JPS60117766A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60117766A
JPS60117766A JP58225814A JP22581483A JPS60117766A JP S60117766 A JPS60117766 A JP S60117766A JP 58225814 A JP58225814 A JP 58225814A JP 22581483 A JP22581483 A JP 22581483A JP S60117766 A JPS60117766 A JP S60117766A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
layer
conductivity type
metal
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58225814A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0239868B2 (cg-RX-API-DMAC10.html
Inventor
Yoshiyuki Hirano
平野　芳行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58225814A priority Critical patent/JPS60117766A/ja
Priority to US06/675,768 priority patent/US4716131A/en
Publication of JPS60117766A publication Critical patent/JPS60117766A/ja
Publication of JPH0239868B2 publication Critical patent/JPH0239868B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10P14/6308—
    • H10W20/066—

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP58225814A 1983-11-28 1983-11-30 半導体装置 Granted JPS60117766A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58225814A JPS60117766A (ja) 1983-11-30 1983-11-30 半導体装置
US06/675,768 US4716131A (en) 1983-11-28 1984-11-28 Method of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58225814A JPS60117766A (ja) 1983-11-30 1983-11-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS60117766A true JPS60117766A (ja) 1985-06-25
JPH0239868B2 JPH0239868B2 (cg-RX-API-DMAC10.html) 1990-09-07

Family

ID=16835209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58225814A Granted JPS60117766A (ja) 1983-11-28 1983-11-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS60117766A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63204628A (ja) * 1987-02-19 1988-08-24 Nec Corp 半導体集積回路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568675A (en) * 1978-11-17 1980-05-23 Toshiba Corp Fabrication of complementary mos transistor
JPS56137675A (en) * 1980-03-31 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and manufacture thereof
JPS58191467A (ja) * 1982-04-30 1983-11-08 Sharp Corp 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568675A (en) * 1978-11-17 1980-05-23 Toshiba Corp Fabrication of complementary mos transistor
JPS56137675A (en) * 1980-03-31 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and manufacture thereof
JPS58191467A (ja) * 1982-04-30 1983-11-08 Sharp Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63204628A (ja) * 1987-02-19 1988-08-24 Nec Corp 半導体集積回路

Also Published As

Publication number Publication date
JPH0239868B2 (cg-RX-API-DMAC10.html) 1990-09-07

Similar Documents

Publication Publication Date Title
US4282647A (en) Method of fabricating high density refractory metal gate MOS integrated circuits utilizing the gate as a selective diffusion and oxidation mask
KR20020011317A (ko) 반도체 메모리 장치와 그 제조 방법
US4549340A (en) Method of making CMOS semiconductor device using specially positioned, retained masks, and product formed thereby
KR0168411B1 (ko) 반도체 집적회로장치 및 그 제법
US6074938A (en) Method of forming a semiconductor device comprising a dummy polysilicon gate electrode short-circuited to a dummy element region in a substrate
KR100220261B1 (ko) 필드 산화물에 의해 분리된 서로 다른 도전형의 반도체영역을가진반도체장치및그제조방법
US5733812A (en) Semiconductor device with a field-effect transistor having a lower resistance impurity diffusion layer, and method of manufacturing the same
US20070080404A1 (en) Semiconductor device
JPS6054792B2 (ja) 半導体装置
JPS60117766A (ja) 半導体装置
JP3141825B2 (ja) 半導体装置の製造方法
JP2960444B2 (ja) 半導体集積回路装置及びマイクロプロセッサ
JP3447871B2 (ja) 配線の形成方法及び半導体素子の形成方法
JPH01243460A (ja) 半導体記憶装置の製造方法
JPH11317526A (ja) 半導体集積回路装置およびその製造方法
JP2000183177A (ja) 半導体装置の製造方法
JPS61267365A (ja) 半導体装置
JPS6240765A (ja) 読み出し専用半導体記憶装置およびその製造方法
JPS58116760A (ja) 相補型ｍｏｓ半導体装置
JPS59115554A (ja) 半導体装置の製造方法
JP2596405B2 (ja) 半導体集積回路装置の製造方法
JPH10284438A (ja) 半導体集積回路及びその製造方法
EP0296747A1 (en) Integrated circuit with tub tie
JPS6244700B2 (cg-RX-API-DMAC10.html)
JPH04348567A (ja) 半導体集積回路の製造方法