JPH0530360Y2 - - Google Patents
Info
- Publication number
- JPH0530360Y2 JPH0530360Y2 JP1499688U JP1499688U JPH0530360Y2 JP H0530360 Y2 JPH0530360 Y2 JP H0530360Y2 JP 1499688 U JP1499688 U JP 1499688U JP 1499688 U JP1499688 U JP 1499688U JP H0530360 Y2 JPH0530360 Y2 JP H0530360Y2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- wiring board
- conversion element
- output terminals
- photoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229940023462 paste product Drugs 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
【考案の詳細な説明】
(イ) 産業上の利用分野
本考案は光信号を電気信号に変換したり、光エ
ネルギを電気エネルギに変換する光電変換装置に
関する。[Detailed Description of the Invention] (a) Industrial Application Field The present invention relates to a photoelectric conversion device that converts an optical signal into an electrical signal or converts optical energy into electrical energy.
(ロ) 従来の技術
透光性絶縁基板の一主面上に、膜状光電変換体
と当該光電変換体の光電変換出力を導出する複数
の出力端子を配置した光電変換素子は、例えば特
公昭58−21827号公報に太陽電池への適用例が開
示され、特開昭58−31585号公報に光センサへの
適用例が記載されている如く既に種々の用途への
展開が試みられている。(b) Prior art A photoelectric conversion element in which a film-like photoelectric converter and a plurality of output terminals for deriving the photoelectric conversion output of the photoelectric converter are arranged on one principal surface of a transparent insulating substrate is known, for example, as disclosed in Application examples to solar cells are disclosed in Japanese Patent Publication No. 58-21827, and applications to optical sensors are described in Japanese Patent Application Laid-Open No. 58-31585, and attempts have already been made to develop the technology into various uses.
これら光電変換素子の実用に際しては、一般に
周辺の電気回路と電気的に接続すると共に機械的
な固定も必要である。 When putting these photoelectric conversion elements into practical use, it is generally necessary to electrically connect them to surrounding electric circuits and to mechanically fix them.
第３図は斯る光電変換素子の実装構造を示し、
１は第１電極膜３、半導体膜４及び第２電極膜５
の積層体からなる膜状の光電変換体６を絶縁基板
２の一主面２ａ上に配置した光電変換素子、８は
該光電変換素子の他主面２ｂ側が載置され任意の
配線９ａ，９ｂ…が施された配線基板、１３ａ，
１３ｂは上記配線基端８の配線９ａ，９ｂに備え
られた入力端子１０ａ，１０ｂと上記光電変換素
子１の出力端子となる第１・第２電極３，５の延
長部３′，５′を電気的に接続するワイヤリードで
ある。斯る実装構造によれば、光電変換素子１の
出力端子となる延長部３′，５′と配線基板８の入
力端子１０ａ，１０ｂとの接続はワイヤリード１
３ａ，１３ｂを介したボンデイングにより行なわ
れていることから、当該光電変換素子１を先ず配
線基板８に載置固定した後、上記ワイヤリード１
３ａ，１３ｂのボンデイングを行なわなければな
らず作業性が低下すると共に、固着強度も欠ける
ことから信頼性も低い。更に膜状光電変換体６は
受光面側に露出するので、当該受光面を保護する
ためには透光性の保護体が要求される。 Figure 3 shows the mounting structure of such a photoelectric conversion element,
1 is a first electrode film 3, a semiconductor film 4, and a second electrode film 5
A photoelectric conversion element in which a film-like photoelectric conversion body 6 made of a laminate is arranged on one main surface 2a of an insulating substrate 2, 8 is placed on the other main surface 2b side of the photoelectric conversion element, and arbitrary wirings 9a, 9b are arranged. A wiring board 13a,
Reference numeral 13b denotes input terminals 10a, 10b provided on the wirings 9a, 9b at the wiring base end 8, and extensions 3', 5' of the first and second electrodes 3, 5, which serve as output terminals of the photoelectric conversion element 1. This is a wire lead for electrical connection. According to this mounting structure, the extensions 3', 5', which serve as output terminals of the photoelectric conversion element 1, and the input terminals 10a, 10b of the wiring board 8 are connected to each other by the wire leads 1.
3a and 13b, the photoelectric conversion element 1 is first mounted and fixed on the wiring board 8, and then the wire leads 1
3a and 13b must be bonded, which reduces workability and also reduces reliability due to lack of bonding strength. Furthermore, since the film-like photoelectric converter 6 is exposed on the light-receiving surface side, a light-transmitting protector is required to protect the light-receiving surface.
そこで第４図に示す如く絶縁基板２としてガラ
ス等の透光性材料を用いることによつて、当該絶
縁基板２を受光面とし、また光電変換体６の出力
端子７a′，７b′に予めリードピン１４ａ，１４ｂ
を固着せしめる構造の光電変換素子６が試作さ
れ、第５図のように絶縁基板２を受光面側に配し
て配線基板８の入力端子１０ａ，１０ｂの貫通孔
に上記リードピン１４ａ，１４ｂを挿入し、半田
付けする実装構造が試みられた。 Therefore, by using a transparent material such as glass as the insulating substrate 2 as shown in FIG. 14a, 14b
A photoelectric conversion element 6 having a structure for fixing is made as a prototype, and the lead pins 14a and 14b are inserted into the through holes of the input terminals 10a and 10b of the wiring board 8 with the insulating substrate 2 placed on the light-receiving surface side as shown in FIG. However, a mounting structure using soldering was attempted.
然し乍ら、斯る構造によると、リードピン１４
ａ，１４ｂは絶縁基板２と強固に接着するため
に、当該絶縁基板２の一主面に沿つて接着面積を
大ならしめるべく延出していることから配線基板
８への実装に際しては絶縁基板２よりも外側に入
力端子１０ａ，１０ｂを設けなければならず、余
分なスペースが必要となる。また、リードピン１
４ａ，１４ｂの数が多い場合には作業工数の大幅
な増大は免れない。 However, according to such a structure, the lead pin 14
a and 14b extend along one main surface of the insulating substrate 2 to increase the adhesion area in order to firmly adhere to the insulating substrate 2. Therefore, when mounting on the wiring board 8, the insulating substrate 2 Input terminals 10a and 10b must be provided outside of the input terminals, which requires extra space. Also, lead pin 1
If the number of 4a, 14b is large, the number of man-hours will inevitably increase significantly.
(ハ) 考案が解決しようとする課題
本考案は上述の如く光電変換素子の配線基板へ
の実装の際、余分なスペースを必要としたり、ま
た作業工数の大幅な増大を解決しようとするもの
である。(c) Problems to be solved by the invention As mentioned above, the invention attempts to solve the problem of the need for extra space and the significant increase in the number of work steps when mounting a photoelectric conversion element on a wiring board. be.
(ニ) 課題を解決しようとする手段
本考案は上記課題を解決するために、透光性絶
縁基板の一主面上に、膜状光電変換体と当該光電
変換体の光電変換出力を導出する複数の出力端子
を配置し、上記出力端子を光電変換体より突出せ
しめた光電変換素子と、上記出力端子と対応する
入力端子を備える配線が施された配線基板と、か
らなり、上記光電変換素子の出力端子と配線基板
の入力端子を導電性接着剤により結合することを
特徴とする。(d) Means for Solving the Problems In order to solve the above problems, the present invention uses a film-like photoelectric converter and a photoelectric conversion output of the photoelectric converter to be derived on one main surface of a transparent insulating substrate. The photoelectric conversion element comprises a photoelectric conversion element in which a plurality of output terminals are arranged and the output terminals protrude from the photoelectric conversion body, and a wiring board provided with wiring including input terminals corresponding to the output terminals, the photoelectric conversion element The output terminal of the circuit board and the input terminal of the wiring board are connected using a conductive adhesive.
(ホ) 作用
上述の如く膜状光電変換体より突出せしめた光
電変換素子の出力端子と、配線基板の入力端子を
導電性接着剤により結合することによつて、配線
基板への実装に際し光電変換素子が斯る配線基板
に占める面積は絶縁基板の面積と等しくなると共
にリードピン或いはワイヤリード等の煩雑な後付
け作業が不要となる。(E) Effect As described above, by bonding the output terminal of the photoelectric conversion element protruding from the film-like photoelectric conversion body and the input terminal of the wiring board with a conductive adhesive, photoelectric conversion can be performed when mounted on the wiring board. The area that the element occupies on the wiring board becomes equal to the area of the insulating board, and there is no need for complicated post-installation work such as lead pins or wire leads.
(ヘ) 実施例
以下第１図及び第２図を参照して本考案光電変
換装置を光センサに適用した実施例につき説明す
る。(F) Embodiment An embodiment in which the photoelectric conversion device of the present invention is applied to an optical sensor will be described below with reference to FIGS. 1 and 2.
第１図は本考案光電変換装置の実装途中の状態
を示し、１は光電変換素子であつて、ガラス等の
透光性絶縁基板２の一主面２ａ上に、SnO2、
ITO等に代表される透光性導電酸化物からなる第
１電極３、膜面に平行にpin接合、pn接合等の半
導体接合を有する例えば膜厚4000Å〜1μm程度の
アモルフアスシリコンを主体とする半導体膜４及
びアルミニウム等の金属からなる第２電極膜５の
積層体から構成される膜厚サブミクロン〜ミクロ
ンオーダの膜状光電変換体６が設けられ、斯る光
電変換体６の光電変換出力は上記第１・第２電極
膜３，５から絶縁基板２の一主面２ａに延在した
延長部分３′，５′上に第２図Ｂに示す如く金、
銀、銅等の金属粉末をエポキシ、フエノール等の
樹脂に混入した導電性ペーストを熱硬化した出力
端子７ａ，７ｂから導出される。８は任意の配線
９ａ，９ｂが施された配線基板で、本考案でいう
配線基板とは通常のガラスエポキシからなるプリ
ント配線基板、ポリエステル、ポリイミド等の高
分子材料からなるフレキシブル配線基板、更には
リードフレーム等を含む。１０ａ，１０ｂは上記
配線基板８の特定の配線９ａ，９ｂに一体的に設
けられた入力端子で、実装される光電変換素子１
の出力端子７ａ，７ｂと対応している。１１ａ，
１１ｂは斯る光電変換素子１の出力端子７ａ，７
ｂ上に第２図Ｃに示す如く予め配置された導電性
接着剤で、例えば半田からなり、融点が光電変換
素子１や配線基板８の構成要素に熱的損傷を与え
ることのないような低融点なものが利用される。 FIG. 1 shows a state in which the photoelectric conversion device of the present invention is being mounted, and 1 is a photoelectric conversion element, and on one main surface 2a of a transparent insulating substrate 2 such as glass, SnO 2 ,
The first electrode 3 is made of a transparent conductive oxide such as ITO, and is mainly made of amorphous silicon with a film thickness of about 4000 Å to 1 μm, with a semiconductor junction such as a pin junction or a pn junction parallel to the film surface. A film-like photoelectric converter 6 having a film thickness on the order of submicrons to microns is provided, which is composed of a laminate of a semiconductor film 4 and a second electrode film 5 made of a metal such as aluminum, and the photoelectric conversion output of the photoelectric converter 6 is As shown in FIG. 2B, gold,
It is led out from output terminals 7a and 7b made by thermosetting a conductive paste in which metal powder such as silver or copper is mixed with resin such as epoxy or phenol. Reference numeral 8 denotes a wiring board on which arbitrary wirings 9a and 9b are provided, and the wiring board in the present invention includes a printed wiring board made of ordinary glass epoxy, a flexible wiring board made of a polymeric material such as polyester or polyimide, and Including lead frames etc. Reference numerals 10a and 10b are input terminals provided integrally with specific wirings 9a and 9b of the wiring board 8, and the photoelectric conversion elements 1 to be mounted are input terminals 10a and 10b.
The output terminals 7a and 7b correspond to the output terminals 7a and 7b. 11a,
11b is the output terminal 7a, 7 of the photoelectric conversion element 1.
A conductive adhesive, for example made of solder, is placed in advance as shown in FIG. Those with a melting point are used.
而して、透光性絶縁基板２の一主面２ａ上に膜
状光電変換体６を形成した光電変換素子１の半完
成品を第２図Ａの如く用意する。この半完成品の
状態では透光性絶縁基板２は第１図のように各個
別の光電変換素子１毎に細分化されることなく大
きな共通の絶縁基板状態にあり、従つて、多数の
光電変換素子１が共通の絶縁基板上に形成されて
いる。次いで第２図Ｂの如く光電変換素子１の出
力端子７ａ，７ｂを形成すべく第１・第２電極膜
３，５の延長部分３′，５′上に導電性ペーストが
所望形状にスクリーン印刷により膜厚数10μm〜
数100μm程度塗布され熱硬化される。従つて、当
該出力端子７ａ，７ｂは光電変換体６より突出す
ることになる。上記導電性ペーストは例えば三井
金属鉱業株式会社から販売されている銅ペースト
品番Ｓ−5000が用いられ、斯るペーストは硬化温
度が約150〜160℃と低温であるために、光電変換
素子１の構成要素に熱的損傷を与えることもな
い。 Thus, a semi-finished product of the photoelectric conversion element 1 in which the film-like photoelectric conversion body 6 is formed on one principal surface 2a of the light-transmitting insulating substrate 2 is prepared as shown in FIG. 2A. In this semi-finished product state, the translucent insulating substrate 2 is not subdivided into individual photoelectric conversion elements 1 as shown in FIG. A conversion element 1 is formed on a common insulating substrate. Next, as shown in FIG. 2B, a conductive paste is screen printed in a desired shape on the extended portions 3' and 5' of the first and second electrode films 3 and 5 to form the output terminals 7a and 7b of the photoelectric conversion element 1. Film thickness of several 10 μm or more
It is applied to a thickness of several 100 μm and cured by heat. Therefore, the output terminals 7a and 7b protrude from the photoelectric converter 6. As the conductive paste, for example, copper paste product number S-5000 sold by Mitsui Kinzoku Mining Co., Ltd. is used, and since such a paste has a low curing temperature of approximately 150 to 160°C, it There is no thermal damage to the components.
第２図Ｃでは上記導電性ペーストの出力端子７
ａ，７ｂ上にクリーム状の低融点半田が同じくス
クリーン印刷により膜厚数100μm〜数mm程度塗布
され、塗布後約150〜170℃程度に加熱しクリーム
状の低融点半田を固相状態にした導電性接着剤１
１ａ，１１ｂが予め形成される。このようにスク
リーン印刷により所望形状にパターニングするこ
とのできるクリーム状の低融点半田は例えば株式
会社日本スペリア社からビスマス入り低融点半田
クリーム品番Ｓ−9313として販売されている。即
ち、導電性接着剤１１ａ，１１ｂはスクリーン印
刷により所定箇所に形成できるために個々の接着
部位にデイプする必要がなく、従つて先の出力端
子７ａ，７ｂの導電性ペーストと共に、本実施例
のように一対の端子数ではなく多数の端子数であ
つても煩雑な作業を伴なわない。 In Figure 2C, the output terminal 7 of the conductive paste
A creamy low melting point solder was applied on a and 7b with a thickness of several 100 μm to several mm by screen printing, and after application, the creamy low melting point solder was heated to about 150 to 170°C to turn it into a solid state. Conductive adhesive 1
1a and 11b are formed in advance. A creamy low melting point solder that can be patterned into a desired shape by screen printing is sold, for example, by Nippon Superior Co., Ltd. as a bismuth-containing low melting solder cream product number S-9313. That is, since the conductive adhesives 11a and 11b can be formed at predetermined locations by screen printing, there is no need to dip them into individual adhesive locations. Thus, even if there are a large number of terminals instead of a pair of terminals, no complicated work is involved.
このようにして予め導電性接着剤１１ａ，１１
ｂが設けられた光電変換素子１を共通の絶縁基板
から個々のチツプに分割し、第２図Ｄのように配
線基板８の入力端子１０ａ，１０ｂ上に光電変換
素子１側に設けられた導電性接着剤１１ａ，１１
ｂを当接した状態で、当該光電変換素子１を配線
基板８上に載置し、この状態で約150〜170℃の温
度まで加熱すると、上記固相状態にあつた導電性
接着剤１１ａ，１１ｂは一旦溶融（リフロー）し
温度低下に伴なつて固化して、出力端子７ａ，７
ｂと入力端子１０ａ，１０ｂとを電気的に結合す
る（第２図Ｅ）。このとき、導電性接着剤１１ａ，
１１ｂは入・出力端子１０ａ，７ａ，１０ｂ，７
ｂを強固に結合することから、光電変換素子１の
配線基板８への固着も同時に行なわれることにな
る。 In this way, the conductive adhesives 11a, 11
The photoelectric conversion element 1 provided with the photoelectric conversion element 1 is divided into individual chips from a common insulating substrate, and conductive chips provided on the photoelectric conversion element 1 side are placed on the input terminals 10a and 10b of the wiring board 8 as shown in FIG. 2D. adhesive 11a, 11
When the photoelectric conversion element 1 is placed on the wiring board 8 in a state where it is in contact with b and heated to a temperature of about 150 to 170°C, the conductive adhesive 11a in the solid phase state, 11b is once melted (reflowed) and solidified as the temperature decreases to form the output terminals 7a, 7.
b and the input terminals 10a, 10b are electrically coupled (FIG. 2E). At this time, the conductive adhesive 11a,
11b is the input/output terminal 10a, 7a, 10b, 7
Since b is firmly coupled, the photoelectric conversion element 1 is also fixed to the wiring board 8 at the same time.
このようにして、配線基板８に光電変換素子１
が導電性接着剤１１ａ，１１ｂを介して実装され
ると、光電変換体６の光入射面側には透光性絶縁
基板２が存在することになり、上記光電変換体６
に対する保護体として作用する。更に光電変換体
６の背面側は、出力端子７ａ，７ｂが当該光電変
換体６より突出すると共に導電性接着剤１１ａ，
１１ｂの存在により配線基板８との間に間隙を形
成されることから非接触となる。また斯る間隙に
は第２図Ｅにおいて破線で示す如く樹脂１２を充
填し、確実な保護を行なつても良い。 In this way, the photoelectric conversion element 1 is attached to the wiring board 8.
is mounted via conductive adhesives 11a and 11b, the light-transmitting insulating substrate 2 is present on the light incident surface side of the photoelectric converter 6, and the photoelectric converter 6
acts as a protector against Further, on the back side of the photoelectric converter 6, output terminals 7a, 7b protrude from the photoelectric converter 6, and conductive adhesives 11a,
Due to the presence of 11b, a gap is formed between the wiring board 8 and the wiring board 8, so that there is no contact. Further, such a gap may be filled with resin 12 as shown by the broken line in FIG. 2E for reliable protection.
尚、以上の実施例にあつては光電変換体６は一
対の出力端子７ａ，７ｂを備えるに止まつたが、
光検出部をライン状に並置した所謂ラインセンサ
のように多数対の出力端子を備えたものであつて
も良く、更に太陽電池であつても良いことは自明
である。(ト) 考案の効果
本考案光電変換装置は以上の説明から明らかな
如く、配線基板への実装に際し光電変換素子が斯
る配線基板に占める面積は絶縁基板の面積と等し
くなると共に、リードピン或いはワイヤリード等
の煩雑な後付け作業が不要となるので、最小の実
装面積となり集積度の向上が図れるばかりか、生
産性も上昇する。 Incidentally, in the above embodiment, the photoelectric converter 6 was only provided with a pair of output terminals 7a and 7b; however,
It is obvious that the sensor may be equipped with many pairs of output terminals, such as a so-called line sensor in which photodetectors are arranged side by side in a line, or it may be a solar cell. (g) Effects of the invention As is clear from the above description, when the photoelectric conversion device of the invention is mounted on a wiring board, the area occupied by the photoelectric conversion element on the wiring board is equal to the area of the insulating board, and the lead pin or wire Since complicated post-installation work such as leads is not required, the mounting area is minimized, which not only improves the degree of integration but also increases productivity.
第１図及び第２図は本考案の一実施例を示し、
第１図は実装途中の状態を示す斜視図、第２図Ａ
乃至第２図Ｅは実装工程を順次説明するための第
１図におけるＸ−X′線断面に相当する断面図、
第３図乃至第５図は従来例を示す断面図である。
１……光電変換素子、２……絶縁基板、６……
膜状光電変換体、７ａ，７ｂ……出力端子、８…
…配線基板、９ａ，９ｂ……配線、１０ａ，１０
ｂ……入力端子、１１ａ，１１ｂ……導電性接着
剤。
1 and 2 show an embodiment of the present invention,
Figure 1 is a perspective view showing the state in the middle of mounting, Figure 2A
2 to 2E are cross-sectional views corresponding to the cross section taken along the line X-X' in FIG. 1 for sequentially explaining the mounting process;
3 to 5 are cross-sectional views showing conventional examples. 1...Photoelectric conversion element, 2...Insulating substrate, 6...
Membrane photoelectric converter, 7a, 7b...output terminal, 8...
...Wiring board, 9a, 9b...Wiring, 10a, 10
b...Input terminal, 11a, 11b...Conductive adhesive.
Claims (1)
と当該光電変換体の光電変換出力を導出する複数
の出力端子を配置し、上記出力端子を光電変換体
より突出せしめた光電変換素子と、上記出力端子
と対応する入力端子を備える配線が施された配線
基板と、からなり、上記光電変換素子の出力端子
と配線基板の入力端子を導電性接着剤により結合
することを特徴とした光電変換装置。 A photoelectric conversion device in which a film-like photoelectric converter and a plurality of output terminals for deriving the photoelectric conversion output of the photoelectric converter are arranged on one main surface of a transparent insulating substrate, and the output terminals are made to protrude from the photoelectric converter. and a wiring board provided with wiring including input terminals corresponding to the output terminals, and characterized in that the output terminals of the photoelectric conversion elements and the input terminals of the wiring board are bonded using a conductive adhesive. photoelectric conversion device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1499688U JPH0530360Y2 (en) | 1988-02-05 | 1988-02-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1499688U JPH0530360Y2 (en) | 1988-02-05 | 1988-02-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01120335U JPH01120335U (en) | 1989-08-15 |
| JPH0530360Y2 true JPH0530360Y2 (en) | 1993-08-03 |
Family
ID=31226664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1499688U Expired - Lifetime JPH0530360Y2 (en) | 1988-02-05 | 1988-02-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0530360Y2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4802907B2 (en) * | 2006-07-25 | 2011-10-26 | パナソニック株式会社 | Semiconductor mounting structure |
| JP5252472B2 (en) * | 2007-09-28 | 2013-07-31 | シャープ株式会社 | Solar cell, method for manufacturing solar cell, method for manufacturing solar cell module, and solar cell module |
| JP5154516B2 (en) * | 2009-05-22 | 2013-02-27 | シャープ株式会社 | Solar cell module and method for manufacturing solar cell module |
| JP5576957B2 (en) * | 2013-04-01 | 2014-08-20 | シャープ株式会社 | Solar cell module |
| JP2014160865A (en) * | 2014-05-09 | 2014-09-04 | Sharp Corp | Solar battery module |
-
1988
- 1988-02-05 JP JP1499688U patent/JPH0530360Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01120335U (en) | 1989-08-15 |
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