JPS5994432A - 半導体検知装置 - Google Patents

半導体検知装置

Info

Publication number
JPS5994432A
JPS5994432A JP58196298A JP19629883A JPS5994432A JP S5994432 A JPS5994432 A JP S5994432A JP 58196298 A JP58196298 A JP 58196298A JP 19629883 A JP19629883 A JP 19629883A JP S5994432 A JPS5994432 A JP S5994432A
Authority
JP
Japan
Prior art keywords
substrate
fet
semiconductor chip
cavity
gate area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58196298A
Other languages
English (en)
Japanese (ja)
Other versions
JPH047589B2 (https=
Inventor
アシ−シユ・エリツク・ボス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Abbott Laboratories
Original Assignee
Abbott Laboratories
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abbott Laboratories filed Critical Abbott Laboratories
Publication of JPS5994432A publication Critical patent/JPS5994432A/ja
Publication of JPH047589B2 publication Critical patent/JPH047589B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/658—Shapes or dispositions of interconnections for devices provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP58196298A 1982-10-21 1983-10-21 半導体検知装置 Granted JPS5994432A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43584582A 1982-10-21 1982-10-21
US435845 1982-10-21

Publications (2)

Publication Number Publication Date
JPS5994432A true JPS5994432A (ja) 1984-05-31
JPH047589B2 JPH047589B2 (https=) 1992-02-12

Family

ID=23730047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58196298A Granted JPS5994432A (ja) 1982-10-21 1983-10-21 半導体検知装置

Country Status (5)

Country Link
EP (1) EP0116117B1 (https=)
JP (1) JPS5994432A (https=)
CA (1) CA1218468A (https=)
DE (1) DE3380082D1 (https=)
ES (2) ES526684A0 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6453151A (en) * 1987-05-22 1989-03-01 Abbott Lab Ion selecting electrode
JP2008026168A (ja) * 2006-07-21 2008-02-07 Horiba Ltd Ｆｅｔセンサ
WO2016121301A1 (ja) * 2015-01-30 2016-08-04 パナソニックＩｐマネジメント株式会社 電気化学測定デバイス

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686492A (en) * 1985-03-04 1987-08-11 Tektronix, Inc. Impedance match connection using multiple layers of bond wires
FR2581480A1 (fr) * 1985-04-10 1986-11-07 Ebauches Electroniques Sa Unite electronique notamment pour carte a microcircuits et carte comprenant une telle unite
JPH05251513A (ja) * 1991-05-28 1993-09-28 Oki Electric Ind Co Ltd 半導体装置
GB9404090D0 (en) * 1994-03-03 1994-04-20 Neotronics Ltd Method of fabricating a gas sensor
US6117292A (en) * 1998-05-06 2000-09-12 Honeywell International Inc Sensor packaging having an integral electrode plug member
US6153070A (en) * 1998-05-07 2000-11-28 Honeywell Inc Sensor packaging using heat staking technique
CN111710671B (zh) * 2020-08-03 2025-05-16 全球能源互联网研究院有限公司 一种高压功率半导体芯片的封装结构和封装方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081272A (https=) * 1973-11-16 1975-07-01
JPS5383462A (en) * 1976-12-28 1978-07-22 Seiko Instr & Electronics Ltd Production of semiconductor device
US4198851A (en) * 1978-05-22 1980-04-22 University Of Utah Method and structure for detecting the concentration of oxygen in a substance
JPS55117254A (en) * 1979-02-28 1980-09-09 Seiko Epson Corp Fabrication of electronic device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3691628A (en) * 1969-10-31 1972-09-19 Gen Electric Method of fabricating composite integrated circuits
US4322680A (en) * 1980-03-03 1982-03-30 University Of Utah Research Foundation Chemically sensitive JFET transducer devices utilizing a blocking interface
GB2079534A (en) * 1980-07-02 1982-01-20 Fairchild Camera Instr Co Package for semiconductor devices
US4449011A (en) * 1982-01-08 1984-05-15 Critikon, Inc. Method and apparatus for encapsulation of chemically sensitive field effect device
US4393130A (en) * 1982-01-11 1983-07-12 Critikon, Inc. System for encapsulation of semiconductor chips

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081272A (https=) * 1973-11-16 1975-07-01
JPS5383462A (en) * 1976-12-28 1978-07-22 Seiko Instr & Electronics Ltd Production of semiconductor device
US4198851A (en) * 1978-05-22 1980-04-22 University Of Utah Method and structure for detecting the concentration of oxygen in a substance
JPS55117254A (en) * 1979-02-28 1980-09-09 Seiko Epson Corp Fabrication of electronic device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6453151A (en) * 1987-05-22 1989-03-01 Abbott Lab Ion selecting electrode
JP2008026168A (ja) * 2006-07-21 2008-02-07 Horiba Ltd Ｆｅｔセンサ
WO2016121301A1 (ja) * 2015-01-30 2016-08-04 パナソニックＩｐマネジメント株式会社 電気化学測定デバイス
CN106415258A (zh) * 2015-01-30 2017-02-15 松下知识产权经营株式会社 电化学测定器件
CN106415258B (zh) * 2015-01-30 2019-07-26 松下知识产权经营株式会社 电化学测定器件

Also Published As

Publication number Publication date
DE3380082D1 (en) 1989-07-20
ES8502573A1 (es) 1985-01-01
JPH047589B2 (https=) 1992-02-12
ES526684A0 (es) 1985-01-01
EP0116117A3 (en) 1985-09-18
ES282913U (es) 1985-06-16
ES282913Y (es) 1986-04-01
EP0116117A2 (en) 1984-08-22
EP0116117B1 (en) 1989-06-14
CA1218468A (en) 1987-02-24

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