JP2002043554A - Ccd package module - Google Patents

Ccd package module

Info

Publication number
JP2002043554A
JP2002043554A JP2000359731A JP2000359731A JP2002043554A JP 2002043554 A JP2002043554 A JP 2002043554A JP 2000359731 A JP2000359731 A JP 2000359731A JP 2000359731 A JP2000359731 A JP 2000359731A JP 2002043554 A JP2002043554 A JP 2002043554A
Authority
JP
Japan
Prior art keywords
chip
substrate
package module
ccd package
image pickup
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000359731A
Other languages
Japanese (ja)
Inventor
Wen Lo Shieh
文楽 謝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orient Semiconductor Electronics Ltd
Original Assignee
Orient Semiconductor Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Orient Semiconductor Electronics Ltd filed Critical Orient Semiconductor Electronics Ltd
Publication of JP2002043554A publication Critical patent/JP2002043554A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Wire Bonding (AREA)
  • Light Receiving Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a CCD package module for reduced thickness. SOLUTION: Related to a CCD package module 1, a circuit 121 is directly, chiefly, manufactured on the bottom surface of a glass 12 for package combination between an image-taking chip 11 and a flip chip, and a tin ball 13 is used for circuit combination between the circuit 121 and a printed circuit board 16. The thickness of a package module of the image-taking chip of a charge coupled device is reduced by coupling technology of the flip chip, use of a transparent glass substrate to manufacture a circuit for a package, or a coupling technology of the flip chip for combination with various substrate, for the package module of a thin-type CCD image-taking chip.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【発明の属する技術分野】本発明は、ＣＣＤパッケージ
・モジュールに関し、特にＣＣＤ像取チップのパッケー
ジ構造に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a CCD package module and, more particularly, to a package structure of a CCD imaging chip.

【従来の技術】現在、固体影像ユニットのカメラに応用
されているもっとも先端な技術はＣＣＤ（電荷結合デバ
イス、Charge Coupled Device）であり、これまでの発
展では医療、産業、教育、コンピューター、情報、交
通、一般管理等分野に応用され、例えば図１に示すよう
に、従来のＣＣＤパッケージ・モジュール１’の構造は
一般に先ず導線枠１１’上の基板１２’にワイヤ、ボン
ド法をもって像取チップ２’を基板１２’上に貼り付
け、更に像取チップ２’の周囲に高いダム（Dam）３’
を設置し、並びにダム３’の上にガラス４’を覆い被し
てガラス４’と像取チップ２’の間に適当な距離を作
り、それによって像取軌跡（Ｐ）はガラス４’を通って
像取チップ２’上に形成するようになり、最後は全体モ
ジュールを導線枠１１’と印刷回路板（ＰＣＢ、５’）
で結合する。2. Description of the Related Art At present, the most advanced technology applied to a camera of a solid-state image unit is a CCD (Charge Coupled Device), which has been developed in the fields of medicine, industry, education, computers, information, For example, as shown in FIG. 1, the structure of a conventional CCD package module 1 'is generally applied to the transportation, general management, and the like. 'On the substrate 12' and a high dam 3 'around the image pickup chip 2'.
And a suitable distance between the glass 4 'and the imaging chip 2' by covering the glass 4 'on the dam 3', whereby the imaging locus (P) To form on the image pickup chip 2 ', and finally the entire module is connected to the wire frame 11' and the printed circuit board (PCB, 5 ').
To join.

【発明が解決しようとする課題】上述従来のＣＣＤパッ
ケージ・モジュール１’は構造設計に制限されて全体的
モジュールの高さを低くすることができず、そのために
超小型を応用する場合、例えば超小型工業内視鏡、デジ
タルカメラ・・・等は超小高さのパッケージ・モジュー
ルでなければそのモジュールの面積を有効に縮小するこ
とができない。したがって、本発明の主な目的は、厚み
を低減するＣＣＤパッケージ・モジュールを提供するこ
とにある。The conventional CCD package module 1 'described above is limited in its structural design and cannot reduce the height of the entire module. Small industrial endoscopes, digital cameras, etc. cannot effectively reduce the area of the module unless it is a package module having a very small height. Accordingly, it is a primary object of the present invention to provide a CCD package module having a reduced thickness.

【課題を解決するための手段】上述の目的を達成するた
めの本発明のＣＣＤパッケージ・モジュールは、主とし
てフリップ・チップの結合技術を使い、並びに透明ガラ
スを基板（substrate）とし、回路を製作してパッケー
ジし、またはフリップ・チップの結合技術で各種違った
基板（BT Substrate、Metal Cap Substrate、Metal Sub
strate、CavityDown Substrate）と組合わせ、薄型ＣＣ
Ｄ像取チップのパッケージ・モジュールを製作して電荷
結合デバイス（Charge Coupled Device）の像取チップ
のパッケージ・モジュールの厚みを減らすものである。The CCD package module of the present invention for achieving the above-mentioned object mainly uses a flip-chip bonding technique and uses a transparent glass as a substrate to manufacture a circuit. Or different substrates with flip chip bonding technology (BT Substrate, Metal Cap Substrate, Metal Sub
Combined with strate, CavityDown Substrate), thin CC
A package module of a D imaging chip is manufactured to reduce the thickness of a package module of an imaging chip of a charge coupled device.

【発明の実施の形態】本発明はＣＣＤ像取チップのパッ
ケージ構造に関するもので、それは主として像取チップ
と高さが設計された基板をフリップ・チップのパッケー
ジ結合を行い、その構造は次のいくつかの形態になる。
以下、本発明の複数の実施例を図面に基づいて説明す
る。 （第１実施例） 構造Ａ（図２に示す如く）：このＣＣＤパッケージ・モ
ジュール１は主としてガラス１２の底面に直接回路１２
１を製作して像取チップ１１とフリップ・チップのパッ
ケージ結合を行い、更に錫ボール１３で回路１２１と印
刷回路板１６の回路結合を行う。 （第２実施例） 構造Ａ１（図３に示す如く）：前述構造ＡのＣＣＤパッ
ケージ・モジュール１と同じであるが、そのうち、ガラ
ス１２の回路１２１と像取チップ１１との間は透明充填
材１４または特殊化学材料１５によって充填され、全体
的ＣＣＤパッケージ・モジュール１をより安易になるよ
うにし、かつガラス１２を通った像取軌跡Ｐはやはり透
明充填材１４または特殊化学材料１５を貫通して像取チ
ップ１１へ進入することができる。 （第３実施例） 構造Ｂ（図４に示す如く）：先ず中心に孔が開かれたＢ
ＴまたはMetal Cap基板２３の頂面にガラス２２を貼り
付け、同時にそのＢＴまたはMetal Cap基板２３底面に
適当な回路２３１を製作し、それからフリップ・チップ
結合法で像取チップ２１とＢＴまたはメタル・キャップ
基板２３の回路２３１とをＣＣＤパッケージ・モジュー
ル２になるように結合し、更に全体ＣＣＤパッケージ・
モジュール２と印刷回路板２７を錫ボール２４で結合す
る。 （第４実施例） 構造Ｂ１（図５に示す如く）：前述構造ＢのＣＣＤパッ
ケージ・モジュール２と同じであるが、そのうち、ＢＴ
またはメタル・キャップ基板２３と像取チップ２１との
間は透明充填材２５または特殊化学材料２６によって充
填され、ガラス２２を通った像取軌跡Ｐは同じく透明充
填材２５または特殊化学材料２６を貫通して像取チップ
２１へ進入することができる。 （第５実施例） 構造Ｃ（図６に示す如く）：先ず中心に孔が開かれたＰ
Ｉ基板３３の頂面にガラス３２を貼り付け、同時にその
ＰＩ基板３３の底面に適当な回路を製作し、それからフ
リップ・チップ結合方法で像取チップ３１とＰＩ基板３
３をＣＣＤパッケージ・モジュール３になるように結合
し、更に全体ＣＣＤパッケージ・モジュール３と印刷回
路板３７を錫ボール３４で結合する。 （第６実施例） 構造Ｃ２（図７に示す如く）：前述構造ＣのＣＣＤパッ
ケージ・モジュール３と同じであるが、そのうち、ＰＩ
基板３３と像取チップ３１の間は透明充填材３５または
特殊化学材料３６によって充填され、ガラス３２を通し
た像取軌跡Ｐは同じく透明充填材３５または特殊化学材
料３６を貫通して像取チップ３１へ進入することができ
る。 （第７実施例） 構造Ｄ（図８に示す如く）：先ず開口が下向きである基
板４３の頂面凹口４３１にガラス４２を貼り付け、それ
から開口が下向きの基板４３の下凹口４３２にフリップ
・チップ結合法で像取チップ４１を結合してＣＣＤパッ
ケージ・モジュール４を形成し、更に錫ボール４４でＣ
ＣＤパッケージ・モジュール４と印刷回路板４８を結合
する。 （第８実施例） 構造Ｄ１（図９に示す如く）：前述構造ＤのＣＣＤパッ
ケージ・モジュール４と同じであるが、そのうち、開口
が下向きの基板４３と像取チップ４１との間は透明充填
材４６または特殊化学材料４７によって充填され、ガラ
ス４２を通した像取軌跡Ｐは同じく透明充填材４６また
は特殊化学材料４７を貫通して像取チップ４１へ進入す
ることができる。 （第９実施例） 構造Ｅ（図１０に示す如く）：前述構造Ｄと同じである
が、そのうち、印刷回路板４８との結合方法は導線枠４
５で連結される。 （第１０実施例） 構造Ｅ１（図１１に示す如く）：先述構造ＥのＣＣＤパ
ッケージ・モジュール４と同じであるが、そのうち、開
口が下向きである基板４３と像取チップ４１の間は透明
充填材４６または特殊化学材料４７によって充填され
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention relates to a package structure of a CCD image capturing chip, which mainly performs a package connection of an image capturing chip and a substrate having a designed height by flip chip packaging. It takes the form of
Hereinafter, a plurality of embodiments of the present invention will be described with reference to the drawings. (First Embodiment) Structure A (as shown in FIG. 2): This CCD package module 1 mainly has a circuit 12
1 is manufactured, the image pickup chip 11 and the flip chip are package-bonded, and further, the circuit 121 and the printed circuit board 16 are connected with the tin ball 13. (Second embodiment) Structure A1 (as shown in FIG. 3): the same as the CCD package module 1 of the structure A, except that a transparent filler is provided between the circuit 121 of the glass 12 and the image pickup chip 11. 14 or special chemistry 15 to make the overall CCD package module 1 easier and the imaging trajectory P through the glass 12 also penetrates the transparent filler 14 or special chemistry 15 It is possible to enter the image pickup chip 11. (Third Embodiment) Structure B (as shown in FIG. 4): B having a hole at the center
The glass 22 is adhered to the top surface of the T or Metal Cap substrate 23, and at the same time, an appropriate circuit 231 is manufactured on the bottom surface of the BT or Metal Cap substrate 23, and then the image pickup chip 21 and the BT or metal substrate are flip-chip bonded. The circuit 231 on the cap substrate 23 is connected to the CCD package module 2 to form a CCD package module 2.
The module 2 and the printed circuit board 27 are connected with tin balls 24. (Fourth Embodiment) Structure B1 (as shown in FIG. 5): Same as the CCD package module 2 of the structure B described above, but among them, BT
Alternatively, the space between the metal cap substrate 23 and the image capturing chip 21 is filled with a transparent filler 25 or a special chemical material 26, and the image capturing locus P passing through the glass 22 also penetrates the transparent filler 25 or the special chemical material 26. Then, it is possible to enter the image pickup chip 21. (Fifth Embodiment) Structure C (as shown in FIG. 6): P having a hole at the center
The glass 32 is attached to the top surface of the I substrate 33, and at the same time, an appropriate circuit is manufactured on the bottom surface of the PI substrate 33. Then, the image pickup chip 31 and the PI substrate 3 are flip-chip bonded.
3 is connected so as to become the CCD package module 3, and the entire CCD package module 3 and the printed circuit board 37 are connected with tin balls 34. Sixth Embodiment Structure C2 (as shown in FIG. 7): Same as the CCD package module 3 of the structure C described above, but PI
The space between the substrate 33 and the image pickup chip 31 is filled with a transparent filler 35 or a special chemical material 36, and the image pickup locus P through the glass 32 also penetrates the transparent filler 35 or the special chemical material 36 to form an image pickup chip. 31 can be entered. (Seventh Embodiment) Structure D (as shown in FIG. 8): First, glass 42 is attached to the top opening 431 of the substrate 43 whose opening is downward, and then the lower opening 432 of the substrate 43 whose opening is downward. The image pickup chip 41 is connected by the flip chip bonding method to form the CCD package module 4, and the C
The CD package module 4 and the printed circuit board 48 are connected. (Eighth Embodiment) Structure D1 (as shown in FIG. 9): Same as the CCD package module 4 of the structure D described above, but the space between the substrate 43 and the image pickup chip 41 with the opening facing downward is transparently filled. The imaging trajectory P filled with the material 46 or the special chemical material 47 and passing through the glass 42 can also penetrate the transparent filler 46 or the special chemical material 47 and enter the imaging chip 41. (Embodiment 9) Structure E (as shown in FIG. 10): Same as the structure D described above, except that the connection method with the printed circuit board 48 is
5 are connected. (Tenth embodiment) Structure E1 (as shown in FIG. 11): Same as the CCD package module 4 of the structure E described above, except that the space between the substrate 43 and the image pickup chip 41 whose opening is downward is transparently filled. Filled with material 46 or special chemical material 47.

【図面の簡単な説明】[Brief description of the drawings]

【図１】ＣＣＤパッケージ・モジュールの先行技術を示
す意示図である。FIG. 1 is a schematic diagram showing the prior art of a CCD package module.

【図２】本発明の第１実施例によるＣＣＤパッケージ・
モジュールの像取チップとガラス基板とのフリップ・チ
ップ結合を示す意表図である。FIG. 2 shows a CCD package according to a first embodiment of the present invention;
FIG. 4 is a schematic diagram showing flip chip bonding between an image pickup chip of a module and a glass substrate.

【図３】本発明の第２実施例によるＣＣＤパッケージ・
モジュールの像取チップとガラス基板とのフリップチッ
プ結合を示す意表図である。FIG. 3 shows a CCD package according to a second embodiment of the present invention;
FIG. 3 is a schematic diagram showing flip chip bonding between the image pickup chip of the module and the glass substrate.

【図４】本発明の第３実施例によるＣＣＤパッケージ・
モジュールの像取チップとＢＴまたはメタル・キャップ
基板とのフリップ・チップ結合を示す意表図である。FIG. 4 shows a CCD package according to a third embodiment of the present invention;
FIG. 4 is a schematic diagram showing flip chip bonding between an image capturing chip of a module and a BT or metal cap substrate.

【図５】本発明の第４実施例によるＣＣＤパッケージ・
モジュールの像取チップとＢＴまたはメタル・キャップ
基板とのフリップ・チップ結合を示す意表図である。FIG. 5 shows a CCD package according to a fourth embodiment of the present invention;
FIG. 4 is a schematic diagram showing flip chip bonding between an image capturing chip of a module and a BT or metal cap substrate.

【図６】本発明の第５実施例によるＣＣＤパッケージ・
モジュールの像取チップと一層合金ＰＩ基板とのフリッ
プ・チップ結合を示す意表図である。FIG. 6 shows a CCD package according to a fifth embodiment of the present invention;
FIG. 4 is a schematic diagram showing flip chip bonding between the image capturing chip of the module and the single-layer alloy PI substrate.

【図７】本発明の第６実施例によるＣＣＤパッケージ・
モジュールの像取チップと一層合金ＰＩ基板とのフリッ
プ・チップ結合を示す意表図である。FIG. 7 shows a CCD package according to a sixth embodiment of the present invention;
FIG. 4 is a schematic diagram showing flip chip bonding between the image capturing chip of the module and the single-layer alloy PI substrate.

【図８】本発明の第７実施例によるＣＣＤパッケージ・
モジュールの像取チップと下向き開口基板とのフリップ
・チップ結合を示す意表図である。FIG. 8 shows a CCD package according to a seventh embodiment of the present invention;
FIG. 5 is a schematic diagram showing flip chip bonding between the image pickup chip of the module and the downward opening substrate.

【図９】本発明の第８実施例によるＣＣＤパッケージ・
モジュールの像取チップと下向き開口基板とのフリップ
・チップ結合を示す意表図である。FIG. 9 shows a CCD package according to an eighth embodiment of the present invention;
FIG. 5 is a schematic diagram showing flip chip bonding between the image pickup chip of the module and the downward opening substrate.

【図１０】本発明の第９実施例によるＣＣＤパッケージ
・モジュールの像取チップと下向き開口基板とのフリッ
プ・チップ結合を示す意表図である。FIG. 10 is a schematic diagram showing a flip chip connection between an image pickup chip and a downward opening substrate of a CCD package module according to a ninth embodiment of the present invention.

【図１１】本発明の第１０実施例によるＣＣＤパッケー
ジ・モジュールの像取チップと下向き開口基板とのフリ
ップ・チップ結合を示す意表図である。FIG. 11 is a schematic diagram showing flip chip bonding between an image pickup chip and a downward opening substrate of a CCD package module according to a tenth embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１ ＣＣＤパッケージ・モジュール １１ 像取チップ １２ ガラス １３ 錫ボール １６ 印刷回路板１６ １２１ 回路 DESCRIPTION OF SYMBOLS 1 CCD package module 11 Image capture chip 12 Glass 13 Tin ball 16 Printed circuit board 16 121 Circuit

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 31/02 Ｈ０１Ｌ 23/12 Ｇ Ｈ０４Ｎ 5/335 31/02 Ｂ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 31/02 H01L 23/12 G H04N 5/335 31/02 B

Claims (9)

【特許請求の範囲】[Claims] 【請求項１】 像取チップと高さが設計された基板によ
ってフリップ・チップ結合を行うＣＣＤパッケージ・モ
ジュールであって、 ガラスの底面に直接回路を製作して前記像取チップとフ
リップ・チップ結合を行い、更に錫ボールで前記回路と
印刷回路板の回路結合を行うことを特徴とするＣＣＤパ
ッケージ・モジュール。1. A CCD package module for performing flip-chip bonding using an imaging chip and a substrate whose height is designed, wherein a circuit is directly formed on a bottom surface of glass to connect the imaging chip and the flip-chip. And a circuit connection between the circuit and the printed circuit board using tin balls. 【請求項２】 前記回路と前記像取チップとの間は透明
充填材または特殊化学材料が充填され、前記ガラスを通
った像取軌跡は前記透明充填材または前記特殊化学材料
を貫通して前記像取チップに進入することを特徴とする
請求項１記載のＣＣＤパッケージ・モジュール。2. A space between the circuit and the image capturing chip is filled with a transparent filler or a special chemical material, and an image capturing locus through the glass penetrates the transparent filler or the special chemical material to form the image. 2. The CCD package module according to claim 1, wherein the CCD package module enters the image pickup chip. 【請求項３】 像取チップと高さが設計された基板によ
ってフリップ・チップ結合を行うＣＣＤパッケージ・モ
ジュールであって、 中心に孔が開けられたＢＴまたはメタル・キャップ基板
の頂面にガラスを貼り付け、前記ＢＴまたは前記メタル
・キャップ基板の底面に適当な回路を製作し、フリップ
・チップ結合法で前記像取チップと前記ＢＴまたは前記
メタル・キャップ基板上の回路とを結合し、錫ボールで
印刷回路板を結合することを特徴とするＣＣＤパッケー
ジ・モジュール。3. A CCD package module for performing flip-chip bonding with an image pickup chip and a substrate whose height is designed, wherein a glass is formed on the top surface of a BT or metal cap substrate having a hole formed in the center. Affixing, forming an appropriate circuit on the bottom surface of the BT or the metal cap substrate, connecting the image pickup chip and the circuit on the BT or the metal cap substrate by a flip chip bonding method, A CCD package module, characterized in that a printed circuit board is combined with the module. 【請求項４】 前記ＢＴまたは前記メタル・キャップ基
板と前記像取チップとの間は透明充填材または特殊化学
材料が充填されていることを特徴とする請求項３記載の
ＣＣＤパッケージ・モジュール。4. The CCD package module according to claim 3, wherein a space between the BT or the metal cap substrate and the image pickup chip is filled with a transparent filler or a special chemical material. 【請求項５】 像取チップと高さが設計された基板によ
ってフリップ・チップ結合を行うＣＣＤパッケージ・モ
ジュールであって、 中心に孔が開けられたＰＩ基板の頂面にガラスを貼り付
け、前記ＰＩ基板の底面に適当な回路を製作し、フリッ
プ・チップ結合法で前記像取チップと前記ＰＩ基板とを
結合し、錫ボールで印刷回路板を結合することを特徴と
するＣＣＤパッケージ・モジュール。5. A CCD package module for performing flip-chip bonding with an imaging chip and a substrate whose height is designed, wherein a glass is attached to a top surface of a PI substrate having a hole formed in the center thereof. A CCD package module comprising: forming an appropriate circuit on the bottom surface of a PI substrate; connecting the image pickup chip and the PI substrate by a flip-chip bonding method; and bonding a printed circuit board with a tin ball. 【請求項６】 前記ＰＩ基板と前記像取チップとの間に
は透明充填材または特殊化学材料が充填されていること
を特徴とする請求項５記載のＣＣＤパッケージ・モジュ
ール。6. The CCD package module according to claim 5, wherein a space between the PI substrate and the image pickup chip is filled with a transparent filler or a special chemical material. 【請求項７】 像取チップと高さが設計された基板によ
ってフリップ・チップ結合を行うＣＣＤパッケージ・モ
ジュールであって、 開口が下向きである基板の頂面凹口にガラスを貼り付
け、開口が下向きの基板の下凹口にフリップ・チップ結
合法で前記像取チップを結合し、錫ボールで印刷回路板
を結合することを特徴とするＣＣＤパッケージ・モジュ
ール。7. A CCD package module for performing flip-chip bonding by using an image pickup chip and a substrate whose height is designed, wherein glass is attached to a top-side recess of a substrate having an opening facing downward, and an opening is provided. A CCD package module, wherein said imaging chip is connected to a lower recess of a substrate facing down by a flip chip bonding method, and a printed circuit board is connected by a tin ball. 【請求項８】 前記開口が下向きの基板と前記像取チッ
プとの間は透明充填材または特殊化学材料が充填され、
前記ガラスを通った像取軌跡は前記透明充填材または前
記特殊化学材料を貫通して像取チップに進入することを
特徴とする請求項７記載のＣＣＤパッケージ・モジュー
ル。8. A transparent filler or a special chemical material is filled between the substrate having the opening facing downward and the imaging chip,
8. The CCD package module according to claim 7, wherein the image capturing locus through the glass penetrates the transparent filler or the special chemical material and enters the image capturing chip. 【請求項９】 前記印刷回路板との結合方法は導線枠に
よって連結され、前記開口が下向きの基板と前記像取チ
ップとの間は透明充填材または特殊化学材料が充填され
ていることを特徴とする請求項７記載のＣＣＤパッケー
ジ・モジュール。9. The method of connecting the printed circuit board to the printed circuit board, wherein a transparent filler or a special chemical material is filled between the substrate having the opening facing downward and the image pickup chip. The CCD package module according to claim 7, wherein
JP2000359731A 2000-07-17 2000-11-27 Ccd package module Pending JP2002043554A (en)

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TW89114388 2000-07-17

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DE (1) DE10057647A1 (en)
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TW (1) TW454309B (en)

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