JPS61222358A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS61222358A
JPS61222358A JP60062526A JP6252685A JPS61222358A JP S61222358 A JPS61222358 A JP S61222358A JP 60062526 A JP60062526 A JP 60062526A JP 6252685 A JP6252685 A JP 6252685A JP S61222358 A JPS61222358 A JP S61222358A
Authority
JP
Japan
Prior art keywords
semiconductor element
circuit substrate
semiconductor
wiring pattern
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60062526A
Other languages
Japanese (ja)
Inventor
Kenzo Hatada
畑田 賢造
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60062526A priority Critical patent/JPS61222358A/en
Publication of JPS61222358A publication Critical patent/JPS61222358A/en
Pending legal-status Critical Current

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  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To decrease the manufacture cost and to improve the reliability by providing a circuit substrate around the semiconductor element and bonding the electrodes of the semiconductor element and a wiring pattern on the circuit substrate. CONSTITUTION:The semiconductor element 1 having a connection lead 12 to a major face side of a glass made transparent substrate 11 and a circuit substrate 13 provided around the element are mounted. The connection lead 12 prolonged from the electrode of the element 1 is bonded to the wiring pattern 14 of the circuit substrate 13. Then the element 1 and circuit substrate 13 are all covered by a protection resin layer 15. Through the constitution above, the semiconductor element group provided in parallel with the transparent glass plate is closed together and the components are the semiconductor element, the transparent glass plate and the circuit substrate only, then the manufacture cost is decreased. Since the semiconductor element including the transparent glass is protected directly by a resin, the reliability is improved.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導体装置、たとえば半導体素子を用いたいわ
ゆる読取りセンサーに関し、構造が著じるしく簡単で、
製造コストが安価なセンサーを提供するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor device, for example, a so-called read sensor using a semiconductor element, which has a significantly simple structure.
This provides a sensor that is inexpensive to manufacture.

従来の技術 0ム、Hム、Fム等のニューメディアの発展に伴ない、
文字1画像を電気的に読みとらせるための読取りセンサ
ーの開発が行なわれている。読取りセンサーは、読取る
だめの素子を読み取る紙のサイズの巾の分だけ配設した
構成や、読取る素子を高密度に形成しておき、これをレ
ンズで拡大して読取らせる構成が一般的であるが、前者
の構成は薄型に構成できるが、後者は多量の半導体素子
を用いない代りに、レンズ系と半導体素子との距離を一
定以上に保つ必要があるため、大型な構成となるもので
あった。第3図は、薄型に構成できる前者の構成の断面
を示している。半導体素子1はCOD 、BBDのMO
5型構造、もしくは、PM接合を有するバイポーラ構造
もしくは発光する構造であって、光を感知、もしくは発
光する前記素子群を駆動するだめの回路をすくなくとも
一体に形成したものである。
With the development of new media such as conventional technology 0m, hm, fm, etc.
A reading sensor for electrically reading a character image is being developed. Generally, a reading sensor has a structure in which the number of elements to be read is the same as the width of the paper to be read, or a structure in which the reading elements are formed in a high density and are magnified with a lens to be read. However, while the former configuration can be made thin, the latter does not use a large number of semiconductor elements, but instead requires a certain distance between the lens system and the semiconductor element, which results in a large configuration. there were. FIG. 3 shows a cross section of the former configuration, which can be constructed thin. Semiconductor element 1 is COD, BBD MO
It is a type 5 structure, a bipolar structure having a PM junction, or a structure that emits light, in which at least a circuit for driving the element group that senses light or emits light is integrally formed.

半導体素子1上に形成した光を感知、もしくは発光する
素子群は50μm〜SOOμm間隔て−列に形成されて
いるものである。半導体素子1はセラミックもしくはガ
ラス入りエポキシ等の配線基板3上に隙間なく載置され
、半導体素子1の入力、出力の電極2から前記配線基板
3の配線パターン4にワイヤーボンディング法によりワ
イヤー6で接続される。配線基板3は基台6に載置し、
更に枠体8を接着剤9で固定すると共に、前記半導体素
子を機械的衝撃や、雰囲気ガス、湿気による汚染等によ
る損傷から保護するために透明ガラス板7で覆い、この
ガラス板7t−前記枠体8に接着剤9で固定するもので
あった。また光信号1゜は前記透明ガラス板7全通して
、半導体素子1に伝達される構成である。
The light-sensing or light-emitting elements formed on the semiconductor element 1 are arranged in a row at intervals of 50 μm to SOO μm. The semiconductor element 1 is placed on a wiring board 3 made of ceramic or glass-containing epoxy without any gaps, and is connected to the wiring pattern 4 of the wiring board 3 from the input and output electrodes 2 of the semiconductor element 1 with wires 6 by wire bonding. be done. The wiring board 3 is placed on the base 6,
Further, the frame 8 is fixed with an adhesive 9, and the semiconductor element is covered with a transparent glass plate 7 to protect it from damage caused by mechanical shock, atmospheric gas, moisture contamination, etc. It was fixed to the body 8 with adhesive 9. Further, the optical signal 1° is transmitted to the semiconductor element 1 through the entire transparent glass plate 7.

発明が解決しようとする問題点 このような従来の構成にあっては、雰囲気のガスや湿気
が、透明ガラス板や基台と枠体の接着面から浸入し、半
導体素子を汚染し、損傷したり、透明ガラス板と基台と
の熱膨張上ソリによって、前記接着面が剥れたりするも
のであった。また、半導体素子の光を感知する素子や発
光する素子と文字9画像を読み取らせる紙面との間隔が
あきすぎ、像が不鮮明となり所定の解像度が得られない
ばかりか、構成部品数が多く、実装コストが著じるしく
高価になるばかりか、ワイヤボンディング法により、半
導体素子の電極と回路基板の配線パターンとをワイヤー
で接合しているために振動や衝撃等により、ワイヤーが
切断し、信頼性をも低下させるものであった。
Problems to be Solved by the Invention In such a conventional configuration, atmospheric gas and moisture can enter through the transparent glass plate or the adhesive surface between the base and the frame, contaminating and damaging the semiconductor elements. In addition, the adhesive surface may peel off due to warping due to thermal expansion between the transparent glass plate and the base. In addition, the distance between the light-sensing element or light-emitting element of the semiconductor element and the paper surface on which the character 9 image is read is too large, making the image unclear and not only unable to obtain the desired resolution, but also due to the large number of components and mounting Not only is the cost significantly higher, but because the wire bonding method uses wires to connect the electrodes of the semiconductor element and the wiring pattern of the circuit board, the wires can break due to vibrations or shocks, reducing reliability. It also lowered the

問題点を解決するための手段 本発明はこのような従来の問題点を解決するため、透明
ガラス板の一主面に半導体素子と回路基板を設けた構成
で、前記回路基板を半導体素子の周縁に設け、前記半導
体素子の電極と回路基板上の配線パターンを接合したも
のである・作用 本発明は上記した構成により、透明ガラス板に並設した
半導体素子群が密接し、構成部品が半導体素子と透明ガ
ラス板と回路基板のみであるために製造コストが安価に
なり、また透明ガラス板を含み半導体素子を直接樹脂で
保護できるため信頼性も著しるしく向上するものである
Means for Solving the Problems In order to solve these conventional problems, the present invention has a structure in which a semiconductor element and a circuit board are provided on one main surface of a transparent glass plate, and the circuit board is placed around the periphery of the semiconductor element. The electrodes of the semiconductor element and the wiring pattern on the circuit board are connected to each other.The present invention has the above-described structure, so that the semiconductor elements arranged in parallel on the transparent glass plate are brought into close contact with each other, and the component parts are connected to the semiconductor element. Since it only requires a transparent glass plate and a circuit board, the manufacturing cost is low, and since it includes a transparent glass plate and the semiconductor element can be directly protected with resin, reliability is significantly improved.

実施例 本発明の一実施例を第1図を用いて説明する。Example An embodiment of the present invention will be described with reference to FIG.

パイレックス、石英等のガラス板の透明基板11の主面
側に、接続用リード12を有する半導体素子1と前記半
導体素子1の周縁に配設される回路基板13が載置され
ている・前記半導体素子1の電極から延在した接続用リ
ード12は回路基板13の配線パターン14に接合され
る。
A semiconductor element 1 having connection leads 12 and a circuit board 13 disposed around the periphery of the semiconductor element 1 are placed on the main surface side of a transparent substrate 11 made of a glass plate such as Pyrex or quartz. Connection leads 12 extending from the electrodes of the element 1 are joined to the wiring pattern 14 of the circuit board 13.

前記接続用リード12は半導体素子の電極から延在せし
めても良いし、回路基板13の所定の位置から延在せし
め、半導体素子1の電極に接合しても良い。この場合回
路゛基板13に形成した配線パターン14の一部を接続
用リードとして半導体素子の電極まで延在し、接合する
事もできる。また半導体素子1は光を感知する素子、例
えばCCI)、BBD等のMOS型あるいはPH接合を
有するバイポーラ型の素子あるいは発光する素子と、こ
れらの素子を駆動するための回路とが一体化されており
、前記光を感知する素子は半導体素子1上で等間隔で少
なくとも一列に配設される。
The connection lead 12 may extend from the electrode of the semiconductor element, or may extend from a predetermined position on the circuit board 13 and be bonded to the electrode of the semiconductor element 1. In this case, a part of the wiring pattern 14 formed on the circuit board 13 can be used as a connection lead to extend to the electrodes of the semiconductor element and can be bonded. Further, the semiconductor element 1 is a combination of a light sensing element (for example, CCI), a MOS type element such as a BBD, a bipolar type element having a PH junction, or a light emitting element, and a circuit for driving these elements. The light sensing elements are arranged in at least one row on the semiconductor device 1 at equal intervals.

また半導体素子1は複数個が一列に並設され、並設され
る長さは、少なくとも文字や画像を読取るために必要と
される長さであり、通常は紙の横巾の寸法まで一列に並
設されるものである。
In addition, a plurality of semiconductor elements 1 are arranged in a line, and the length of the arrangement is at least the length required to read characters or images, and usually they are arranged in a line up to the width of a paper. They are installed in parallel.

本実施例の構成を分解した状態を第2図に示す。FIG. 2 shows an exploded state of the configuration of this embodiment.

透明基板11があり、回路基板13は図の如く載置した
半導体素子1を囲繞する如く口形でも良いが、単に半導
体素子1を並設し、その側縁に設けても良い・前記回路
基板13には半導体素子1の電極から延在したリード1
2が接続されるための配線ハターン14が形成されてい
る。
There is a transparent substrate 11, and the circuit board 13 may be in the shape of a mouth so as to surround the semiconductor element 1 mounted thereon as shown in the figure, but it may also be simply arranged in parallel with the semiconductor elements 1 and provided on the side edge of the circuit board 13. is a lead 1 extending from the electrode of the semiconductor element 1.
A wiring pattern 14 is formed to which the wires 2 and 2 are connected.

前記リード12は100μm直径の太目のムeワイヤー
を超音波圧着して形成しても良いし、半導体素子の電極
に多層金属膜を介してムU突起を形成せしめ、これにS
n  メッキし7’CCu  リードを接合する事も出
来る。ここで前記半導体素子の表面は透明基板に密接あ
るいは近接して載置されるものである〇 これらを組立る際には透明基板11上に半導体素子1を
あらかじめ載置固定しておき、次に回路基板13f:配
設、固定せしめ、前記半導体素子1のリード12と回路
基板13の配線パターン17とを接合しても良いし、先
に前記回路基板1317配線パターン14に半導体素子
1の電極2を接ぞしておき1これを透明基板11上に載
置するこ2としてもよい。半導体素子1と回路基板13
の電量及び、リード12と配線パターン14の接合メ終
れば、第1図の如く、透明基板11f:含み、」導体素
子1、回路基板13の全体をエポキシ、−。
The lead 12 may be formed by ultrasonic pressure bonding of a thick Mu-e wire with a diameter of 100 μm, or by forming a Mu-U protrusion on the electrode of the semiconductor element through a multilayer metal film, and attaching S to the electrode of the semiconductor element.
It is also possible to connect a 7'CCu lead by plating it. Here, the surface of the semiconductor element is placed closely or close to the transparent substrate. When assembling these, the semiconductor element 1 is placed and fixed on the transparent substrate 11 in advance, and then Circuit board 13f: Arranged and fixed, the leads 12 of the semiconductor element 1 and the wiring pattern 17 of the circuit board 13 may be joined, or the electrodes 2 of the semiconductor element 1 may be connected to the wiring pattern 14 of the circuit board 1317 first. It is also possible to place the substrate 1 on the transparent substrate 11 by placing the substrate 1 on the transparent substrate 11. Semiconductor element 1 and circuit board 13
After the electrical charge and the bonding of the leads 12 and the wiring pattern 14 are completed, as shown in FIG.

リコーン樹脂等の保護樹脂層16で覆い、高い(頼性を
得る様にする。
Cover with a protective resin layer 16 such as silicone resin to obtain high reliability.

この様にして完成された読取り用の半導体装置は少なく
とも濃淡の信号を透明基板11の主面1対して垂直な方
向10から受けて動作させるもぐである。
The reading semiconductor device thus completed is a device that operates by receiving at least grayscale signals from the direction 10 perpendicular to the main surface 1 of the transparent substrate 11.

これまでのべてきた半導体素子は、光を感知づる素子あ
るいは発光する素子とこれらを駆動すまための回路が一
体化したものであるが、各々が夕離した状態のものを用
いる事もできる。また、立・シ  設された半導体素子
群の電源、信号等の共通端子は、回路基板の端面領域か
ら外部に導出される。
The semiconductor devices described so far are devices in which a light-sensing device or a light-emitting device and a circuit for driving them are integrated, but devices in which each device is separate can also be used. In addition, common terminals such as power supplies and signals of the semiconductor element groups arranged vertically and vertically are led out from the end surface area of the circuit board.

発明の効果 )   以上のように、本発明によれば次のような効果
を得ることができる。
Effects of the Invention) As described above, according to the present invention, the following effects can be obtained.

(1)構成材料が著しるしく少なく、かつ製造工程が少
なくてよいために実装コストが著しるしく安価になる。
(1) Since the number of constituent materials is significantly reduced and the number of manufacturing steps is reduced, the mounting cost is significantly reduced.

巨@)また、保護用の透明基板に半導体素子が近接もし
くは接しているために半導体装置全体の厚!   さが
著じるしく薄く、軽くなり、商品的価値か高くなるばか
りか、読取りの際の解像度も向上L   する。
Huge@)Also, since the semiconductor element is close to or in contact with the protective transparent substrate, the overall thickness of the semiconductor device increases! Not only does it become noticeably thinner and lighter, increasing its commercial value, but it also improves the resolution when reading.

【図面の簡単な説明】[Brief explanation of the drawing]

〉   第1図は本発明の一実施例における半導体装置
の断面図、第2図は同装置の要部分解斜視図、第゛ 1
3図は従来の半導体装置の断面図である。 1・・・・・・半導体素子、11・・・・・・透明基板
、12・・・“  ・・・リード、13・・・・・・回
路基板、14・・・・・・配線パタ2 −ン、16・・
・・・・保護樹脂層。 /−一一半導体禦子 第2図 /2      /、?
〉 Fig. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention, Fig. 2 is an exploded perspective view of essential parts of the same device,
FIG. 3 is a sectional view of a conventional semiconductor device. 1...Semiconductor element, 11...Transparent substrate, 12..."...Lead, 13...Circuit board, 14...Wiring pattern 2 -n, 16...
...Protective resin layer. /-11 Semiconductor Mutsuko Figure 2 /2 /,?

Claims (2)

【特許請求の範囲】[Claims] (1)透明基板の一主面に並設した半導体素子群と、前
記半導体素子の周縁に配設された配線パターンを有する
回路基板からなり、前記半導体素子群の電極と回路基板
上の配線パターンとが接合され、かつ前記透明基板の一
主面と前記半導体素子群の素子形成面とが近接もしくは
接している事を特徴とする半導体装置。
(1) Consisting of a circuit board having a group of semiconductor elements arranged in parallel on one main surface of a transparent substrate and a wiring pattern arranged around the periphery of the semiconductor element, the electrodes of the group of semiconductor elements and the wiring pattern on the circuit board. A semiconductor device characterized in that the transparent substrate is bonded to the transparent substrate, and one main surface of the transparent substrate and an element forming surface of the semiconductor element group are close to or in contact with each other.
(2)透明基板の一主面を含み、少なくとも半導体素子
群を覆う樹脂層を形成した事を特徴とする特許請求の範
囲第1項記載の半導体装置。
(2) The semiconductor device according to claim 1, further comprising a resin layer that includes one main surface of a transparent substrate and covers at least a group of semiconductor elements.
JP60062526A 1985-03-27 1985-03-27 Semiconductor device Pending JPS61222358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60062526A JPS61222358A (en) 1985-03-27 1985-03-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60062526A JPS61222358A (en) 1985-03-27 1985-03-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS61222358A true JPS61222358A (en) 1986-10-02

Family

ID=13202715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60062526A Pending JPS61222358A (en) 1985-03-27 1985-03-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS61222358A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428065U (en) * 1987-08-10 1989-02-17
JPH03142880A (en) * 1989-10-27 1991-06-18 Matsushita Electric Ind Co Ltd Semiconductor device and its image sensor and image sensor device
JPH04192661A (en) * 1990-11-22 1992-07-10 Ricoh Co Ltd Image reader

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428065U (en) * 1987-08-10 1989-02-17
JPH03142880A (en) * 1989-10-27 1991-06-18 Matsushita Electric Ind Co Ltd Semiconductor device and its image sensor and image sensor device
JPH04192661A (en) * 1990-11-22 1992-07-10 Ricoh Co Ltd Image reader

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