ES526684A0 - Metodo para conexiones electricas de un semiconductor con un circuito electrico externo. - Google Patents
Metodo para conexiones electricas de un semiconductor con un circuito electrico externo.Info
- Publication number
- ES526684A0 ES526684A0 ES526684A ES526684A ES526684A0 ES 526684 A0 ES526684 A0 ES 526684A0 ES 526684 A ES526684 A ES 526684A ES 526684 A ES526684 A ES 526684A ES 526684 A0 ES526684 A0 ES 526684A0
- Authority
- ES
- Spain
- Prior art keywords
- semiconductor
- electrical circuit
- electrical connections
- external
- electrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Immunology (AREA)
- Manufacturing & Machinery (AREA)
- Electrochemistry (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Pathology (AREA)
- Geometry (AREA)
- Junction Field-Effect Transistors (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43584582A | 1982-10-21 | 1982-10-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
ES526684A0 true ES526684A0 (es) | 1985-01-01 |
ES8502573A1 ES8502573A1 (es) | 1985-01-01 |
Family
ID=23730047
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES526684A Expired ES8502573A1 (es) | 1982-10-21 | 1983-10-21 | Metodo para conexiones electricas de un semiconductor con un circuito electrico externo. |
ES1984282913U Expired ES282913Y (es) | 1982-10-21 | 1984-11-26 | Dispositivo transistor de efecto de campo sensible a substancias quimicas |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES1984282913U Expired ES282913Y (es) | 1982-10-21 | 1984-11-26 | Dispositivo transistor de efecto de campo sensible a substancias quimicas |
Country Status (5)
Country | Link |
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EP (1) | EP0116117B1 (es) |
JP (1) | JPS5994432A (es) |
CA (1) | CA1218468A (es) |
DE (1) | DE3380082D1 (es) |
ES (2) | ES8502573A1 (es) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4686492A (en) * | 1985-03-04 | 1987-08-11 | Tektronix, Inc. | Impedance match connection using multiple layers of bond wires |
FR2581480A1 (fr) * | 1985-04-10 | 1986-11-07 | Ebauches Electroniques Sa | Unite electronique notamment pour carte a microcircuits et carte comprenant une telle unite |
US4889612A (en) * | 1987-05-22 | 1989-12-26 | Abbott Laboratories | Ion-selective electrode having a non-metal sensing element |
JPH05251513A (ja) * | 1991-05-28 | 1993-09-28 | Oki Electric Ind Co Ltd | 半導体装置 |
GB9404090D0 (en) * | 1994-03-03 | 1994-04-20 | Neotronics Ltd | Method of fabricating a gas sensor |
US6117292A (en) * | 1998-05-06 | 2000-09-12 | Honeywell International Inc | Sensor packaging having an integral electrode plug member |
US6153070A (en) * | 1998-05-07 | 2000-11-28 | Honeywell Inc | Sensor packaging using heat staking technique |
JP4653703B2 (ja) * | 2006-07-21 | 2011-03-16 | 株式会社堀場製作所 | Fetセンサ |
JP6074671B2 (ja) * | 2015-01-30 | 2017-02-08 | パナソニックIpマネジメント株式会社 | 電気化学測定デバイス |
CN111710671A (zh) * | 2020-08-03 | 2020-09-25 | 全球能源互联网研究院有限公司 | 一种高压功率半导体芯片的封装结构和封装方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3691628A (en) * | 1969-10-31 | 1972-09-19 | Gen Electric | Method of fabricating composite integrated circuits |
JPS5081272A (es) * | 1973-11-16 | 1975-07-01 | ||
JPS5383462A (en) * | 1976-12-28 | 1978-07-22 | Seiko Instr & Electronics Ltd | Production of semiconductor device |
US4198851A (en) * | 1978-05-22 | 1980-04-22 | University Of Utah | Method and structure for detecting the concentration of oxygen in a substance |
JPS55117254A (en) * | 1979-02-28 | 1980-09-09 | Seiko Epson Corp | Fabrication of electronic device |
US4322680A (en) * | 1980-03-03 | 1982-03-30 | University Of Utah Research Foundation | Chemically sensitive JFET transducer devices utilizing a blocking interface |
GB2079534A (en) * | 1980-07-02 | 1982-01-20 | Fairchild Camera Instr Co | Package for semiconductor devices |
US4449011A (en) * | 1982-01-08 | 1984-05-15 | Critikon, Inc. | Method and apparatus for encapsulation of chemically sensitive field effect device |
US4393130A (en) * | 1982-01-11 | 1983-07-12 | Critikon, Inc. | System for encapsulation of semiconductor chips |
-
1983
- 1983-10-15 EP EP83110286A patent/EP0116117B1/en not_active Expired
- 1983-10-15 DE DE8383110286T patent/DE3380082D1/de not_active Expired
- 1983-10-21 JP JP58196298A patent/JPS5994432A/ja active Granted
- 1983-10-21 ES ES526684A patent/ES8502573A1/es not_active Expired
- 1983-10-21 CA CA000439427A patent/CA1218468A/en not_active Expired
-
1984
- 1984-11-26 ES ES1984282913U patent/ES282913Y/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0116117A3 (en) | 1985-09-18 |
ES8502573A1 (es) | 1985-01-01 |
JPH047589B2 (es) | 1992-02-12 |
JPS5994432A (ja) | 1984-05-31 |
EP0116117A2 (en) | 1984-08-22 |
ES282913U (es) | 1985-06-16 |
ES282913Y (es) | 1986-04-01 |
DE3380082D1 (en) | 1989-07-20 |
EP0116117B1 (en) | 1989-06-14 |
CA1218468A (en) | 1987-02-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD1A | Patent lapsed |
Effective date: 19970519 |