JPS6010757A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6010757A
JPS6010757A JP58119133A JP11913383A JPS6010757A JP S6010757 A JPS6010757 A JP S6010757A JP 58119133 A JP58119133 A JP 58119133A JP 11913383 A JP11913383 A JP 11913383A JP S6010757 A JPS6010757 A JP S6010757A
Authority
JP
Japan
Prior art keywords
semiconductor device
melting point
optical semiconductor
welded
sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58119133A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6366062B2 (enExample
Inventor
Manabu Bonshihara
學 盆子原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58119133A priority Critical patent/JPS6010757A/ja
Publication of JPS6010757A publication Critical patent/JPS6010757A/ja
Publication of JPS6366062B2 publication Critical patent/JPS6366062B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Light Receiving Elements (AREA)
  • Led Device Packages (AREA)
JP58119133A 1983-06-30 1983-06-30 半導体装置の製造方法 Granted JPS6010757A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58119133A JPS6010757A (ja) 1983-06-30 1983-06-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58119133A JPS6010757A (ja) 1983-06-30 1983-06-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6010757A true JPS6010757A (ja) 1985-01-19
JPS6366062B2 JPS6366062B2 (enExample) 1988-12-19

Family

ID=14753750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58119133A Granted JPS6010757A (ja) 1983-06-30 1983-06-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6010757A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009503857A (ja) * 2005-07-28 2009-01-29 インテヴァック インコーポレイテッド 高真空容器用半導体ダイアタッチメント
JP2015018873A (ja) * 2013-07-09 2015-01-29 日機装株式会社 半導体モジュール
WO2018043095A1 (ja) * 2016-09-01 2018-03-08 日機装株式会社 光半導体装置および光半導体装置の製造方法
WO2020022278A1 (ja) * 2018-07-27 2020-01-30 Ａｇｃ株式会社 光学パッケージ

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009503857A (ja) * 2005-07-28 2009-01-29 インテヴァック インコーポレイテッド 高真空容器用半導体ダイアタッチメント
JP2015018873A (ja) * 2013-07-09 2015-01-29 日機装株式会社 半導体モジュール
WO2018043095A1 (ja) * 2016-09-01 2018-03-08 日機装株式会社 光半導体装置および光半導体装置の製造方法
JP2018037582A (ja) * 2016-09-01 2018-03-08 日機装株式会社 光半導体装置および光半導体装置の製造方法
TWI659544B (zh) * 2016-09-01 2019-05-11 日商日機裝股份有限公司 光半導體裝置及光半導體裝置的製造方法
CN110521011A (zh) * 2016-09-01 2019-11-29 日机装株式会社 光半导体装置及光半导体装置的制造方法
US11217730B2 (en) 2016-09-01 2022-01-04 Nikkiso Co., Ltd. Optical semiconductor apparatus and method of manufacturing optical semiconductor apparatus
CN110521011B (zh) * 2016-09-01 2022-08-26 日机装株式会社 光半导体装置及光半导体装置的制造方法
WO2020022278A1 (ja) * 2018-07-27 2020-01-30 Ａｇｃ株式会社 光学パッケージ

Also Published As

Publication number Publication date
JPS6366062B2 (enExample) 1988-12-19

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