JPH0325730B2 - - Google Patents
Info
- Publication number
- JPH0325730B2 JPH0325730B2 JP8030881A JP8030881A JPH0325730B2 JP H0325730 B2 JPH0325730 B2 JP H0325730B2 JP 8030881 A JP8030881 A JP 8030881A JP 8030881 A JP8030881 A JP 8030881A JP H0325730 B2 JPH0325730 B2 JP H0325730B2
- Authority
- JP
- Japan
- Prior art keywords
- processing circuit
- signal processing
- infrared
- circuit board
- infrared detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000009795 derivation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
【発明の詳細な説明】
本発明は赤外線検知装置とくに赤外線検知素子
と信号処理回路とを一体化した二次元赤外線検知
装置の構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an infrared detection device, and particularly to the structure of a two-dimensional infrared detection device that integrates an infrared detection element and a signal processing circuit.
以下の説明には光起電力型赤外線検知素子を用
いた二次元赤外線検知装置を例に説明する。この
ような赤外線領域で動作する光電変換素子、すな
わち赤外線検知素子と該赤外線検知素子の信号を
処理する増幅器等の信号処理回路とを一体化する
場合、第１図に示すようにSi基板１の主表面に上
記信号処理回路を設け、該Si基板１の１側端面２
に赤外線検知素子３を設けた基板４を添着した構
成体１０を構成し、この構成体１０を複数個積層
して、二次元赤外線検知装置２０を形成してい
た。このような構成の二次元赤外線検知装置２０
においては、赤外線素子３の受光面側に設けた電
極５と信号処理回路の入力端子６との接続のため
ワイヤボンデイング等の方法を用いなければなら
ず積層された構成体１０の中間層１０−１の信号
処理回路と該信号処理回路につながる検知素子３
の電極５との接続が困難で、装置を小型化できな
いという欠点があつた。 In the following explanation, a two-dimensional infrared detection device using a photovoltaic infrared detection element will be explained as an example. When integrating such a photoelectric conversion element that operates in the infrared region, that is, an infrared detection element, and a signal processing circuit such as an amplifier that processes the signal of the infrared detection element, a Si substrate 1 is used as shown in FIG. The above-mentioned signal processing circuit is provided on the main surface, and one end surface 2 of the Si substrate 1 is provided.
A two-dimensional infrared detecting device 20 was formed by laminating a plurality of these constructs 10 together with a substrate 4 on which an infrared detecting element 3 was attached. Two-dimensional infrared detection device 20 with such a configuration
In this case, a method such as wire bonding must be used to connect the electrode 5 provided on the light-receiving surface side of the infrared element 3 to the input terminal 6 of the signal processing circuit. 1 signal processing circuit and a detection element 3 connected to the signal processing circuit
However, it is difficult to connect the electrode 5 to the electrode 5, and the device cannot be miniaturized.
本発明は上記欠点を除去するもので、その要旨
は、赤外線検知素子を設けた基板を、該赤外線検
知素子からの出力を処理する信号処理回路基板の
一側端面に添着して構成体を構成し、かつ該構成
体に取付けた前記赤外線検知素子の受光面がほぼ
同一面内になるよう前記構成体を複数個積層した
モザイク型二次元赤外線検知装置において、前記
赤外線検知素子の受光面が前記構成体の主表面と
鈍角になるよう構成するとともに、受光面に設け
た電極を前記信号処理回路基板の入力端子に接続
し、かつ信号処理回路からの出力信号を導出する
端子を前記積層された他の構成体の信号出力端子
に接続したことを特徴とするモザイク型二次元赤
外線検知装置を提供する。 The present invention aims to eliminate the above-mentioned drawbacks, and its gist is to form a structure by attaching a substrate provided with an infrared sensing element to one side end surface of a signal processing circuit board that processes the output from the infrared sensing element. and a mosaic-type two-dimensional infrared sensing device in which a plurality of the structures are stacked so that the light-receiving surfaces of the infrared sensing elements attached to the structure are substantially in the same plane. The electrode provided on the light-receiving surface is connected to the input terminal of the signal processing circuit board, and the terminal for deriving the output signal from the signal processing circuit board is connected to the laminated board so as to form an obtuse angle with the main surface of the structure. A mosaic type two-dimensional infrared detection device is provided, which is characterized in that it is connected to a signal output terminal of another component.
以下図面を参照しながら本発明のモザイク型二
次元赤外線検知装置について製造工程順に図面を
参照しながら説明する。なお各図において同一機
能部については同一記号を用いて説明する。 DESCRIPTION OF THE PREFERRED EMBODIMENTS The mosaic type two-dimensional infrared detecting device of the present invention will be described below in the order of manufacturing steps with reference to the drawings. Note that in each figure, the same functional parts will be explained using the same symbols.
第２図は本発明の信号処理回路を設けた回路基
板である。本実施例においては回路基板として信
号処理回路として製作容易なSi基板を用いてい
る。 FIG. 2 shows a circuit board provided with the signal processing circuit of the present invention. In this embodiment, a Si substrate, which is easy to manufacture, is used as the circuit board for the signal processing circuit.
図において７は回路基板、８は信号処理回路
（図示しない）からの出力信号を導出する端子で、
その先端には積層する相手の回路基板７の裏側に
設けた信号導出端子９と接続するボンデイングパ
ツド１１が設けてある。なお１２もまた相手のボ
ンデイングパツド１１と接続されるボンデイング
パツドを示す。１３は赤外線検知素子からの信号
を信号処理回路に導入する端子部を示す。 In the figure, 7 is a circuit board, 8 is a terminal for deriving an output signal from a signal processing circuit (not shown),
A bonding pad 11 is provided at the tip thereof to be connected to a signal lead-out terminal 9 provided on the back side of the circuit board 7 to be laminated. Note that 12 also indicates a bonding pad that is connected to the mating bonding pad 11. Reference numeral 13 indicates a terminal portion for introducing a signal from the infrared detection element into the signal processing circuit.
また第３図において１４は赤外線検知素子を設
けた基板で、HgCdTe等の多元半導体から構成さ
れる。この検知素子はあらかじめ傾斜面を設けた
基板１４の傾斜面１６に設けられる。１５は検知
素子のPN接合部を示す。この基板の傾斜面１６
に赤外線検知素子が回路基板７の信号処理回路に
対応した位置関係になるよう１個または直線状に
複数個設けてある。１７は絶縁膜、１８は検知素
子の受光面側に設けた電極を示す。この傾斜面１
６が受光面となる。 Further, in FIG. 3, reference numeral 14 denotes a substrate provided with an infrared detection element, which is made of a multi-component semiconductor such as HgCdTe. This sensing element is provided on an inclined surface 16 of a substrate 14 which has been provided with an inclined surface in advance. 15 indicates the PN junction of the sensing element. The inclined surface 16 of this substrate
One or a plurality of infrared detecting elements are provided in a linear manner so as to have a positional relationship corresponding to the signal processing circuit of the circuit board 7. Reference numeral 17 indicates an insulating film, and reference numeral 18 indicates an electrode provided on the light-receiving surface side of the sensing element. This slope 1
6 is the light receiving surface.
この赤外線検知素子を設けた基板１４の端面１
９と回路基板７の一端側面２１とを接着するが、
このとき回路基板７の信号処理回路を設けた主表
面２２と受光面となる傾斜面１６とのなす角が鈍
角θとなるよう接続することが重要である。 End surface 1 of the substrate 14 provided with this infrared sensing element
9 and one end side surface 21 of the circuit board 7 are glued together.
At this time, it is important to connect the circuit board 7 so that the main surface 22 on which the signal processing circuit is provided and the inclined surface 16 serving as the light receiving surface form an obtuse angle θ.
以上のようにして構成体１０を構成し、この構
成体１０の主表面２２側の接続部に第４図に示す
ように絶縁膜２３を設け、その後信号処理回路の
入力端子１３と検知素子の受光面側に設けた電極
１８とが接続されるよう蒸着にて配線２４を設け
る。 The structure 10 is constructed as described above, and the insulating film 23 is provided at the connection part on the main surface 22 side of the structure 10 as shown in FIG. 4, and then the input terminal 13 of the signal processing circuit and the detection element are A wiring 24 is provided by vapor deposition so as to be connected to the electrode 18 provided on the light receiving surface side.
以上のように構成して構成体１０を完成し、該
構成体１０の検知素子の受光面がほぼ同一面内に
なるよう各構成体１０を積層してモザイク型二次
元赤外線検知装置３０を第５図ａのように構成す
る。この図において２５は各素子からの出力を共
通接続したボンデイング線を示す。 The structure 10 is completed by configuring as described above, and the mosaic type two-dimensional infrared detecting device 30 is constructed by stacking each structure 10 so that the light receiving surfaces of the detection elements of the structure 10 are substantially in the same plane. It is configured as shown in Figure 5a. In this figure, 25 indicates a bonding line that commonly connects the outputs from each element.
この検知装置３０を構成する各構成体１０の信
号出力端子９と信号処理回路からの出力信号を導
出する端子８との接続の状況を第５図ｂに示す。
なお第５図ｂは第５図ａの構成体１０のうちイと
ロのＰ部の側面の拡大図である。 FIG. 5b shows the state of connection between the signal output terminal 9 of each component 10 constituting this detection device 30 and the terminal 8 for deriving the output signal from the signal processing circuit.
Note that FIG. 5b is an enlarged side view of the P portions A and B of the structure 10 of FIG. 5A.
以上説明したような本実施例構成のモザイク型
二次元検知装置を製作すれば検知素子の受光面を
ほぼ同一面内に構成でき、かつ検知素子の受光面
側に設けた電極と信号処理回路への入力端子間の
接続を蒸着等にて作成しても断線のおそれがなく
製造が容易となると共に小型化した高い信頼性を
有する赤外線検知装置を容易に作成することがで
きる。 By manufacturing a mosaic-type two-dimensional detection device having the configuration of this embodiment as described above, the light-receiving surfaces of the sensing elements can be configured in almost the same plane, and the electrodes provided on the light-receiving surface side of the sensing element and the signal processing circuit can be Even if the connection between the input terminals is made by vapor deposition or the like, there is no risk of disconnection, and manufacturing is easy, and an infrared detection device that is compact and highly reliable can be easily created.
第１図は従来の二次元赤外線検知装置を示す斜
視図、第２図は本発明の信号処理回路を設けた回
路基板を示す概略斜視図、第３図および第４図は
本発明の構成体の概略を示す側面図、第５図ａは
本発明のモザイク型二次元赤外線検知装置の概略
を示す斜視図、第５図ｂは構成体１０のうちイと
ロの信号導出電極の接続部を説明する概略図であ
る。
１：Si基板、２：Si基板の１側端面、３：赤外
線検知素子、４：基板、５：受光面側に設けた電
極、６：信号処理回路の入力端子、７：回路基
板、８：出力信号導出端子、９：信号導出端子、
１０：構成体、１１，１２：ボンデイングパツ
ド、１３：端子部、１４：赤外線検知素子を設け
た基板、１５：PN接合部、１６：傾斜面、１
７：絶縁膜、１８：検知素子の受光面側に設けた
電極、１９：基板１４の端面、２０：二次元赤外
線検知装置、２１：回路基板７の一端側面、２
２：主表面、２３：絶縁膜、２４：配線、２５：
ボンデイング線、３０：モザイク型二次元検知装
置。
FIG. 1 is a perspective view showing a conventional two-dimensional infrared detection device, FIG. 2 is a schematic perspective view showing a circuit board provided with the signal processing circuit of the present invention, and FIGS. 3 and 4 are structures of the present invention. FIG. 5a is a perspective view schematically showing the mosaic type two-dimensional infrared detecting device of the present invention, and FIG. It is a schematic diagram for explaining. 1: Si substrate, 2: 1 side end surface of Si substrate, 3: Infrared sensing element, 4: Substrate, 5: Electrode provided on light receiving surface side, 6: Input terminal of signal processing circuit, 7: Circuit board, 8: Output signal derivation terminal, 9: Signal derivation terminal,
10: Structure, 11, 12: Bonding pad, 13: Terminal section, 14: Substrate provided with infrared sensing element, 15: PN joint section, 16: Slanted surface, 1
7: Insulating film, 18: Electrode provided on the light-receiving surface side of the detection element, 19: End surface of substrate 14, 20: Two-dimensional infrared detection device, 21: One end side surface of circuit board 7, 2
2: Main surface, 23: Insulating film, 24: Wiring, 25:
Bonding line, 30: Mosaic type two-dimensional detection device.
Claims (1)
線検知素子からの出力を処理する信号処理回路基
板７の一側端面に添着して構成体１０を構成し、
かつ該構成体に取付けた前記赤外線検知素子の受
光面がほぼ同一面内になるよう前記構成体を複数
個積層したモザイク型二次元赤外線検知装置にお
いて、 前記赤外線検知素子の受光面が前記構成体１０
の主表面と鈍角になるよう構成するとともに、受
光面に設けた電極１８を前記信号処理回路基板７
の入力端子１３に接続し、かつ信号処理回路から
の出力信号を導出する端子８を前記積層された他
の構成体の信号出力端子９に接続したことを特徴
とするモザイク型二次元赤外線検知装置。[Claims] 1. A structure 10 is constructed by attaching a substrate 14 provided with an infrared detection element to one end surface of a signal processing circuit board 7 that processes the output from the infrared detection element,
and a mosaic-type two-dimensional infrared sensing device in which a plurality of the structures are stacked so that the light-receiving surfaces of the infrared detecting elements attached to the structure are substantially in the same plane, 10
The electrode 18 provided on the light receiving surface is arranged at an obtuse angle with the main surface of the signal processing circuit board 7.
A mosaic type two-dimensional infrared detection device characterized in that a terminal 8 for deriving an output signal from the signal processing circuit is connected to an input terminal 13 of the signal processing circuit and a signal output terminal 9 of the other laminated structure. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8030881A JPS57194323A (en) | 1981-05-25 | 1981-05-25 | Mosaic type two-dimensional infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8030881A JPS57194323A (en) | 1981-05-25 | 1981-05-25 | Mosaic type two-dimensional infrared detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57194323A JPS57194323A (en) | 1982-11-29 |
| JPH0325730B2 true JPH0325730B2 (en) | 1991-04-08 |
Family
ID=13714638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8030881A Granted JPS57194323A (en) | 1981-05-25 | 1981-05-25 | Mosaic type two-dimensional infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57194323A (en) |
-
1981
- 1981-05-25 JP JP8030881A patent/JPS57194323A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57194323A (en) | 1982-11-29 |
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