GB2126786B - Ion sensitive field effect transistor encapsulation - Google Patents
Ion sensitive field effect transistor encapsulationInfo
- Publication number
- GB2126786B GB2126786B GB08323086A GB8323086A GB2126786B GB 2126786 B GB2126786 B GB 2126786B GB 08323086 A GB08323086 A GB 08323086A GB 8323086 A GB8323086 A GB 8323086A GB 2126786 B GB2126786 B GB 2126786B
- Authority
- GB
- United Kingdom
- Prior art keywords
- field effect
- effect transistor
- sensitive field
- ion sensitive
- transistor encapsulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08323086A GB2126786B (en) | 1982-09-04 | 1983-08-26 | Ion sensitive field effect transistor encapsulation |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8225268 | 1982-09-04 | ||
GB08323086A GB2126786B (en) | 1982-09-04 | 1983-08-26 | Ion sensitive field effect transistor encapsulation |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8323086D0 GB8323086D0 (en) | 1983-09-28 |
GB2126786A GB2126786A (en) | 1984-03-28 |
GB2126786B true GB2126786B (en) | 1986-04-03 |
Family
ID=26283751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08323086A Expired GB2126786B (en) | 1982-09-04 | 1983-08-26 | Ion sensitive field effect transistor encapsulation |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2126786B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2114436B1 (en) * | 1995-03-31 | 1999-04-01 | Consejo Superior Investigacion | AUTOMATED ENCAPSULATION OF SOLID STATE CHEMICAL SENSORS USING PHOTOPOLYMERS CONTAINING EPOXY RESINS AND ACRYLATE POLYURETHANES. |
US8536626B2 (en) * | 2011-04-28 | 2013-09-17 | Honeywell International Inc. | Electronic pH sensor die packaging |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3978578A (en) * | 1974-08-29 | 1976-09-07 | Fairchild Camera And Instrument Corporation | Method for packaging semiconductor devices |
GB1563421A (en) * | 1975-12-18 | 1980-03-26 | Gen Electric | Polyimide-siloxane copolymer protective coating for semiconductor devices |
JPS5466194A (en) * | 1977-11-04 | 1979-05-28 | Kuraray Co | Fet sensor |
US4209356A (en) * | 1978-10-18 | 1980-06-24 | General Electric Company | Selective etching of polymeric materials embodying silicones via reactor plasmas |
US4456522A (en) * | 1981-09-23 | 1984-06-26 | Critikon, Inc. | Support and anchoring mechanism for membranes in selectively responsive field effect devices |
-
1983
- 1983-08-26 GB GB08323086A patent/GB2126786B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB8323086D0 (en) | 1983-09-28 |
GB2126786A (en) | 1984-03-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB8302769D0 (en) | Semiconductor device | |
GB8300539D0 (en) | Semiconductor device | |
GB8332597D0 (en) | Semiconductor device | |
DE3176252D1 (en) | Field effect transistor | |
EP0091831A3 (en) | Mobility-modulation field effect transistor | |
GB8326578D0 (en) | Semiconductor device | |
GB8333893D0 (en) | Semiconductor device | |
GB8325513D0 (en) | Semiconductor device | |
GB8330763D0 (en) | Semiconductor device | |
DE3379883D1 (en) | Semiconductor device | |
GB8332106D0 (en) | Semiconductor device encapsulation | |
JPS57104268A (en) | Field effect transistor | |
GB2085656B (en) | Field effect transistor | |
DE3380194D1 (en) | Semiconductor device | |
DE3369602D1 (en) | Mos type semiconductor device | |
GB2077495B (en) | V-mos field effect semiconductor device | |
DE3275044D1 (en) | Planar semiconductor device | |
GB8300945D0 (en) | Semiconductor device | |
DE3377185D1 (en) | Transistor circuit | |
JPS56147477A (en) | Semiconductor transistor | |
DE3175010D1 (en) | Field effect transistor | |
JPS54128791A (en) | Ion sensor using semiconductor field effect | |
IE830365L (en) | Semiconductor device | |
GB8322868D0 (en) | Semiconductor device | |
GB8333233D0 (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
746 | Register noted 'licences of right' (sect. 46/1977) |
Effective date: 19951020 |
|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19960826 |