JPS60123053A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS60123053A JPS60123053A JP58229927A JP22992783A JPS60123053A JP S60123053 A JPS60123053 A JP S60123053A JP 58229927 A JP58229927 A JP 58229927A JP 22992783 A JP22992783 A JP 22992783A JP S60123053 A JPS60123053 A JP S60123053A
- Authority
- JP
- Japan
- Prior art keywords
- potential
- substrate
- well
- semiconductor device
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58229927A JPS60123053A (ja) | 1983-12-07 | 1983-12-07 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58229927A JPS60123053A (ja) | 1983-12-07 | 1983-12-07 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60123053A true JPS60123053A (ja) | 1985-07-01 |
JPH0412627B2 JPH0412627B2 (enrdf_load_stackoverflow) | 1992-03-05 |
Family
ID=16899914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58229927A Granted JPS60123053A (ja) | 1983-12-07 | 1983-12-07 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60123053A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6420651A (en) * | 1987-04-03 | 1989-01-24 | Texas Instruments Inc | Semiconductor output buffer device |
US5055903A (en) * | 1989-06-22 | 1991-10-08 | Siemens Aktiengesellschaft | Circuit for reducing the latch-up sensitivity of a cmos circuit |
US5391904A (en) * | 1988-09-01 | 1995-02-21 | Fujitsu Limited | Semiconductor delay circuit device |
US5406100A (en) * | 1991-10-09 | 1995-04-11 | Nec Corporation | Semiconductor integrated circuit device having multi-contact wiring structure |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52117086A (en) * | 1976-03-29 | 1977-10-01 | Sharp Corp | Semiconductor device for touch type switch |
JPS5357775A (en) * | 1976-11-04 | 1978-05-25 | Mitsubishi Electric Corp | Semiconductor ingegrated circuit device |
JPS5422780A (en) * | 1977-07-22 | 1979-02-20 | Hitachi Ltd | Complementary misic |
-
1983
- 1983-12-07 JP JP58229927A patent/JPS60123053A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52117086A (en) * | 1976-03-29 | 1977-10-01 | Sharp Corp | Semiconductor device for touch type switch |
JPS5357775A (en) * | 1976-11-04 | 1978-05-25 | Mitsubishi Electric Corp | Semiconductor ingegrated circuit device |
JPS5422780A (en) * | 1977-07-22 | 1979-02-20 | Hitachi Ltd | Complementary misic |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6420651A (en) * | 1987-04-03 | 1989-01-24 | Texas Instruments Inc | Semiconductor output buffer device |
US5391904A (en) * | 1988-09-01 | 1995-02-21 | Fujitsu Limited | Semiconductor delay circuit device |
US5055903A (en) * | 1989-06-22 | 1991-10-08 | Siemens Aktiengesellschaft | Circuit for reducing the latch-up sensitivity of a cmos circuit |
US5406100A (en) * | 1991-10-09 | 1995-04-11 | Nec Corporation | Semiconductor integrated circuit device having multi-contact wiring structure |
US5528061A (en) * | 1991-10-09 | 1996-06-18 | Nec Corporation | Semiconductor integrated circuit device having multi-contact wiring structure |
Also Published As
Publication number | Publication date |
---|---|
JPH0412627B2 (enrdf_load_stackoverflow) | 1992-03-05 |
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