JPS60116178A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS60116178A JPS60116178A JP58224650A JP22465083A JPS60116178A JP S60116178 A JPS60116178 A JP S60116178A JP 58224650 A JP58224650 A JP 58224650A JP 22465083 A JP22465083 A JP 22465083A JP S60116178 A JPS60116178 A JP S60116178A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- mode
- gate electrode
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Drying Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58224650A JPS60116178A (ja) | 1983-11-29 | 1983-11-29 | 半導体装置の製造方法 |
KR1019840007422A KR890003416B1 (ko) | 1983-11-29 | 1984-11-27 | 반도체 장치 및 그의 제조방법 |
DE8484308259T DE3476841D1 (en) | 1983-11-29 | 1984-11-28 | Compound semiconductor device and method of producing it |
EP84308259A EP0143656B1 (en) | 1983-11-29 | 1984-11-28 | Compound semiconductor device and method of producing it |
US06/676,359 US4742379A (en) | 1983-11-29 | 1984-11-29 | HEMT with etch-stop |
US07/146,664 US4849368A (en) | 1983-11-29 | 1988-01-21 | Method of producing a two-dimensional electron gas semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58224650A JPS60116178A (ja) | 1983-11-29 | 1983-11-29 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60116178A true JPS60116178A (ja) | 1985-06-22 |
JPH0123955B2 JPH0123955B2 (enrdf_load_stackoverflow) | 1989-05-09 |
Family
ID=16817043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58224650A Granted JPS60116178A (ja) | 1983-11-29 | 1983-11-29 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60116178A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62194678A (ja) * | 1986-02-20 | 1987-08-27 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH02205362A (ja) * | 1988-12-28 | 1990-08-15 | American Teleph & Telegr Co <Att> | GaAs集積回路およびその製造方法 |
-
1983
- 1983-11-29 JP JP58224650A patent/JPS60116178A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62194678A (ja) * | 1986-02-20 | 1987-08-27 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH02205362A (ja) * | 1988-12-28 | 1990-08-15 | American Teleph & Telegr Co <Att> | GaAs集積回路およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0123955B2 (enrdf_load_stackoverflow) | 1989-05-09 |
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