JPS6010757A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6010757A
JPS6010757A JP58119133A JP11913383A JPS6010757A JP S6010757 A JPS6010757 A JP S6010757A JP 58119133 A JP58119133 A JP 58119133A JP 11913383 A JP11913383 A JP 11913383A JP S6010757 A JPS6010757 A JP S6010757A
Authority
JP
Japan
Prior art keywords
semiconductor device
melting point
optical semiconductor
welded
sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58119133A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6366062B2 (enExample
Inventor
Manabu Bonshihara
學 盆子原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58119133A priority Critical patent/JPS6010757A/ja
Publication of JPS6010757A publication Critical patent/JPS6010757A/ja
Publication of JPS6366062B2 publication Critical patent/JPS6366062B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10W72/884—
    • H10W90/734—
    • H10W90/754—

Landscapes

  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
JP58119133A 1983-06-30 1983-06-30 半導体装置の製造方法 Granted JPS6010757A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58119133A JPS6010757A (ja) 1983-06-30 1983-06-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58119133A JPS6010757A (ja) 1983-06-30 1983-06-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6010757A true JPS6010757A (ja) 1985-01-19
JPS6366062B2 JPS6366062B2 (enExample) 1988-12-19

Family

ID=14753750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58119133A Granted JPS6010757A (ja) 1983-06-30 1983-06-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6010757A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009503857A (ja) * 2005-07-28 2009-01-29 インテヴァック インコーポレイテッド 高真空容器用半導体ダイアタッチメント
JP2015018873A (ja) * 2013-07-09 2015-01-29 日機装株式会社 半導体モジュール
WO2018043095A1 (ja) * 2016-09-01 2018-03-08 日機装株式会社 光半導体装置および光半導体装置の製造方法
WO2020022278A1 (ja) * 2018-07-27 2020-01-30 Ａｇｃ株式会社 光学パッケージ

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009503857A (ja) * 2005-07-28 2009-01-29 インテヴァック インコーポレイテッド 高真空容器用半導体ダイアタッチメント
JP2015018873A (ja) * 2013-07-09 2015-01-29 日機装株式会社 半導体モジュール
WO2018043095A1 (ja) * 2016-09-01 2018-03-08 日機装株式会社 光半導体装置および光半導体装置の製造方法
JP2018037582A (ja) * 2016-09-01 2018-03-08 日機装株式会社 光半導体装置および光半導体装置の製造方法
TWI659544B (zh) * 2016-09-01 2019-05-11 Nikkiso Co., Ltd. 光半導體裝置及光半導體裝置的製造方法
CN110521011A (zh) * 2016-09-01 2019-11-29 日机装株式会社 光半导体装置及光半导体装置的制造方法
US11217730B2 (en) 2016-09-01 2022-01-04 Nikkiso Co., Ltd. Optical semiconductor apparatus and method of manufacturing optical semiconductor apparatus
CN110521011B (zh) * 2016-09-01 2022-08-26 日机装株式会社 光半导体装置及光半导体装置的制造方法
WO2020022278A1 (ja) * 2018-07-27 2020-01-30 Ａｇｃ株式会社 光学パッケージ

Also Published As

Publication number Publication date
JPS6366062B2 (enExample) 1988-12-19

Similar Documents

Publication Publication Date Title
EP0089044B1 (en) A semiconductor device having a container sealed with a solder of low melting point
US4784974A (en) Method of making a hermetically sealed semiconductor casing
JP2993472B2 (ja) 光半導体用気密封止容器及び光半導体モジュール
JPH03506100A (ja) 固体素子上への密封シール形成方法
CN101622706B (zh) 气密密封用盖、电子部件容纳用封装和电子部件容纳用封装的制造方法
JPS6010757A (ja) 半導体装置の製造方法
CA1201211A (en) Hermetically sealed semiconductor casing
JPS59159583A (ja) 半導体発光装置
GB2036794A (en) Solder Preform
JPH06204352A (ja) 半導体セラミックパッケージ用基体及び蓋体
JPH0228351A (ja) 半導体装置
JP2004055580A (ja) 電子部品パッケージ封止用蓋体
JP2004207539A (ja) 電子部品収納用容器および電子装置
JP2023148890A (ja) リッド及びその製造方法並びに光半導体
JPH03108361A (ja) 半導体集積回路装置
JPS598361Y2 (ja) Ｉｃパツケ−ジ
JPS5880846A (ja) 固体撮像装置
JPH0410644A (ja) ガラス封止型半導体素子収納用パッケージ
JPH043666B2 (enExample)
JPH0637196A (ja) 半導体素子収納用パッケージ
KR20230028210A (ko) 덮개 부재의 제조 방법
JPH0629330A (ja) 半導体装置
JP2007123465A (ja) 電子部品収納用パッケージおよび電子装置およびその製造方法
JPS62285448A (ja) ハ−メチツクシ−ル構造
JPH10294392A (ja) パッケージ部材