JPS63271969A - Solid-state image sensor - Google Patents

Abstract

PURPOSE:To prevent a bonded surface from lifting by a method wherein an optical component, which is provided with a chamfer on the upper and the peripheral surface of the main body, and sealing resin applied onto the peripheral surface are provided, where the internal stress, which is induced when sealing resin shrinks, is guided to act obliquely downward toward a semiconductor chip. CONSTITUTION:An optical component 19 is bonded to the surface of a semiconductor chip 12 and a chamfer 22, which is provided on the area of the optical component 19, is extending from an upper surface 20, on which a light ray is incident, on an opposite side of the semiconductor chip 12 downward to a part or the whole of a peripheral surface 21. And, the semiconductor chip 12 and the optical component 19 are bonded along the peripheral face with a sealing resin 24, where the internal stress induced owing to shrinkage of the sealing resin 24 can be directed to act obliquely downward, that is, in the direction of an arrow B. By these processes, an action which presses the optical component 19 against the semiconductor 12 can be obtained, so that a bonded surface can be prevented from lifting.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solid-state image sensor, and particularly to a mounting configuration.

[Prior art]

Currently, solid-state imaging devices that use charge transfer devices such as COD and BBD, and devices that use MOS transistors are widely known. Further, these solid-state image sensing devices have drawbacks such as charge leakage during charge transfer, low light detection, and difficulty in increasing the degree of integration.

Static induction transistors are designed to solve this problem all at once.
A number of solid-state imaging devices using a rans-istor (abbreviated as 5IT) have also been proposed.

The above-mentioned solid-state image sensor can be used for still cameras, electronic cameras, V
Widely used in TR cameras and automatic analysis devices. For solid-state image sensors, there is a demand for miniaturization of the device itself due to improvements in pixel density and packaging density.For example, VT
An all-in-one VTR camera that combines an R deck and a camera.

In 8W VTR cameras, endoscopes (electronic scopes) using solid-state image sensors, and the like, there is a strong demand for miniaturization, as with other electronic and functional components, in order to miniaturize the devices. Therefore, in line with these various demands, development of miniaturization, such as chip size and pancage size, is progressing. Recently, in order to meet the above requirements, there has been a device as shown in FIG. 6 in which a semiconductor chip is provided on a substrate such as ceramic, and an optical member is bonded to the surface of this semiconductor chip.

FIG. 6 is a cross-sectional view showing an example of a conventional solid-state image sensor 71. A semiconductor chip 72 on which a photoelectric conversion section, peripheral circuits, etc. are formed is die-bonded to a base body 73 made of ceramic or the like. A bonding wire 75 connects a pattern (not shown) formed on the surface of the semiconductor chip 72 and a wiring pattern (not shown) extending from a lead pattern 74 formed on the side surface of the base 73. An optical member 76 such as a transparent plate such as glass or a color filter for surface protection is adhered to the surface of the semiconductor chip 72 . Further, in order to protect the semiconductor chip 72 and the bonding wires 75, the semiconductor chip 72 and the optical member 76 are bonded and sealed along the outer peripheral surfaces thereof with a sealing resin 77.

[Problems to be Solved by the Invention] In the conventional solid-state imaging device 71 described above, the sealing resin 7
7 contracts in the direction of the arrow A due to changes over time. There is a problem in that the optical member 76 gradually rises from the surface of the semiconductor chip 72 and peels off due to the internal stress of the sealing resin 77 that occurs during this contraction. This is due to the internal stress of the sealing resin 77, and the above-mentioned drawback can be solved by botting with a sealing resin that has less internal stress.

However, this sealing resin with low internal stress has a disadvantage in that its adhesive strength is weak, resulting in extremely poor moisture resistance after botting sealing.

This invention was made to solve the above-mentioned problems with conventional solid-state image sensors, and optical components on semiconductor chips do not peel off even when bonded with a sealing resin with excellent moisture resistance and high adhesive strength. The purpose of the present invention is to provide a solid-state image sensor that does not

[Means and effects for solving the problems] The present invention provides a solid-state imaging device in which an optical member is bonded to the surface of a semiconductor chip, in which at least a portion of the outer peripheral surface of the optical member is chamfered from the upper surface side. This is a solid-state image sensor characterized by: With this configuration, the direction of internal stress due to contraction of the sealing resin is directed diagonally downward, thereby preventing the optical member from being pressed against the semiconductor chip and lifting the adhesive surface.

〔Example〕

Hereinafter, the present invention will be explained based on examples.

FIG. 1(A) shows the first solid-state image sensor according to the present invention.
1A and 1B, the solid-state image sensor 11 is a conventional example. Device configurations shown: CCD, BBD, MO3I-transistor.

SIT etc. are used. The semiconductor chip 12 on which these photoelectric conversion functional parts and/or peripheral functional circuits, such as shift registers, drive circuits such as clock pulse generation circuits, amplifier circuits, etc. (none of which are shown) are formed, is located in the shape of a concave portion of the base 13. It is provided almost at the center of the recessed part 14. The base 13 is an LCC (leadless chip carrier) and is made of glass-filled epoxy resin, ceramic, or the like. A wiring pattern (not shown) is formed on the side surface of the base 13, and the lead pattern 15 extends to the upper surface 16 of the base 13 to form a wiring pattern (not shown). is formed.

This wiring pattern and a wiring pattern (not shown) formed on the surface 17 of the semiconductor chip 12 are connected by bonding wires 18. An optical member 19 made of a transparent plate such as glass or a color filter for protecting the surface of the semiconductor chip 12 is adhered to the surface 17 . This optical member 19 receives light from an upper surface 20 on the opposite side of the semiconductor chip 12 .

A chamfered portion 22 is formed downwardly over part or all of the outer circumferential surface 21 . This chamfered portion 22
is the thickness t1 of the optical member 19, the amount of chamfering tc, and the chamfering angle θ, the following relationship is obtained.

The chamfering angle θ is preferably in the range of approximately 40°≦θ≦80″, but when θ>80°, the downward effect of internal stress due to contraction of the sealing resin, which will be described later, as shown in arrow direction B becomes weak. Furthermore, when θ<40°, the effective light receiving area of the optical member 19 becomes smaller.Furthermore,
Chamfering NtC is preferably approximately 0.3t≦tc≦0.9t, and when tc<0.3t, the above effect is weakened, and tc
>0. gt, the ridge NlA2 on the lower surface side of the optical member 19
3 may become an edge and easily cause a crank.

In order to protect the semiconductor chip 12 and the bonding wires 18, a sealing resin 2 made of, for example, epoxy resin is applied along the outer peripheral surfaces of the semiconductor chip 12 and the optical member 19.
Botted with 4.

According to this embodiment, the direction of the internal stress due to the contraction of the sealing resin 24 can be directed diagonally downward as shown in the direction of the arrow, so that the effect of pressing the optical member 19 against the semiconductor chip 12 is provided. This prevents the adhesive surface from lifting up.

Next, another embodiment of the solid-state image sensing device according to the present invention will be described. In the following embodiments, members having the same functions as those in the first embodiment will be denoted by the same reference numerals, and their explanations will be omitted.

FIG. 2 is a sectional view showing a second embodiment of the solid-state imaging device according to the present invention. In this embodiment, the chamfered portion 22 of the optical member 19 of the first embodiment is modified.
In the figure, a chamfered portion 32 is formed in the optical member 19 over part or all of its outer circumferential surface 31 downward from the upper surface 20 on the side opposite to the semiconductor chip 12 where light is incident. This chamfered portion 32 is formed with a convex curved surface.

According to this embodiment, the same effect as the first embodiment described above is obtained, and since the chamfered portion 32 has a substantially arc shape, the internal stress generated when the sealing resin 24 contracts is transferred to the semiconductor chip 12. The average distribution can be distributed downwardly.

FIG. 3 is a sectional view showing a third embodiment of the solid-state image sensing device according to the present invention. In this embodiment, the chamfered portion 22 of the optical member 19 of the first embodiment is modified. In FIG. , its outer peripheral surface 4
A chamfered portion 42 is formed over a part or all of 1.

The chamfered portion 42 is formed of a concave curved surface.

According to this embodiment, the above first. The same effects as in the second embodiment can be obtained.

FIGS. 4 and 5 are cross-sectional views respectively showing further fourth and fifth embodiments of the solid-state imaging device according to the present invention. In these embodiments, the shape of the base body is changed, and the same optical members as in the first embodiment are used.

In FIG. 4, a lead pattern (
(not shown) is formed, and external leads 52 are connected to this lead pattern. This external lead 52 is inserted into a wiring hole (through hole) provided in a printed circuit board and soldered, or inserted into an IC socket to make a predetermined electrical connection.

According to this embodiment, in addition to the effects of the first embodiment described above, the scope of application of the solid-state image sensor 11 to printed circuit boards and the like is expanded.

In FIG. 5, this embodiment is a PGA (pin grid array) type in which pins 62 are provided on a base 61 made of glass-filled epoxy resin, ceramic, or the like. This embodiment obtains the same application and effect as the fourth embodiment described above.

The present invention is not limited to the various embodiments described above, and can be modified or modified in many ways.
It is not limited to a so-called matrix array, and may be a line-shaped solid-state image sensor in which pixels are arranged in a line.

Furthermore, it may be used as a single photoelectric conversion element.

In addition, regarding the relationship between the shapes of the semiconductor chip and the optical member, shapes such as approximately circular, rectangular, polygonal, etc. may be appropriately combined as necessary. The external shape is also the same.

Further, when forming a chamfer on an optical member, for example, in the case of a rectangular optical member, it is possible to chamfer at least one side of the optical member or chamfer two opposing sides.

Furthermore, in the various embodiments described above, a single optical member was used, but even if a combination of multiple optical members is used, such as a combination of a color stripe filter and a transparent protective glass plate, Chamfers may be formed after these are bonded.

〔Effect of the invention〕

According to the solid-state imaging device according to the present invention, internal stress caused by shrinkage of the sealing resin over time can be directed diagonally downward with respect to the semiconductor chip, making it possible to use a sealing resin with high moisture resistance. It is possible. Therefore, the optical member bonded to the semiconductor chip is not lifted up, and the #I
It is possible to obtain a solid-state imaging device that does not cause # and can be miniaturized.

[Brief explanation of the drawing]

11...---m-solid-state image sensor, 12...
-...Semiconductor chip 13.51.61-...
-・-Base, 20-・-・・・Top surface 21.31
．． 41・・・・・・〜・Outer peripheral surface, 22, 32.42・
...------ Chamfer master and disciple 1 Figures (A) and (B) are a sectional view and partially enlarged view showing a first embodiment of a solid-state image sensor according to the present invention, and Figure 2 is a diagram showing the solid-state image sensor according to the first embodiment. 3 is a sectional view showing a third embodiment of the solid-state imaging device; FIG. 4 is a sectional view showing a fourth embodiment of the solid-state imaging device; The figure shows a cross-sectional view of a fifth embodiment of the solid-state image sensor, and FIG. 6 shows a cross-sectional view of a conventional solid-state image sensor.

Claims (1)

[Claims] In a solid-state imaging device in which an optical member is bonded to the surface of a semiconductor chip, the semiconductor chip is die-bonded to the surface of a base body, the optical member has a chamfered portion formed on at least a portion of the outer peripheral surface from the upper surface side, and the outer peripheral surface of the optical member. A solid-state imaging device, comprising: a sealing resin applied to the semiconductor chip, and the internal stress generated when the sealing resin contracts is directed diagonally downward with respect to the semiconductor chip.