲被動元件4安裝預留一 定之空間，因此使得整個影像感測器封裝之體積增大，不 利於影像感測器封裝之小型化及應用該影像感測器封裝之 産品小型化。 6 200840333 【發明内容】 . 有馨於此’有必要提供一有效利用空間之小型化影像 感測器封裝。 • 還有必要提供一可有效利用空間之應用該影像感測器 封裝之影像攝取裝置 一種影像感測器封裝，包括一影像感測晶片、一基體、 一蓋板及至少一被動元件，所述影像感測晶片包括一上表 面及一下表面，於其上表面上形成有感測區及環繞該感測 【區之非感測區’所述感測區用以感測光線並將其轉換爲電 訊號’該影像感測晶片電性及結構性連接於所述基體上， 蓋板由基體支樓於影像感測晶片之上方，該影像感測器封 裝還包括一載體，該載體設置於所述影像感測晶片之非影 像感測區上，被動元件設置於該載體上，並與該上述基體 電性連接。 一種影像感測器封裝其包括一基體；一影像感測晶 片所述衫像感測晶片包括一上表面及一下表面，於其上 、 表面上开> 成有感測區及環繞該感測區之非感測區，所述感 測區用以感測光線並將其轉換爲電訊號，該影像感測晶片 電性及結構性連接於所述基體上；一蓋板，該蓋板包括一 電極區及一非電極區，所述非電極區與所述影像感測晶片之 感測區相對正，該蓋板由所述基體支撐於所述影像感測晶片 上方；至少一被動元件，該被動元件設置於所述蓋板之電極區 内並與所述基體電性連接。 一影像攝取裝置，其包括一鏡頭模組及與該鏡頭模組 7 200840333 相對正設置之影像感測器封裝，該影像感測器封裝包括一 •影像感測晶片、一基體、一蓋板及至少一被動元件，所述 影像感測晶片包括一上表面及一下表面，於其上表面上形 成有感測區及環繞該感測區之非感測區，所述感測區用以 感測光線並將其轉換爲電訊號，該影像感測晶片電性及結 .構性連接於所述基體上，蓋板由基體支撐於影像感測晶片 •上方’該影像感測器封裝运包括一載體’該載體設置於所 述影像感測晶片之非影像感測區上，被動元件設置於該載 : 體上，並與所述基體電性連接。 一種影像攝取裝置，其包括：一電路板；一影像感測晶 片，該影像感測晶片包括一上表面及一下表面，於其上表面上 形成有感測區及環繞該感測區之非感測區，所述感測區用以 感測光線並將其轉換爲電訊號，該影像感測晶片電性及結構 性連接於所述電路板上；一載體，該載體設置於所述影像感 測晶片之非影像感測區上；至少一個被動元件，該被動元件 、設置於所述載體上，並與所述基體電性連接；一鏡頭模組， 該鏡頭模組罩設於所述電路板上並將所述影像感測晶片收 容於其内。 、相較習知技術，本發明採用將被動元件設置於影像感 j晶片之非影像感測區上’無需於基體上再爲被動元件之 安裝預留空間’能夠有效利用空間，從而達成減小封裝體 8 200840333 【實施方式】 以下結合附圖對本技術方案實施例提供之影像攝取裝 置進一步說明。 請參閱圖2，本發明影像攝取裝置之第一較佳實施 例，該影像攝取裝置100包括一影像感測器封裝Π0及一 鏡頭模組130。所述影像感測器封裝110與鏡頭模組對正 設置。 影像感測器封裝110包括有一基體112、一影像感測 晶片114、一載體116、二個被動元件117、多條導線118 及一蓋板119。 基體112用於容置影像感測晶片114,該基體112包 括一上表面1122及一下表面1124，於其上表面1122上設 置有多個電性連接塊1123，於其下表面上1124設置有多 個對應於電性連接塊1123之導電凸塊1125，所述電性連 接塊1123與導電凸塊1125通過設置於該基體112内部之 電路相電連接。 影像感測晶片114爲一光敏元件，可將光訊號轉化爲 電訊號，該影像感測晶片114有一上表面1142及一下表面 1144，其上表面1142包括一感測區1145及環繞該感測區 1145之非感測區1146，於所述非感測區1146上設置有多 個晶片焊墊1147。該影像感測晶片114通過其下表面1144 固設於基體112之上表面1122上。 載體116爲一薄形連接層，主要爲被連接件提供結構 性連接。可以理解該載體116也可同時爲被連接件提供電 9 200840333 性連接，該載體116主要由樹脂粘著劑組成，此外也可於 .樹脂粘著劑中填充一些導電粒子構成異方性導電連接層， 即該導電膜於同一方向可電氣導通，而於其他方向絕緣， 同時結合一些電極1162組成一結構性及電性連接層，該電 極1162形成於充有導電粒子之樹脂中。該載體116中樹脂 粘著劑部分可用以提供防濕氣、接著、耐熱、絕緣以及固 定被連接件與該載體116内之電極1162之相對位置，並提 供一定之壓迫力以維持電極與導電粒子間之接觸面積。導 # 電粒子用於將被連接件之電極與設置於載體116内之電極 1162電連接。該載體116設置於影像感測晶片114上表面 1142之非感測區1146上。 被動元件117係用以改善影像感測訊號傳輸品質之元 件，其可以是電感元件、電容元件或者電阻元件，其設置 於載體116上，該被動元件117上還設置有多個電極（圖未 標），所述被動元件117之電極與載體116内之電極1162 通過載體116内之導電粒子相電連接。 % 導線118用於將影像感測晶片114及被動元件117分 別電連接至基體112上，其中一部分導線118之一端連接 於影像感測晶片114之晶片焊墊1147上，另一端連接於基 體112之電性連接塊1123上，用以將影像感測晶片114 電連接至基體112上；另一部分導線118之一端連接於與 被動元件117之電極相電連接之載體116之電極1162上， 該導線118之另一端連接於基體112之電性連接塊1123， 用以將被動元件117電連接至基體112上。 200840333 透光蓋板119設置於基體112上，與基體112 —同將 影像感測晶片114密封，從而將影像感測晶片114與外部 银境隔離’提南影像感測晶片114之可罪性。 所述鏡頭130包括一鏡筒132、一鏡座134及一粘接 材料136，所述鏡筒132爲一中空柱體，其内部設置有至 少一組鏡片1324,用以供所需之光線穿過，該鏡筒132之 一端容置於鏡座134内。鏡座134爲一階梯狀中空柱體， 其包括第一容置部1342及位於其下方且與其相連通之第 " 二容置部1344，所述第二容置部1344之内徑大於第一容 置部1344之内徑。所述第二容置部1344包括一侧壁 1346，該鏡座134由其第二容置部1344之侧壁1346通過 所述粘接材料136與影像感測器封裝110相連接成一體， 並將影像感測器封裝110收容于其第二容置部1344内。可 以理解，所述鏡座134之第一容置部1342及第二容置部 1344之内徑可以根據不同需求而作相應變化，如上兩者内 徑相同或者後者小於前者亦可適用於本發明。所述鏡頭模 組130亦可通過其鏡座134固設於影像感測器110之頂部。 本實施例中，用載體116將被動元件117設置於影像 感測晶片114之非影像感測區1146上，與影像感測晶片 114 一同封裝，從而提高了影像感測晶片114之非影像感 測區1146之表面利用率，節省空間，無需於基體112上爲 被動元件再預留空間，提高了該影像感測器封裝110及應 用該影像感測器封裝110之影像攝取裝置1〇〇之空間利用 率，從實現小型化影像攝取裝置100之目的。 11 200840333 請參閱圖3，本發明影像攝取裝置之第二較佳實施 例，該影像攝取裝置200與影像攝取裝置100相似，其包 括影像感測器封裝210、載體230、被動元件240及鏡頭模 組 260 〇 所述影像感測器封裝210包括一基體212、一影像感 測晶片214及一蓋板216。該基體212包括第一表面2122 及第二表面2124，其第一表面2122上還形成有一凸框 2126，該凸框2126及所述第一表面2122圍成一容腔 2127,所述影像感測晶片214設置於該容腔2127内。影像 感測晶片214爲一光敏元件，可將光訊號轉化爲電訊號， 該影像感測晶片214有一上表面2142及一下表面2144， 其上表面2142包括一感測區2145及環繞該感測區2145 之非感測區2146,該影像感測晶片214通過其下表面2144 固設於基體212之上並與該基體212電性連接。蓋板216 包括正面2162及背面2164，該蓋板216通過其背面2164 之邊緣部分設置於基體212之凸框2126上，用於將影像感 測晶片214與外部環境隔離，從提高影像感測晶片214之 可靠性。 所述鏡頭模組260包括一鏡筒262、一鏡座264及一 粘接材料266,所述鏡筒262内設置有至少一組鏡片2624, 該鏡筒262之一端容置於鏡座264之一端，該鏡座264未 設置鏡筒262之一端通過粘接材料266與所述影像感測器 封裝210連接成一體。 該影像攝取裝置200與影像攝取裝置100之區別在於： 12 200840333 所述影像感測器封裝210中基體212之凸框2126之頂 部還設置有多個導電片2128,該導電片2128通過設置於 基體212内部之電路電性連接至212之下表面2144上，並 可通過設置於下表面2144上之電性連接點2129電連接。 所述蓋板216之背面2164還包括有一非電極區2165 及壞繞該非電極區216 5之電極區216 6 ’所述非電極區216 5 與設置於該蓋板216下方之影像感測晶片214之感測區 2145相對正，非電極區2165之面積等於或者大於所述感 測區2145之面積，蓋板216之電極區2166上設置有多個 電極2167，所述每一電極2167之一端均由蓋板216壓合 於所述基體212之凸框2126之頂部之導電片2128上與其 電性連接。 所述載體230爲一薄形連接層，可起到電性連接及結 構性連接之作用，如異方性導電膜或異方性導電膏等連接 材料，該載體230設置於上述蓋板216背面2164之電極區 2166 上。 所述被動元件240設置於上述載體230上，由所述載 體230結構性及電性連接於蓋板216之電極區2166。 本實施例中，採用於影像感測器封裝210之蓋板216 上設置導電電極2167,將被動元件240通過載體230結構 性及電性連接於該蓋板216上，再將該蓋板216壓合於基 體212之凸框2126上，並將導電電極2167分別壓合於凸 框2126頂部之導電片2128上，並經由設置於基體212内 部之電路與電性連接點2129電連接。將被動元件240設置 13 200840333 於影像感測器封裝210中蓋板216與影像感測晶片214之 非感測區2146之間所形成之空間内，從而提高該影像感測 器封裝210及應用該影像感測器封裝210之影像攝取裝置 200之空間利用率，達到影像攝取裝置200及影像感測器 封裝210小型化之目的。 請參閱圖4本發明影像攝取裝置之第三較佳實施例， 該影像攝取裝置300與影像攝取裝置200相似，其包括影 像感測器封裝310、載體330、被動元件340及鏡頭模組 '360。 所述影像感測器封裝310包括一基體312、一影像感 測晶片314及一蓋板316。該基體312包括第一表面3122 及第二表面3124，其第一表面3122上還形成有一凸框 3126，該凸框3126及所述第一表面3122圍成一容腔 3127，所述影像感測晶片314設置於該容腔3127内。所述 基體312之凸框3126之頂部還設置有多個導電片3128, . 該導電片3128通過設置於基體312内部之電路與設置於基 % 體312下表面3124上之電性連接點3129相電連接。 影像感測晶片314爲一光敏元件，可將光訊號轉化爲 電訊號，該影像感測晶片314有一上表面3142及一下表面 3144，其上表面3142包括一感測區3145及環繞該感測區 3145之非感測區3146,該影像感測晶片314通過其下表面 3144固設於基體312上並與該基體312電性連接。蓋板316 包括正面3162及背面3164,該蓋板通過其背面3164之邊 緣部分設置於基體312之凸框3126上，用於將影像感測晶 14 200840333 片314與外部環境隔離，從提高影像感測晶片3i4之可靠 性。 所述鏡頭模組360包括一鏡筒362、一鏡座364及一 -粘接材料366,所述鏡筒362内設置有至少一組鏡片3624, 該鏡筒362之一端容置於鏡座364之一端，該鏡座364未 设置鏡同3 6 2之一知通過钻接材料3 6 6與影像感測器封裝 310連接成一體。 該影像攝取裝置300與影像攝取裝置200之區別在於： 〔 所述蓋板316之正面3162還包括有一非電極區3165 及環繞該非電極區3165之電極區3166,所述非電極區3165 與設置於該蓋板316下方之影像感測晶片314之感測區 3145相對正，非電極區3165之面積等於或者大於所述感 測區3145之面積，蓋板316之電極區3166上設置有多個 導電電極3167，所述每一導電電極3167之一端設置於所 述電極區3166内，其另一端沿蓋板316之端侧經兩次彎折 後固設於蓋透明板316之背面3164之邊緣，所述導電電極 / . i 3167均由蓋板316壓合於所述基體312之凸框3126頂部 之導電片3128上並與其電性連接。 所述載體330爲一薄形連接層，可起到電性連接及結 構性連接之作用，如異方性導電膜或異方性導電膏等連接 材料，該載體330設置於上述蓋板316正面3162之電極區 3166 上。 所述被動元件340設置於上述載體330上，由所述載 體330結構性及電性連接於蓋板316之電極區域内。 15 200840333 本實施中採用將被動元件340設置於影像感測器封裝 310之透明蓋316上之電極區3166内，該電極區3166對 應與影像感測器封裝310中影像感測晶片314之非影像感 測區3146,從而無需再於電路板320上爲被動元件340預 留空間，從而節省空間，達到減小影像感測器封裝310及 應用該影像感測器封裝310之影像攝取裝置300之體積之 目的。 請參閱圖5，本發明影像攝取裝置之第四較佳實施 例，該影像攝取裝置400與影像攝取裝置300相似，其包 括影像感測器封裝410、載體430、被動元件440及鏡頭模 組 460 〇 所述影像感測器封裝410包括一基體412、一影像感 測晶片414及一蓋板416。該基體412包括第一表面4122 及第二表面4124，其第一表面4122上還形成有一凸框 4126，該凸框4126及所述第一表面4122圍成一容腔 4127，所述影像感測晶片414設置於該容腔4127内。 影像感測晶片414爲一光敏元件，可將光訊號轉化爲 電訊號，該影像感測晶片414有一上表面4142及一下表面 4144，其上表面4142包括一感測區4145及環繞該感測區 4145之非感測區4146,該影像感測晶片414通過其下表面 4144固設於基體412上並與該基體412電性連接。 蓋板416包括正面4162及背面4164，該蓋板之正面 4162還包括有一非電極區4165及環繞該非電極區4165之 電極區4166，所述非電極區4165與設置於該蓋板416下 16 200840333 方之影像感測晶片414之感測區4145相對正，非電極區 4165之面積等於或者大於所述感測區4145之面積，蓋板 416之電極區4166内設置有多個導電電極4167,該蓋板通 過其背面4164之邊緣部分設置於基體412之凸框4126 上，用於將影像感測晶片414與外部環境隔離，從提高影 像感測晶片414之可靠性。 所述載體430爲一薄形連接層，可起到電性連接及結 構性連接之作用，如異方性導電膜或異方性導電膏等連接 材料，該載體430設置於上述蓋板416之正面4162之電極 區4166上。 所述被動元件440設置於上述載體430上，由所述載 體430結構性及電性連接於蓋板416之電極區域内。 所述鏡頭模組460包括一鏡筒462及鏡座464，所述 鏡筒462内設置有至少一組鏡片，該鏡筒462之一端容置 於鏡座464之一端。 該影像攝取裝置400與影像攝取裝置300之區別在於： 該影像攝取裝置400還包括一電路板420及多條導線 450，該電路板420上設置圖形化線路，用以進行電氣傳 輸。所述影像感測器封裝410通過其基體412之第二表面 4124結構性及電性連接於所述電路板420之上，所述鏡頭 模組460未設置鏡筒462之一端連接於所述電路板420上 並將所述影像感測器封裝410收容於器内部。 所述多條導線450之一端連接於所述蓋板416之電極 4167上，另一端連接於所述電路板之圖像形化線路上，用 17 200840333 於將設置於蓋板416上之被動元件440電連接至所述電路 ^板420上。可以理解，亦可於載體430中設Ϊ 一些電極， 並通過導線450電性連接於所述電路板420之上，從而將 被動元件440電連接至電路板420上。 本實施中影像攝取裝置400與影像攝取裝置300相 似，採用將被動元件440設置於影像感測器封裝410之蓋 板416上之電極區4166内，該電極區4166對應與影像感 , 蜊器封裝410中影像感測晶片414之非影像感測區4146， 從而無需再在電路板420上爲被動元件440預留空間，從 而節省空間，達到減小影像感測器封裝410及應用該影像 感測器封裝410之影像攝取裝置400體積之目的。 請參閱圖6，本發明影像攝取裝置之第五較佳實施 例，該影像攝取裝置500包括電路板510、影像感測晶片 52〇、載體530、被動元件540、導線550、鏡座560及鏡 筒 570。 ί . 電路板510用於承載影像感測晶片520及鏡座560， 其上設置有圖案化線路，用於傳輸影像感測晶片520之感 蜊訊號。 影像感測晶片520爲一光敏元件，可將光訊號轉化爲 電訊號，該影像感測晶片520有一上表面522及一下表面 524,其上表面522包括一感測區525及環繞該感測區525 之非感測區526，於所述非感測區526上設置有多個晶片 焊塾527。該影像感測晶片520通過其下表面固設於電路 才反510上。 18 200840333 載體530爲一薄形連接層，主要爲被動元件提供電性 .及結構性連接。主要由樹脂粘著劑、導電離子組成及電極 532異方性導電薄膜，即該導電膜於一方向可電氣導通， 而於其他方向絕緣。所述導電粒子填充於樹脂粘著劑中， 電極532填充有導電粒子之樹脂中，其中樹脂粘著劑部分 可用以提供防濕氣、接著、耐熱、絕緣以及固定被動元件 540與該載體530内之電極532置，並提供一定之壓迫力 以維持電極532粒子間之接觸面積。導電粒子用於將被連 ^ 接件之電極與設置於載體530内之電極532電連接，載體 530設置於影像感測晶片520上表面522之非感測區526 上。 被動元件540係用以改善影像感測訊號傳輸品質之元 件，其可以係電感元件、電容元件或者電阻元件，其設置 於載體530上，該被動元件540上還設置有多個電極（圖未 標），所述被動元件540之電極與載體530内之電極530通 , 過設置於載體530之導電粒子相電連接。 導線550用於將影像感測晶片520及被動元件540分 別電連接至電路板510上，其中部分導線550之一端連接 於影像感測晶片520之晶片焊墊527上，另一端連接於電 路板510之圖案化線路上，用以將影像感測晶片520電連 接至電路板510上；另一部分導線550之一端連接於載體 530之電極上，另一端連接於電路板510之導電線路上， 用以將被動元件540電連接至電路板510上。 鏡座560爲一階梯狀中空柱體，其包括第一容置部562 19 200840333 及位於其下方且與其相連通之第二容置部564,所述第二 容置部564之内徑大於第一容置部562之内徑。所述第二 容置部564包括一側壁566，該鏡座560通過第二容置部 564之側壁566固設於電路板510之上，並將影像感測晶 片520及設置於影像感測晶片520上之被動元件收容與其 第二容置部564内。 所述鏡筒570爲一中孔柱體，該鏡筒570内依次設置 有濾光片572及透鏡574，該鏡筒570之一端收容於鏡座 560之第一容置部562内。光線可通過濾光片572及透鏡 574射入並照射於設置於影像感測晶片520之感測區525 上。 本實施例中，將被動元件540通過載體530設置於影 像感測晶片520之非感測區526上，將影像感測晶片520 之感測區525與晶片焊墊527之間閒置之空間充分利用， 無需再爲被動元件540安裝額外預留空間，從而節省空 間，實現該影像攝取裝置小型化之目的。 綜上所述，本發明符合發明專利要件，爰依法提出專 利申請。惟，以上所述者僅為本發明之較佳實施方式，本 發明之範圍並不以上述實施方式為限，舉凡熟悉本案技藝 之人士，在援依本案發明精神所作之等效修飾或變化，皆 應包含於以下之申請專利範圍内。 【圖式簡單說明】 圖1係習知之一種影像感測器之剖視圖。 圖2係本發明影像攝取裝置第一較佳實施例之剖視圖。 20 200840333 圖3係本發明影像攝取裝置第二較佳實施例之剖視圖。 圖4係本發明影像攝取裝置第三較佳實施例之剖視圖。 圖5係本發明影像攝取裝置第四較佳實施例之剖視圖。 圖6係本發明影像攝取裝置第五較佳實施例之剖視圖。 【主要元件符號說明】 (習知） 影像感測器封裝 10 基體 1 支撐件 2 影像感測晶片 3 被動元件 4 透明蓋板 5 容腔 6 (本發明） 影像攝取裝置 100 、 200 、 300 、 400 、 500 影像感測器封裝 110 、 210 、 310 、 410 基體 112 、 212 、 312 、 412 上表面 1122 > 2122 、3122 、 4122 下表面 1124 、 2124 、3124 、 4124 電性連接塊 1123 導電凸塊 1125 影像感測晶片 114 、 214 、 314 、 414 、 520 上表面 1142 、 2142 、3142 、 4142 、 522 下表面 1144 、 2144 、3144 、 4144 、 524 感測區 1145 、 2145 、3145 、 4145 、 525 非感測區 1146 、 2146 、3146 、 4146 、 526 晶片焊墊 1147 、 527 21 200840333 載體 116、 電極 1162 被動元件 117、 導線 118、 蓋板 119、 鏡頭 130 鏡筒 132、 鏡片 1324 鏡座 134、 第一容置部 1342 第二容置部 1344 側壁 1346 枯接材料 136、 凸框 2126 容腔 2127 導電片 2128 電性連接點 2129 (蓋板）正面 2162 (蓋板）背面 2164 非電極區 2165 電極區 2166 導電電極 2167 鏡頭模組 260、 電路板 420 ^ 230 、 330 、 430 、 530 、532 240 、 340 、 440 、 540 450 、 550 216 、 316 、 416 262 、 362 、 462 、 570 、2624 、 3624 264 、 364 、 464 、 560 、562 、564 λ 566 266 、 366 、 、3126 、 4126 、 > 3127 > 4127 、3128 、2129 、 3129 、3162 、 4162 、3164 、 4164 、3165 、 4165 、3166 、 4166 、3167 、 4167 360 、 460 510 22 572 200840333 濾光片 574 透鏡 23BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image sensor package and an image pickup device therefor, and more particularly to a small-sized image sensor package and a small-sized image pickup device. [Prior Art] One of the core components of the image sensor coefficient camera product is to integrate the passive components with the image sensor to reduce the imaging quality of the image sensor, thereby reducing the image sensor switching and transmission process. The noise crosstalk generated in the middle. Referring to FIG. 1 , an image sensor package 10 incorporating a passive component includes a substrate 1 , a support member 2 , an image sensing chip 3 , a passive component 4 , and a transparent cover 5 . The support member 2 is disposed on the base body 1 and forms a cavity 6 . The image sensing chip is received in the cavity 6 and electrically and structurally connected to the substrate 1 . The member 4 is also disposed in the cavity 6 to be electrically and structurally connected to the base body 1 . The transparent cover plate 5 is fixed on the support member 2 to seal the cavity 6 . The shirt-like sensing body integrates the passive component 4 and the image sensing chip 3 into the same package, thereby improving the quality of the signal transmission. However, the package structure needs to be installed on the substrate i for the passive component 4. A certain amount of space is left, which increases the volume of the entire image sensor package, which is disadvantageous for miniaturization of the image sensor package and miniaturization of the product using the image sensor package. 6 200840333 [Summary of the Invention] It is necessary to provide a compact image sensor package that effectively utilizes space. An image sensor package for use in an image sensor package, including an image sensing chip, a substrate, a cover, and at least one passive component, The image sensing wafer includes an upper surface and a lower surface, and a sensing region is formed on the upper surface thereof and surrounds the sensing region (the non-sensing region of the region) to sense light and convert it into The image sensor chip is electrically and structurally connected to the substrate, and the cover plate is supported by the base support on the image sensing chip. The image sensor package further includes a carrier disposed on the substrate. On the non-image sensing area of the image sensing chip, the passive component is disposed on the carrier and electrically connected to the substrate. An image sensor package includes a substrate; an image sensing wafer, the shirt image sensing wafer includes an upper surface and a lower surface, and is opened on the surface thereof, and has a sensing area and surrounds the sensing a non-sensing area for sensing light and converting it into an electrical signal, the image sensing chip being electrically and structurally connected to the substrate; a cover plate, the cover plate comprising An electrode region and a non-electrode region, the non-electrode region being opposite to the sensing region of the image sensing chip, the cover plate being supported by the substrate above the image sensing wafer; at least one passive component, The passive component is disposed in the electrode region of the cover plate and electrically connected to the base. An image capturing device includes a lens module and an image sensor package disposed opposite the lens module 7 200840333. The image sensor package includes an image sensing chip, a substrate, and a cover plate. At least one passive component, the image sensing wafer includes an upper surface and a lower surface, and a sensing area and a non-sensing area surrounding the sensing area are formed on the upper surface thereof, wherein the sensing area is used to sense light The image is converted into a signal, and the image sensing chip is electrically connected and connected to the substrate, and the cover is supported by the substrate on the image sensing chip. The carrier is disposed on the non-image sensing area of the image sensing chip, and the passive component is disposed on the carrier and electrically connected to the substrate. An image capturing device includes: a circuit board; an image sensing chip, wherein the image sensing chip includes an upper surface and a lower surface, and the sensing area and the non-inductance surrounding the sensing area are formed on the upper surface thereof a sensing area for sensing light and converting it into an electrical signal, the image sensing chip being electrically and structurally connected to the circuit board; a carrier disposed on the image sense a non-image sensing area of the wafer; at least one passive component disposed on the carrier and electrically connected to the substrate; a lens module, the lens module being disposed on the circuit The board houses the image sensing wafer therein. Compared with the prior art, the present invention adopts the passive component disposed on the non-image sensing area of the image sensing chip, and does not need to reserve space for the installation of the passive component on the substrate, thereby effectively utilizing the space, thereby achieving reduction. Package 8 200840333 [Embodiment] The image pickup apparatus provided in the embodiment of the present technical solution will be further described below with reference to the accompanying drawings. Referring to FIG. 2, in a first preferred embodiment of the image capture device of the present invention, the image capture device 100 includes an image sensor package Π0 and a lens module 130. The image sensor package 110 is aligned with the lens module. The image sensor package 110 includes a substrate 112, an image sensing wafer 114, a carrier 116, two passive components 117, a plurality of wires 118, and a cover 119. The substrate 112 is used for accommodating the image sensing wafer 114. The substrate 112 includes an upper surface 1122 and a lower surface 1124. The upper surface 1122 is provided with a plurality of electrical connecting blocks 1123, and a plurality of electrical connecting blocks 1123 are disposed on the lower surface thereof. The conductive bumps 1125 corresponding to the electrical connection blocks 1123 are electrically connected to the conductive bumps 1125 through a circuit disposed inside the substrate 112. The image sensing chip 114 is a photosensitive element that converts the optical signal into an electrical signal. The image sensing wafer 114 has an upper surface 1142 and a lower surface 1144. The upper surface 1142 includes a sensing region 1145 and surrounds the sensing region. A non-sensing area 1146 of 1145 is provided with a plurality of wafer pads 1147 on the non-sensing area 1146. The image sensing wafer 114 is secured to the upper surface 1122 of the substrate 112 by a lower surface 1144 thereof. The carrier 116 is a thin connecting layer that provides a structural connection primarily by the connector. It can be understood that the carrier 116 can also provide the electrical connection 9 200840333 for the connected member. The carrier 116 is mainly composed of a resin adhesive, and can also be filled with some conductive particles in the resin adhesive to form an anisotropic conductive connection. The layer, that is, the conductive film is electrically conductive in the same direction, and is insulated in other directions, and simultaneously combines some electrodes 1162 to form a structural and electrical connection layer, and the electrode 1162 is formed in a resin filled with conductive particles. The resin adhesive portion of the carrier 116 can be used to provide moisture resistance, adhesion, heat resistance, insulation, and the relative position of the attached member to the electrode 1162 in the carrier 116, and provide a certain pressing force to maintain the electrode and the conductive particles. Contact area between. The conductive particles are used to electrically connect the electrodes of the connected member to the electrodes 1162 provided in the carrier 116. The carrier 116 is disposed on the non-sensing area 1146 of the upper surface 1142 of the image sensing wafer 114. The passive component 117 is used to improve the quality of the image sensing signal transmission. The component can be an inductive component, a capacitive component, or a resistive component. The passive component 117 is disposed on the carrier 116. The passive component 117 is further provided with a plurality of electrodes. The electrode of the passive component 117 and the electrode 1162 of the carrier 116 are electrically connected by conductive particles in the carrier 116. The wire 118 is used to electrically connect the image sensing chip 114 and the passive component 117 to the substrate 112. One of the wires 118 is connected to the wafer pad 1147 of the image sensing chip 114, and the other end is connected to the substrate 112. The electrical connection block 1123 is electrically connected to the substrate 112; the other end of the wire 118 is connected to the electrode 1162 of the carrier 116 electrically connected to the electrode of the passive component 117. The other end is connected to the electrical connection block 1123 of the base 112 for electrically connecting the passive component 117 to the base 112. The light transmissive cover 119 is disposed on the base 112 to seal the image sensing wafer 114 with the base 112 to isolate the image sensing wafer 114 from the external silver. The suspicion of the image sensing wafer 114. The lens 130 includes a lens barrel 132, a lens holder 134 and a bonding material 136. The lens barrel 132 is a hollow cylinder having at least one set of lenses 1324 disposed therein for the required light to be worn. One end of the lens barrel 132 is received in the lens holder 134. The lens holder 134 is a stepped hollow cylinder, and includes a first accommodating portion 1342 and a second accommodating portion 1344 located below and communicating with the second accommodating portion 1344. The inner diameter of a receiving portion 1344. The second receiving portion 1344 includes a sidewall 1346. The lens holder 134 is integrally connected to the image sensor package 110 through the bonding material 136 by the sidewall 1346 of the second receiving portion 1344 thereof. The image sensor package 110 is housed in the second receiving portion 1344 thereof. It can be understood that the inner diameters of the first accommodating portion 1342 and the second accommodating portion 1344 of the lens holder 134 can be changed according to different requirements. The inner diameters of the two or the latter are the same or the latter is smaller than the former. . The lens module 130 can also be fixed to the top of the image sensor 110 through its lens holder 134. In this embodiment, the passive component 117 is disposed on the non-image sensing area 1146 of the image sensing chip 114 by the carrier 116, and is packaged together with the image sensing chip 114, thereby improving non-image sensing of the image sensing chip 114. The surface utilization of the area 1146 saves space, and there is no need to reserve a space for the passive component on the substrate 112, thereby improving the space of the image sensor package 110 and the image capturing device using the image sensor package 110. The utilization rate is achieved from the purpose of realizing the miniaturized image capturing apparatus 100. 11 200840333 Referring to FIG. 3, a second preferred embodiment of the image capture device of the present invention, the image capture device 200 is similar to the image capture device 100, and includes an image sensor package 210, a carrier 230, a passive component 240, and a lens module. The image sensor package 210 includes a substrate 212, an image sensing wafer 214 and a cover 216. The base body 212 includes a first surface 2122 and a second surface 2124. The first surface 2122 is further formed with a convex frame 2126. The convex frame 2126 and the first surface 2122 define a cavity 2127. The image sensing is performed. The wafer 214 is disposed in the cavity 2127. The image sensing chip 214 is a photosensitive element that converts the optical signal into an electrical signal. The image sensing wafer 214 has an upper surface 2142 and a lower surface 2144. The upper surface 2142 includes a sensing region 2145 and surrounds the sensing region. The non-sensing area 2146 of the 2145, the image sensing wafer 214 is fixed on the base 212 via the lower surface 2144 thereof and electrically connected to the base 212. The cover 216 includes a front surface 2162 and a rear surface 2164. The cover 216 is disposed on the convex frame 2126 of the base 212 through the edge portion of the back surface 2164 for isolating the image sensing wafer 214 from the external environment. 214 reliability. The lens module 260 includes a lens barrel 262, a lens holder 264 and an adhesive material 266. The lens barrel 262 is provided with at least one set of lenses 2624. One end of the lens barrel 262 is received in the lens holder 264. One end of the lens holder 264 is not provided with one end of the lens barrel 262 and is integrally connected to the image sensor package 210 by an adhesive material 266. The difference between the image capturing device 200 and the image capturing device 100 is as follows: 12 200840333 The top of the convex frame 2126 of the base 212 of the image sensor package 210 is further provided with a plurality of conductive sheets 2128, and the conductive sheets 2128 are disposed on the substrate. The circuitry inside 212 is electrically coupled to the lower surface 2144 of the 212 and is electrically coupled by electrical connection points 2129 disposed on the lower surface 2144. The back surface 2164 of the cover plate 216 further includes a non-electrode region 2165 and an electrode region 216 6 ' of the non-electrode region 216 5 . The non-electrode region 216 5 and the image sensing wafer 214 disposed under the cover plate 216 . The sensing area 2145 is relatively positive, the area of the non-electrode area 2165 is equal to or larger than the area of the sensing area 2145, and the electrode area 2166 of the cover plate 216 is provided with a plurality of electrodes 2167, one end of each of the electrodes 2167 The cover plate 216 is electrically connected to the conductive sheet 2128 at the top of the convex frame 2126 of the base 212. The carrier 230 is a thin connecting layer, which can serve as an electrical connection and a structural connection, such as an anisotropic conductive film or an anisotropic conductive paste. The carrier 230 is disposed on the back surface of the cover 216. 2164 electrode area 2166. The passive component 240 is disposed on the carrier 230, and is electrically and electrically connected to the electrode region 2166 of the cover 216 by the carrier 230. In this embodiment, the conductive electrode 2167 is disposed on the cover 216 of the image sensor package 210, and the passive component 240 is structurally and electrically connected to the cover 216 through the carrier 230, and then the cover 216 is pressed. The conductive frame 2126 is pressed onto the conductive strip 2128 at the top of the convex frame 2126, and electrically connected to the electrical connection point 2129 via a circuit disposed inside the base 212. The passive component 240 is disposed 13 in the space formed between the cover 216 of the image sensor package 210 and the non-sensing area 2146 of the image sensing chip 214, thereby improving the image sensor package 210 and applying the same. The space utilization rate of the image capturing device 200 of the image sensor package 210 achieves the purpose of miniaturization of the image capturing device 200 and the image sensor package 210. Referring to FIG. 4, a third preferred embodiment of the image capture device of the present invention is similar to the image capture device 200. The image capture device 300 includes an image sensor package 310, a carrier 330, a passive component 340, and a lens module '360. . The image sensor package 310 includes a substrate 312, an image sensing wafer 314, and a cover 316. The base 312 includes a first surface 3122 and a second surface 3124. The first surface 3122 further defines a convex frame 3126. The convex frame 3126 and the first surface 3122 define a cavity 3127. The image sensing is performed. The wafer 314 is disposed in the cavity 3127. A plurality of conductive sheets 3128 are disposed on the top of the convex frame 3126 of the base 312. The conductive sheets 3128 are connected to the electrical connection points 3129 disposed on the lower surface 3124 of the base body 312 through a circuit disposed inside the base 312. Electrical connection. The image sensing chip 314 is a photosensitive element that converts the optical signal into an electrical signal. The image sensing chip 314 has an upper surface 3142 and a lower surface 3144. The upper surface 3142 includes a sensing region 3145 and surrounds the sensing region. The non-sensing area 3146 of the 3145, the image sensing wafer 314 is fixed on the base 312 through its lower surface 3144 and electrically connected to the base 312. The cover 316 includes a front surface 3162 and a back surface 3164. The cover is disposed on the convex frame 3126 of the base 312 through the edge portion of the back surface 3164 for isolating the image sensing crystal 14 200840333 sheet 314 from the external environment. The reliability of the wafer 3i4 is measured. The lens module 360 includes a lens barrel 362, a lens holder 364 and a bonding material 366. The lens barrel 362 is provided with at least one set of lenses 3624. One end of the lens barrel 362 is placed on the lens holder 364. In one end, the mirror holder 364 is not provided with a mirror and is connected to the image sensor package 310 by a drilling material 366. The image capturing device 300 differs from the image capturing device 200 in that: [the front surface 3162 of the cover plate 316 further includes a non-electrode region 3165 and an electrode region 3166 surrounding the non-electrode region 3165, and the non-electrode region 3165 is disposed on The sensing area 3145 of the image sensing wafer 314 under the cover 316 is relatively positive, the area of the non-electrode area 3165 is equal to or larger than the area of the sensing area 3145, and the electrode area 3166 of the cover 316 is provided with a plurality of conductive areas. An electrode 3167, one end of each of the conductive electrodes 3167 is disposed in the electrode region 3166, and the other end thereof is bent twice on the end side of the cover plate 316 and then fixed on the edge of the back surface 3164 of the cover transparent plate 316. The conductive electrodes / . i 3167 are respectively pressed by the cover plate 316 to the conductive piece 3128 on the top of the convex frame 3126 of the base 312 and electrically connected thereto. The carrier 330 is a thin connecting layer, and can function as an electrical connection and a structural connection, such as an anisotropic conductive film or an anisotropic conductive paste. The carrier 330 is disposed on the front surface of the cover 316. The electrode area of 3162 is on the 3166. The passive component 340 is disposed on the carrier 330, and is electrically and electrically connected to the electrode region of the cover 316 by the carrier 330. 15 200840333 In the present embodiment, the passive component 340 is disposed in the electrode region 3166 of the transparent cover 316 of the image sensor package 310, and the electrode region 3166 corresponds to the non-image of the image sensing chip 314 in the image sensor package 310. The sensing area 3146 eliminates the need to reserve space for the passive component 340 on the circuit board 320, thereby saving space and reducing the volume of the image sensor package 310 and the image capturing device 300 to which the image sensor package 310 is applied. The purpose. Referring to FIG. 5 , a fourth preferred embodiment of the image capture device of the present invention is similar to the image capture device 300 . The image capture device 400 includes an image sensor package 410 , a carrier 430 , a passive component 440 , and a lens module 460 . The image sensor package 410 includes a substrate 412, an image sensing wafer 414, and a cover 416. The base 412 includes a first surface 4122 and a second surface 4124. The first surface 4122 further defines a convex frame 4126. The convex frame 4126 and the first surface 4122 define a cavity 4127. The image sensing is performed. The wafer 414 is disposed in the cavity 4127. The image sensing chip 414 is a photosensitive element that converts the optical signal into an electrical signal. The image sensing wafer 414 has an upper surface 4142 and a lower surface 4144. The upper surface 4142 includes a sensing region 4145 and surrounds the sensing region. The image sensing wafer 414 is fixed to the base 412 through its lower surface 4144 and electrically connected to the base 412. The cover 416 includes a front surface 4162 and a rear surface 4164. The front surface 4162 of the cover further includes a non-electrode region 4165 and an electrode region 4166 surrounding the non-electrode region 4165. The non-electrode region 4165 is disposed under the cover 416. The sensing area 4145 of the image sensing chip 414 is relatively positive, the area of the non-electrode area 4165 is equal to or larger than the area of the sensing area 4145, and the electrode area 4166 of the cover 416 is provided with a plurality of conductive electrodes 4167. The cover is disposed on the convex frame 4126 of the base 412 through the edge portion of the back surface 4164 for isolating the image sensing wafer 414 from the external environment, thereby improving the reliability of the image sensing wafer 414. The carrier 430 is a thin connecting layer, and can function as an electrical connection and a structural connection, such as an anisotropic conductive film or an anisotropic conductive paste. The carrier 430 is disposed on the cover 416. On the electrode area 4166 of the front side 4162. The passive component 440 is disposed on the carrier 430, and is electrically and electrically connected to the electrode region of the cover 416 by the carrier 430. The lens module 460 includes a lens barrel 462 and a lens holder 464. The lens barrel 462 is provided with at least one set of lenses. One end of the lens barrel 462 is received at one end of the lens holder 464. The image capturing device 400 differs from the image capturing device 300 in that the image capturing device 400 further includes a circuit board 420 and a plurality of wires 450, and the circuit board 420 is provided with a patterned circuit for electrical transmission. The image sensor package 410 is structurally and electrically connected to the circuit board 420 via a second surface 4124 of the base 412. The lens module 460 is not provided with one end of the lens barrel 462 connected to the circuit. The image sensor package 410 is received on the board 420 and housed inside the device. One end of the plurality of wires 450 is connected to the electrode 4167 of the cover plate 416, and the other end is connected to the image forming circuit of the circuit board, and the passive component to be disposed on the cover plate 416 is used by 17 200840333. 440 is electrically connected to the circuit board 420. It can be understood that some electrodes may be disposed in the carrier 430 and electrically connected to the circuit board 420 through the wires 450 to electrically connect the passive component 440 to the circuit board 420. In the present embodiment, the image capturing device 400 is similar to the image capturing device 300, and the passive component 440 is disposed in the electrode region 4166 of the cover 416 of the image sensor package 410. The electrode region 4166 corresponds to the image sense, and the device package The non-image sensing area 4146 of the image sensing chip 414 in 410 eliminates the need to reserve space for the passive component 440 on the circuit board 420, thereby saving space, reducing the image sensor package 410 and applying the image sensing. The image capture device 400 of the package 410 is for the purpose of volume. Referring to FIG. 6, a fifth preferred embodiment of the image capture device of the present invention includes a circuit board 510, an image sensing chip 52A, a carrier 530, a passive component 540, a wire 550, a mirror mount 560, and a mirror. Cartridge 570. The circuit board 510 is configured to carry the image sensing chip 520 and the lens holder 560, and is provided with a patterned circuit for transmitting the sensing signal of the image sensing chip 520. The image sensing chip 520 is a photosensitive element that converts the optical signal into an electrical signal. The image sensing chip 520 has an upper surface 522 and a lower surface 524. The upper surface 522 includes a sensing region 525 and surrounds the sensing region. A non-sensing area 526 of 525 is provided with a plurality of wafer pads 527 on the non-sensing area 526. The image sensing wafer 520 is fixed to the circuit 510 via its lower surface. 18 200840333 Carrier 530 is a thin connecting layer that provides electrical and passive connections to passive components. It is mainly composed of a resin adhesive, a conductive ion, and an electrode 532 anisotropic conductive film, that is, the conductive film can be electrically conducted in one direction and insulated in other directions. The conductive particles are filled in a resin adhesive, and the electrode 532 is filled with a resin of conductive particles, wherein the resin adhesive portion can be used to provide moisture-proof, heat-resistant, insulating, and fixed passive components 540 and the carrier 530. The electrode 532 is placed and provides a certain pressing force to maintain the contact area between the particles of the electrode 532. The conductive particles are used to electrically connect the electrodes of the connector to the electrode 532 disposed in the carrier 530. The carrier 530 is disposed on the non-sensing region 526 of the upper surface 522 of the image sensing die 520. The passive component 540 is used to improve the quality of the image sensing signal transmission. The component can be an inductive component, a capacitive component, or a resistive component. The passive component 540 is disposed on the carrier 530. The passive component 540 is further provided with a plurality of electrodes. The electrode of the passive component 540 is connected to the electrode 530 in the carrier 530, and is electrically connected to the conductive particles disposed on the carrier 530. The wire 550 is used to electrically connect the image sensing chip 520 and the passive component 540 to the circuit board 510. One end of the wire 550 is connected to the die pad 527 of the image sensing die 520, and the other end is connected to the circuit board 510. The patterned circuit is used to electrically connect the image sensing chip 520 to the circuit board 510; the other end of the wire 550 is connected to the electrode of the carrier 530, and the other end is connected to the conductive line of the circuit board 510. Passive component 540 is electrically coupled to circuit board 510. The mirror housing 560 is a stepped hollow cylinder, and includes a first accommodating portion 562 19 200840333 and a second accommodating portion 564 located below and communicating with the second accommodating portion 564. The inner diameter of a receiving portion 562. The second accommodating portion 564 includes a side wall 566. The lens holder 560 is fixed on the circuit board 510 through the sidewall 566 of the second accommodating portion 564, and the image sensing chip 520 and the image sensing chip are disposed on the image sensing chip. The passive component on the 520 is housed in the second receiving portion 564. The lens barrel 570 is a mesoporous cylinder. The lens barrel 570 is provided with a filter 572 and a lens 574. One end of the lens barrel 570 is received in the first receiving portion 562 of the lens holder 560. Light can be incident on the sensing region 525 disposed on the image sensing wafer 520 through the filter 572 and the lens 574. In this embodiment, the passive component 540 is disposed on the non-sensing area 526 of the image sensing chip 520 via the carrier 530, and the space between the sensing area 525 of the image sensing chip 520 and the wafer pad 527 is fully utilized. There is no need to install additional reserved space for the passive component 540, thereby saving space and achieving the purpose of miniaturizing the image capturing device. In summary, the present invention complies with the requirements of the invention patent and submits a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above-described embodiments, and those skilled in the art will be equivalently modified or changed in accordance with the spirit of the invention. All should be included in the scope of the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view of a conventional image sensor. Figure 2 is a cross-sectional view showing a first preferred embodiment of the image pickup apparatus of the present invention. 20 200840333 FIG. 3 is a cross-sectional view showing a second preferred embodiment of the image pickup apparatus of the present invention. Figure 4 is a cross-sectional view showing a third preferred embodiment of the image pickup device of the present invention. Figure 5 is a cross-sectional view showing a fourth preferred embodiment of the image pickup apparatus of the present invention. Figure 6 is a cross-sectional view showing a fifth preferred embodiment of the image pickup apparatus of the present invention. [Main component symbol description] (conventional) image sensor package 10 base 1 support 2 image sensing wafer 3 passive component 4 transparent cover 5 cavity 6 (invention) image pickup device 100, 200, 300, 400 500 image sensor package 110, 210, 310, 410 substrate 112, 212, 312, 412 upper surface 1122 > 2122, 3122, 4122 lower surface 1124, 2124, 3124, 4124 electrical connection block 1123 conductive bump 1125 Image sensing wafers 114, 214, 314, 414, 520 upper surface 1142, 2142, 3142, 4142, 522 lower surface 1144, 2144, 3144, 4144, 524 sensing regions 1145, 2145, 3145, 4145, 525 non-sensing Area 1146, 2146, 3146, 4146, 526 Wafer Pad 1147, 527 21 200840333 Carrier 116, Electrode 1162 Passive Element 117, Conductor 118, Cover Plate 119, Lens 130 Lens Tube 132, Lens 1324 Mirror Mount 134, First Placement Part 1342 second receiving portion 1344 side wall 1346 dead material 136, convex frame 2126 cavity 2127 conductive sheet 2128 Electrical connection point 2129 (cover) front 2162 (cover) back 2164 non-electrode area 2165 electrode area 2166 conductive electrode 2167 lens module 260, circuit board 420 ^ 230, 330, 430, 530, 532 240, 340, 440 , 540 450 , 550 216 , 316 , 416 262 , 362 , 462 , 570 , 2624 , 3624 264 , 364 , 464 , 560 , 562 , 564 λ 566 266 , 366 , , 3126 , 4126 , > 3127 > 4127 , 3128, 2129, 3129, 3162, 4162, 3164, 4164, 3165, 4165, 3166, 4166, 3167, 4167 360, 460 510 22 572 200840333 Filter 574 Lens 23