1261355 九、發明說明： 【發明所屬之技術領域】 本發明係有關於-種影像感測器模組，特別係有關於 一種可縮小基板尺寸之影像感測器模組。 【先前技術】 習知的影像感測器模組係利用打線形成之銲線 (bonding wire)電性連接基板與影像感測晶片’但由於$前1261355 IX. Description of the Invention: [Technical Field] The present invention relates to an image sensor module, and more particularly to an image sensor module capable of reducing the size of a substrate. [Prior Art] A conventional image sensor module electrically connects a substrate and an image sensing wafer by bonding wires formed by wire bonding.
影像感測器模組係朝向微小化發展，而以打線形成之= 係使得基板之尺寸無法縮小。 請參閱第1圖，一種習知的影像感測器模組1〇〇係包 含一基板110、一影像感測晶片120以及複數個銲線13〇。 該基板110係具有一上表面ln及複數個連接墊112。該 影像感測晶片120係設置於該基板丨i 〇之該上表面i丨i。 4影像感測晶片1 2 0係具有一主動面121及複數個銲塾 1 22 ’打線形成该些銲線130係電性連接該基板11 〇與該 於像感測晶片1 2 0。一鏡片模組1 4 0係結合至該基板11 〇， 使得該影像感測晶片1 20與該些銲線1 30被氣閉密封於該 鏡片模組1 40與該基板11 〇所結合之空間内，以構成一微 型攝影模組（Compact Camera Module，CCM)。 由於該影像感測器模組1 00係以打線形成之該些銲線 130電性連接該基板110與該影像感測晶片120，因此在 該基板11 0之該上表面111係需預留打線空間，以利形成 該些銲線130，但其係造成該基板110無法縮小尺寸。並 且在該基板110之該上表面111係會設置被動元件，通常 5 !261355 被動元件係被接合於該些連接墊11 2之外圍，因此亦會導 致該基板11 0尺寸擴大，而不符合CCM產品微小化之需 求。 【發明内容】 本發明之主要目的係在於提供一種影像感測器模 組’ 一影像感測晶片係設置於一基板上，該影像感測晶片 係具有一主動面、一背面、複數個側面以及複數個側面銲 塾，該些側面銲墊係形成於該些側面之其中至少一側面， 複數個銲料係連接該影像感測晶片之該些側面銲墊與該 基板之複數個連接墊，藉由改變該些側面銲墊與該些連接 塾之位置以供銲料電性連接該影像感測晶片與該基板，該 基板之該些連接墊係鄰近於該影像感測晶片，因此可縮小 基板尺寸。 本發明之次一目的係在於提供一種影像感測器模 組’一影像感測晶片及複數個被動元件係設置於一基板 上’該影像感測晶片係具有複數個側面銲墊，每一被動元 件係具有一第一電極以及一第二電極，複數個銲料係分別 連接該基板之複數個連接墊與該些被動元件之該些第一 電極以及連接該影像感測晶片之該些側面銲墊與該些被 動70件之該些第二電極，藉由形成於該影像感測晶片之該 二側面鲜墊’以利該些銲料連接該影像感測晶片之該些側 面輝墊與該些被動元件之該些第二電極。因此，能接合更 多數量之被動元件，符合CCM產品微小化趨勢。 依據本發明，一種影像感測器模組主要包含一基板、 1261355 一影像感測晶片及複數個銲料。該基板係具有複數個連接 塾’ 5玄於像感測晶片係設置於該基板上，該影像感測晶片 係具有一主動面、一背面、複數個侧面以及複數個側面銲 塾’其中違主動面係包含有一感測區，該些侧面銲塾係形 成於該些側面之其中至少一侧面，該些銲料係連接該影像 感測晶片之該些側面銲墊與該基板之該些連接墊。 【實施方式】 依本發明之第一具體實施例，請參閱第2圖，一種影 像感測器模組200主要包含一基板2丨〇、一影像感測晶片 220及複數個銲料23〇。該基板21〇係具有一上表面2ιι 及複數個連接墊212，該影像感測晶片220係設置於該基 板210之該上表面211，該影像感測晶片22〇係具有一主 動面221、一背面222、複數個側面223以及複數個側面 銲塾224。較佳地，在該影像感測晶片220之該背面222 係形成有一黏晶層24〇，例如膠帶、液態黏膠、B階黏膠 或共晶接合層，使得該影像感測晶片220之該背面222平 整貼附於該基板210之該上表面211。該影像感測晶片22〇 之忒主動面22 1係包含有一感測區225，例如該影像感測 日日片 220 係可為 CMOS ( Complimentary Metal Oxide Semiconductor，互補金屬氧化半導體）影像感測晶片。該 些側面銲墊224係形成於該些側面223之其中至少一側 面，例如可形成於該影像感測晶片22〇之單側面、兩相對 側面或是四周側面。在本實施例中，該些側面銲墊224係 由該影像感測晶片220之該主動面221側邊延伸至該些側 7 !261355 面223之其中至少一側面。-太 在本貫細例中，在黏晶之後， 該些側面銲墊224以鄰接於嗜其 文％巧基板2 1 0之該些連接墊2 i 2 為較佳，以利該些鲜料2 3 0夕、、η、叫 ^ 之濕潤。该些銲料23〇係能藉 由回銲方式以電性連接該爭德、日丨曰u 〜像感/則b曰片220之該些側面銲 墊224與該基板210之該竑遠 只二埂接墊212。而在回銲之前， 該些銲料230係以點塗箄太彳猫也…丄 i寺方式預先形成於該基板21〇之該 些連接墊2 1 2上。通常該此4日冰止 二鋅枓23〇係為錫鉛或錫/銀/銅The image sensor module is developed toward miniaturization, and the formation of the wire is such that the size of the substrate cannot be reduced. Referring to FIG. 1 , a conventional image sensor module 1 includes a substrate 110, an image sensing wafer 120, and a plurality of bonding wires 13A. The substrate 110 has an upper surface ln and a plurality of connection pads 112. The image sensing wafer 120 is disposed on the upper surface i丨i of the substrate 丨i 。. The image sensing wafer 120 has an active surface 121 and a plurality of soldering pads 1 22 '. The bonding wires 130 are electrically connected to the substrate 11 and the image sensing wafer 120. A lens module 1400 is coupled to the substrate 11 〇 such that the image sensing wafer 120 and the bonding wires 130 are hermetically sealed to the space where the lens module 140 and the substrate 11 are combined. Inside, to form a Compact Camera Module (CCM). Since the image sensor module 100 is electrically connected to the substrate 110 and the image sensing wafer 120 by wire bonding, the upper surface 111 of the substrate 110 is required to be lined. The space is formed to facilitate the formation of the bonding wires 130, but it causes the substrate 110 to be reduced in size. And a passive component is disposed on the upper surface 111 of the substrate 110. Usually, the 5!261355 passive component is bonded to the periphery of the connection pads 112, thereby causing the substrate 110 to expand in size without conforming to the CCM. The need for miniaturization of products. SUMMARY OF THE INVENTION The present invention is directed to an image sensor module that is disposed on a substrate having an active surface, a back surface, and a plurality of sides. a plurality of side soldering pads formed on at least one of the sides, the plurality of solders connecting the side pads of the image sensing chip and the plurality of connecting pads of the substrate, The positions of the side pads and the connecting pads are changed for electrically connecting the image sensing wafer and the substrate, and the connecting pads of the substrate are adjacent to the image sensing wafer, thereby reducing the substrate size. A second object of the present invention is to provide an image sensor module, an image sensing chip and a plurality of passive components disposed on a substrate. The image sensing chip has a plurality of side pads, each passive The component has a first electrode and a second electrode, and the plurality of solders respectively connect the plurality of connection pads of the substrate and the first electrodes of the passive components and the side pads of the image sensing die And the passive electrodes of the passive sensing device 70 are formed by the two sides of the image sensing chip to facilitate the soldering of the side surface pads of the image sensing chip and the passive The second electrodes of the component. As a result, a greater number of passive components can be engaged, consistent with the trend toward miniaturization of CCM products. According to the present invention, an image sensor module mainly includes a substrate, a 1261355 image sensing wafer, and a plurality of solders. The substrate has a plurality of connection electrodes disposed on the substrate, the image sensing chip having an active surface, a back surface, a plurality of sides, and a plurality of side soldering pads The surface fastener includes a sensing region formed on at least one of the sides, and the solder is connected to the side pads of the image sensing wafer and the connection pads of the substrate. [Embodiment] According to a first embodiment of the present invention, referring to FIG. 2, an image sensor module 200 mainly includes a substrate 2, an image sensing wafer 220, and a plurality of solders 23A. The substrate 21 has an upper surface 2 ιι and a plurality of connection pads 212. The image sensing chip 220 is disposed on the upper surface 211 of the substrate 210. The image sensing wafer 22 has an active surface 221 and a The back surface 222, the plurality of side surfaces 223, and the plurality of side soldering 224. Preferably, the back surface 222 of the image sensing wafer 220 is formed with a bonding layer 24, such as a tape, a liquid adhesive, a B-stage adhesive or a eutectic bonding layer, so that the image sensing wafer 220 The back surface 222 is flatly attached to the upper surface 211 of the substrate 210. The active surface 22 of the image sensing chip 22 includes a sensing region 225. For example, the image sensing solar array 220 can be a CMOS (Complementary Metal Oxide Semiconductor) image sensing wafer. The side pads 224 are formed on at least one side of the side surfaces 223, for example, on one side, two opposite sides or four sides of the image sensing wafer 22A. In this embodiment, the side pads 224 extend from the side of the active surface 221 of the image sensing wafer 220 to at least one of the sides 7 261 355. - In the present embodiment, after the die bonding, the side pads 224 are preferably adjacent to the connection pads 2 i 2 of the substrate 2 1 0 to facilitate the fresh materials. 2 3 0 夕, η, 叫 ^ Wet. The solders 23 can be electrically connected to the side pads 224 and the substrate 210 of the substrate 210 by reflow soldering.埂 pads 212. Before the reflow, the solders 230 are preliminarily formed on the connection pads 2 1 2 of the substrate 21 by means of spot coating. Usually this 4th ice stop, two zinc bismuth 23 〇 is tin lead or tin / silver / copper
荨無船鮮料。此外，該畢5德式、B丨Μ > 像感測裔杈組2〇〇另包含有一鏡 片模組250，將該鏡片槿έΒ 力丄人^ 兄乃模組250結合至該基板21〇，以氣 密該影像感測晶片220。因此，驻士并傲斗, 口此，籍由改變該些侧面銲墊224 與該些連接墊2 12之位晋，祐埋兮+、由 mi ’使得該些連接墊212更鄰近該 衫像感測晶片220之該此相丨丨而9” 必坚側面223，以利該些銲料230之 連接，可縮小該基板2 1 〇尺寸。 第3A至3D圖係為該影像感測器模組2〇〇在製程中之 截面示意圖。首先，請參閱帛3A圖，提供一影像感測晶 片220。利用晶圓之重新分配層（rdl)形成技術、電射鑽孔 與阳圓電鍍方法，使得複數個側面銲墊224能形成於複數 個側面223之其中至少_側面，在本實施例中，該影像感 測晶片220之該些側面銲墊224係由一主動面221側邊延 伸至忒些側面223之其中至少一側面。接著，請參閱第3b 圖，設置該影像感測晶片220於一基板210之一上表面 2 11 ’複數個形成該上表面2丨丨之連接墊2丨2係鄰近該影 像感測晶片220之該些側面銲墊224。之後，請參閱第3C 圖’以點塗或印刷方式形成複數個銲料230於該基板210 8 1261355 • 之该些連接墊212上。請參閱第3D圖，進行一回銲步驟， • 以回銲該些銲料230使該基板210之該些連接塾212與該 _ 影像感測晶片2 2 0之該些側面銲塾2 2 4電性連接。 此外’請參閱第4圖，依據本發明之第二具體實施例， 另一種影像感測器模組300主要包含一基板3 1〇、一影像 ， 感測晶片320、複數個被動元件330及複數個銲料341、 • 342。該基板3 10係具有一上表面3丨丨及複數個連接墊 3 12，該影像感測晶片320係設置於該基板3 1 〇之該上表 面3 11 ’该景> 像感測晶片3 2 0之一背面3 2 2係形成有一黏 晶層350，使該影像感測晶片320之該背面322平整貼附 於該基板3 1 0之該上表面3 11。該影像感測晶片32〇係具 有一主動面321、複數個側面323以及複數個側面銲墊 324,其中該主動面321係包含有一感測區325，該些側面 知墊3 2 4係形成於該些側面3 2 3。該些被動元件3 3 0係設 置於該基板310上，其中每一被動元件330係具有一第一 鲁 電極331以及一第二電極332。該些銲料341係連接該基 板3 10之該些連接墊3 12與該些被動元件330之該些第一 • 電極331，並且該些銲料342係連接該影像感測晶片320 - 之該些側面銲墊324與該些被動元件330之該些第二電極 332 ’以使該影像感測晶片320電性連接該基板3 1 0。較佳 地’違衫像感測器模組3 〇 〇另包含有一鏡片模組3 6 0，將 該鏡片模組360結合至該基板3 10，以氣密該影像感測晶 ' 片3 2 0及該些被動元件3 3 0。因此，藉由形成於該影像感 • 測晶片320之該些侧面銲墊324，且該些被動元件330之 9 1261355 該些第二電極332更加鄰近於該影像感測晶片320之該些 側面323，以利該些銲料342連接該影像感測晶片320之 該些側面銲墊324與該些被動元件330之該些第二電極 332，使得該基板2 1 0尺寸可以縮小，以達到cCM產品微 小化的功效。 依據本發明之第三具體實施例，請參閱第5圖，另一 種影像感測器模組4 0 0主要包含一基板4 1 〇、一影像感測 晶片4 2 0及複數個銲料4 3 0。該基板4 1 0係具有一上表面 4 11及複數個連接墊4 1 2 ’本實施例中，該基板4 1 〇係可 為外部之多層印刷電路板，該影像感測晶片4 2 0係可直接 設置於該基板410之該上表面411，而不需使用習知之 CCM基板。該影像感測晶片420之一背面422係形成有一 黏晶層440 ’使該影像感測晶片420之該背面422平整貼 附於該基板4 1 0之5亥上表面411。該影像感測晶片4 2 〇係 具有一主動面42 1、複數個側面423以及複數個側面銲墊 424 ’其中该主動面421係包含有一感測區425，該些側面 424係由該影像感測晶片420之該主動面42 1側邊延伸至 該些側面423。該影像感測晶片420之該主動面42丨上係 結合有一鏡片模組450，藉由該些銲料43〇回銲後以電性 連接該基板410與該影像感測晶片42〇並且氣密該感測區 425，故能省略習知打線形成之銲線與微型攝影模組之基 板。此外，該基板410上可另設置有一被動元件46〇。藉 此，可減少基板成本並且簡化封裝製程。 10 ,1261355 第6A至6C圖係為該影像感測器模組4〇〇在製程中之 截面示意圖。首先’請參閱第6 A圖’提供複數個未切割 之影像感測晶片420 ’該些影像感測晶片420係形成於一 晶圓’其中母一影像感測晶片4 2 0係具有一主動面4 2 1、 一背面4 2 2以及複數個側面銲墊4 2 4，該些側面銲墊4 2 4 係利用晶圓之重新分配層（RDL)形成技術、電射鑽孔與晶 圓電鍍方法，形成於該些側面423之其中至少一側面，其 中該主動面421係包含有一感測區425。接著，請參閱第 6B圖，結合複數個鏡片模組450至該些影像感測晶片42〇 之該上表面42 1 ’其係可藉由點塗或印刷方式將一膠體470 形成於該些衫像感測晶片4 2 0之主動面4 2 1周邊，使該歧 鏡片模組450固設於該些影像感測晶片42〇上以氣密該感 測區425。之後，請參閱第6C圖，將已連接有該些鏡片模 組450之该些影像感測晶片42〇進行晶圓切割。最後將已 連接有鏡片模組450之影像感測晶片42〇設置於一基板 4 1 0上，可製得如第5圖所示之該影像感測器模組4⑻。 本發明之保護範圍當視後附之申請專利範圍所界定 2為準，任何熟知此項技藝者，在不脫離本發明之精神和 祀圍内所作之任何變化與修改，均屬於本發明之保護範 圍。 【圖式簡單說明】 第1 圖：習知影像感測器模組之截面示意圖。 第2圖：依據本發明之第一具體實施例，一種影像 感測器模組之截面示意圖。 1261355 第3 A至3 D圖··依據太蘇日日夕哲 本七月之第一具體實施例，該影像感 測為模組在製程中之截面示意圖。 第4圖·依據本發明之第二具體實施例，另一種影 像感測器模組之戴面示意圖。 第5圖·依據本發明之第三具體實施例，另一種影 像感測器模組之截面示意圖。 第6A至6C圖：依據本發明之第三具體實施例，該影像感 測器模組在製程中之截面示意圖。 【主要元件符號說明】 100 影像感 測器 模組 110 基板 111 上 表 面 112 連接墊 120 影像感 測晶 片 121 主 動 面 122 銲墊 130 銲線 140 鏡 片 模組 200 影像感 測器 模組 210 基板 211 上 表 面 212 連接墊 220 影像感 測晶 片 221 主 動 面 222 背面 223 側面 224 側 面 銲墊 225 感測區 230 銲料 240 曰 鏡片模組 a曰 /W 250 300 影像感 測器 模組 320 影像感 測晶 片 321 主 動 面 322 背面 323 側面 324 側 面 銲墊 325 感測區 330 被動元 件 331 第 電極 332 第二電極 341 銲料 342 鮮料 12 1261355 3 50黏晶層 360鏡 400影像感測器模組 410基板 411上荨 No ship fresh material. In addition, the Bi-German, B丨Μ > image sensing group 2 includes a lens module 250, and the lens is coupled to the substrate 21〇. The wafer 220 is sensed by airtight the image. Therefore, the sergeant is proud and arrogant, by changing the side pads 224 and the connection pads 2 12, and burying the laps +, by mi 'to make the connection pads 212 closer to the shirt The opposite side of the sensing chip 220 and the 9" side surface 223, to facilitate the connection of the solders 230, can reduce the size of the substrate 2 1 第. 3A to 3D is the image sensor module 2) Schematic diagram of the cross-section in the process. First, please refer to Figure 3A, to provide an image sensing wafer 220. Using the wafer redistribution layer (rdl) forming technology, electro-drilling and cent-plating methods, The plurality of side pads 224 can be formed on at least one of the plurality of sides 223. In this embodiment, the side pads 224 of the image sensing die 220 extend from the side of the active surface 221 to the side. At least one side of the side surface 223. Next, referring to FIG. 3b, the image sensing wafer 220 is disposed on an upper surface of a substrate 210, and the plurality of connection pads 2'2 forming the upper surface 2' The side pads 224 of the image sensing wafer 220 are adjacent to the image. After that, please refer to 3C FIG. 2 is formed by spot coating or printing on a plurality of solders 230 on the connection pads 212 of the substrate 210 8 1261355. Referring to FIG. 3D, a reflow process is performed, and the solder 230 is reflowed. The connection ports 212 of the substrate 210 are electrically connected to the side solder pads 2 2 4 of the image sensing wafer 220. In addition, please refer to FIG. 4, according to a second embodiment of the present invention, Another image sensor module 300 mainly includes a substrate 3 1 , an image, a sensing chip 320 , a plurality of passive components 330 , and a plurality of solders 341 , 342 . The substrate 3 10 has an upper surface 3 . And the plurality of connection pads 3 12, the image sensing die 320 is disposed on the upper surface of the substrate 3 1 3 3 'the scene> is formed on the back surface of the sensing chip 3 2 0 2 2 The adhesive layer 350 has the back surface 322 of the image sensing chip 320 attached to the upper surface 311 of the substrate 310. The image sensing chip 32 has an active surface 321 and a plurality of sides 323. And a plurality of side pads 324, wherein the active surface 321 includes a sensing region 325, The side surface pads 3 2 4 are formed on the side surfaces 3 2 3 . The passive components 3 3 0 are disposed on the substrate 310 , wherein each of the passive components 330 has a first Lu electrode 331 and a second electrode. 332. The solder 341 is connected to the connection pads 312 of the substrate 316 and the first electrodes 331 of the passive components 330, and the solder 342 is connected to the image sensing die 320- The side pads 324 and the second electrodes 332 ′ of the passive components 330 electrically connect the image sensing die 320 to the substrate 310 . Preferably, the smashed image sensor module 3 further includes a lens module 306, and the lens module 360 is coupled to the substrate 3 10 to airtightly image the crystal slab 3 2 0 and the passive components 3 3 0. Therefore, the side electrodes 324 are formed on the image sensing chip 320, and the second electrodes 332 of the passive components 330 are further adjacent to the side surfaces 323 of the image sensing wafer 320. The solder 342 is connected to the side pads 324 of the image sensing chip 320 and the second electrodes 332 of the passive components 330, so that the size of the substrate 210 can be reduced to achieve a small cCM product. The effect of the process. According to the third embodiment of the present invention, referring to FIG. 5, another image sensor module 400 includes a substrate 4 1 , an image sensing wafer 4 2 0 , and a plurality of solders 4 3 0 . . The substrate 410 has an upper surface 4 11 and a plurality of connection pads 4 1 2 '. In this embodiment, the substrate 4 1 can be an external multilayer printed circuit board, and the image sensing wafer 4 2 0 It can be directly disposed on the upper surface 411 of the substrate 410 without using a conventional CCM substrate. A back surface 422 of the image sensing wafer 420 is formed with a die bonding layer 440 ′. The back surface 422 of the image sensing wafer 420 is flatly attached to the upper surface 411 of the substrate 4 1 0 . The image sensing chip 4 2 has an active surface 42 1 , a plurality of side surfaces 423 , and a plurality of side pads 424 ′′. The active surface 421 includes a sensing region 425 , and the side surfaces 424 are sensed by the image. The side of the active surface 42 1 of the test wafer 420 extends to the side surfaces 423. The active surface 42 of the image sensing chip 420 is coupled to a lens module 450. After the solder 43 is soldered back, the substrate 410 and the image sensing wafer 42 are electrically connected and airtight. Since the sensing area 425 is omitted, the substrate formed by the conventional wire bonding and the substrate of the micro photography module can be omitted. In addition, a passive component 46A can be disposed on the substrate 410. As a result, the substrate cost can be reduced and the packaging process can be simplified. 10,1261355 Figures 6A to 6C are schematic cross-sectional views of the image sensor module 4 in the process. First, please refer to FIG. 6A to provide a plurality of uncut image sensing wafers 420. The image sensing wafers 420 are formed on a wafer. The mother-image sensing wafer 410 has an active surface. 4 2 1 , a back side 4 2 2 and a plurality of side pads 4 2 4, which use a wafer redistribution layer (RDL) forming technique, an electro-drilling and wafer plating method Formed on at least one of the sides 423, wherein the active surface 421 includes a sensing region 425. Next, referring to FIG. 6B, a plurality of lens modules 450 are coupled to the upper surface 42 1 ' of the image sensing wafers 42 to form a colloid 470 on the shirts by spot coating or printing. The sensing lens module 450 is fixed on the image sensing wafer 42A to hermetically seal the sensing region 425. Thereafter, referring to FIG. 6C, the image sensing wafers 42 to which the lens modules 450 are connected are wafer-cut. Finally, the image sensing chip 42A to which the lens module 450 is connected is disposed on a substrate 410, and the image sensor module 4(8) as shown in FIG. 5 can be obtained. The scope of the present invention is defined by the scope of the appended claims, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention are protected by the present invention. range. [Simple description of the figure] Fig. 1 is a schematic cross-sectional view of a conventional image sensor module. Figure 2 is a cross-sectional view of an image sensor module in accordance with a first embodiment of the present invention. 1261355 3A to 3D············································································ Fig. 4 is a schematic view showing the wearing of another image sensor module in accordance with a second embodiment of the present invention. Fig. 5 is a cross-sectional view showing another image sensor module in accordance with a third embodiment of the present invention. 6A to 6C are cross-sectional views showing the image sensor module in a process according to a third embodiment of the present invention. [Main component symbol description] 100 image sensor module 110 substrate 111 upper surface 112 connection pad 120 image sensing wafer 121 active surface 122 solder pad 130 bonding wire 140 lens module 200 image sensor module 210 substrate 211 Surface 212 connection pad 220 image sensing wafer 221 active surface 222 back 223 side 224 side pad 225 sensing area 230 solder 240 曰 lens module a 曰 / W 250 300 image sensor module 320 image sensing wafer 321 active Face 322 Back 323 Side 324 Side pad 325 Sensing area 330 Passive element 331 Electrode 332 Second electrode 341 Solder 342 Fresh material 12 1261355 3 50 Bonded layer 360 mirror 400 image sensor module 410 on substrate 411
420影像感測晶片 421主 423 m ® 424 供J 430銲料 440黏 460被動元件 470膠 片模組 表面 412 連接墊 動面 422 背面 面鍀·塾 425 感測區 晶層 450 鏡片模組 體420 image sensing chip 421 main 423 m ® 424 for J 430 solder 440 adhesive 460 passive component 470 film module surface 412 connection pad moving surface 422 back surface 鍀 · 塾 425 sensing area crystal layer 450 lens module body
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