ES282913U - Dispositivo transistor de efecto de campo sensible a substancias quimicas - Google Patents

Dispositivo transistor de efecto de campo sensible a substancias quimicas

Info

Publication number
ES282913U
ES282913U ES1984282913U ES282913U ES282913U ES 282913 U ES282913 U ES 282913U ES 1984282913 U ES1984282913 U ES 1984282913U ES 282913 U ES282913 U ES 282913U ES 282913 U ES282913 U ES 282913U
Authority
ES
Spain
Prior art keywords
semiconductor device
electrical connections
establishing electrical
csfet
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES1984282913U
Other languages
English (en)
Other versions
ES282913Y (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Abbott Laboratories
Original Assignee
Abbott Laboratories
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abbott Laboratories filed Critical Abbott Laboratories
Publication of ES282913U publication Critical patent/ES282913U/es
Application granted granted Critical
Publication of ES282913Y publication Critical patent/ES282913Y/es
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H10W70/093—
    • H10W70/658—
    • H10W74/016—
    • H10W70/682—
    • H10W72/073—
    • H10W72/07337—
    • H10W72/07532—
    • H10W72/354—
    • H10W72/536—
    • H10W72/5445—
    • H10W74/00—
    • H10W90/00—
    • H10W90/754—

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Wire Bonding (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

Dispositivo transistor de efecto de campo sensible a substancias químicas, caracterizado porque incluye:una base;una microplaqueta de semiconductor montada en dicha base, teniendo dicha microplaqueta una pluralidad de puntos de contacto; y una pluralidad de elementos conductores impresos en la base y que se extienden a los puntos de contacto de la microplaqueta para realizar conexiones eléctricas con ellos.
ES1984282913U 1982-10-21 1984-11-26 Dispositivo transistor de efecto de campo sensible a substancias quimicas Expired ES282913Y (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43584582A 1982-10-21 1982-10-21

Publications (2)

Publication Number Publication Date
ES282913U true ES282913U (es) 1985-06-16
ES282913Y ES282913Y (es) 1986-04-01

Family

ID=23730047

Family Applications (2)

Application Number Title Priority Date Filing Date
ES526684A Granted ES526684A0 (es) 1982-10-21 1983-10-21 Metodo para conexiones electricas de un semiconductor con un circuito electrico externo.
ES1984282913U Expired ES282913Y (es) 1982-10-21 1984-11-26 Dispositivo transistor de efecto de campo sensible a substancias quimicas

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES526684A Granted ES526684A0 (es) 1982-10-21 1983-10-21 Metodo para conexiones electricas de un semiconductor con un circuito electrico externo.

Country Status (5)

Country Link
EP (1) EP0116117B1 (es)
JP (1) JPS5994432A (es)
CA (1) CA1218468A (es)
DE (1) DE3380082D1 (es)
ES (2) ES526684A0 (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686492A (en) * 1985-03-04 1987-08-11 Tektronix, Inc. Impedance match connection using multiple layers of bond wires
FR2581480A1 (fr) * 1985-04-10 1986-11-07 Ebauches Electroniques Sa Unite electronique notamment pour carte a microcircuits et carte comprenant une telle unite
US4889612A (en) * 1987-05-22 1989-12-26 Abbott Laboratories Ion-selective electrode having a non-metal sensing element
JPH05251513A (ja) * 1991-05-28 1993-09-28 Oki Electric Ind Co Ltd 半導体装置
GB9404090D0 (en) * 1994-03-03 1994-04-20 Neotronics Ltd Method of fabricating a gas sensor
US6117292A (en) * 1998-05-06 2000-09-12 Honeywell International Inc Sensor packaging having an integral electrode plug member
US6153070A (en) * 1998-05-07 2000-11-28 Honeywell Inc Sensor packaging using heat staking technique
JP4653703B2 (ja) * 2006-07-21 2011-03-16 株式会社堀場製作所 Ｆｅｔセンサ
JP6074671B2 (ja) * 2015-01-30 2017-02-08 パナソニックＩｐマネジメント株式会社 電気化学測定デバイス
CN111710671B (zh) * 2020-08-03 2025-05-16 全球能源互联网研究院有限公司 一种高压功率半导体芯片的封装结构和封装方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3691628A (en) * 1969-10-31 1972-09-19 Gen Electric Method of fabricating composite integrated circuits
JPS5081272A (es) * 1973-11-16 1975-07-01
JPS5383462A (en) * 1976-12-28 1978-07-22 Seiko Instr & Electronics Ltd Production of semiconductor device
US4198851A (en) * 1978-05-22 1980-04-22 University Of Utah Method and structure for detecting the concentration of oxygen in a substance
JPS55117254A (en) * 1979-02-28 1980-09-09 Seiko Epson Corp Fabrication of electronic device
US4322680A (en) * 1980-03-03 1982-03-30 University Of Utah Research Foundation Chemically sensitive JFET transducer devices utilizing a blocking interface
GB2079534A (en) * 1980-07-02 1982-01-20 Fairchild Camera Instr Co Package for semiconductor devices
US4449011A (en) * 1982-01-08 1984-05-15 Critikon, Inc. Method and apparatus for encapsulation of chemically sensitive field effect device
US4393130A (en) * 1982-01-11 1983-07-12 Critikon, Inc. System for encapsulation of semiconductor chips

Also Published As

Publication number Publication date
CA1218468A (en) 1987-02-24
DE3380082D1 (en) 1989-07-20
JPS5994432A (ja) 1984-05-31
ES8502573A1 (es) 1985-01-01
JPH047589B2 (es) 1992-02-12
EP0116117A2 (en) 1984-08-22
ES282913Y (es) 1986-04-01
ES526684A0 (es) 1985-01-01
EP0116117B1 (en) 1989-06-14
EP0116117A3 (en) 1985-09-18

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Legal Events

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Effective date: 19970519