JPS5976447A - 多層配線方法 - Google Patents
多層配線方法Info
- Publication number
- JPS5976447A JPS5976447A JP18686282A JP18686282A JPS5976447A JP S5976447 A JPS5976447 A JP S5976447A JP 18686282 A JP18686282 A JP 18686282A JP 18686282 A JP18686282 A JP 18686282A JP S5976447 A JPS5976447 A JP S5976447A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- forming
- hole
- dummy
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 11
- 230000010354 integration Effects 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- 239000012212 insulator Substances 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229930194542 Keto Natural products 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18686282A JPS5976447A (ja) | 1982-10-26 | 1982-10-26 | 多層配線方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18686282A JPS5976447A (ja) | 1982-10-26 | 1982-10-26 | 多層配線方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5976447A true JPS5976447A (ja) | 1984-05-01 |
| JPH0542139B2 JPH0542139B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-06-25 |
Family
ID=16195957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18686282A Granted JPS5976447A (ja) | 1982-10-26 | 1982-10-26 | 多層配線方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5976447A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6287902B1 (en) | 1996-06-28 | 2001-09-11 | Samsung Electronics Co., Ltd. | Methods of forming etch inhibiting structures on field isolation regions |
| US6699762B2 (en) | 2001-06-20 | 2004-03-02 | Samsung Electronics Co., Ltd. | Methods of fabricating integrated circuit devices with contact hole alignment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4889684A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-02-24 | 1973-11-22 | ||
| JPS534475A (en) * | 1976-07-02 | 1978-01-17 | Hitachi Ltd | Etching method |
| JPS5352383A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Electrode formation method |
-
1982
- 1982-10-26 JP JP18686282A patent/JPS5976447A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4889684A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-02-24 | 1973-11-22 | ||
| JPS534475A (en) * | 1976-07-02 | 1978-01-17 | Hitachi Ltd | Etching method |
| JPS5352383A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Electrode formation method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6287902B1 (en) | 1996-06-28 | 2001-09-11 | Samsung Electronics Co., Ltd. | Methods of forming etch inhibiting structures on field isolation regions |
| US6699762B2 (en) | 2001-06-20 | 2004-03-02 | Samsung Electronics Co., Ltd. | Methods of fabricating integrated circuit devices with contact hole alignment |
| US7164204B2 (en) | 2001-06-20 | 2007-01-16 | Samsung Electronics Co., Ltd. | Integrated circuit devices with an auxiliary pad for contact hole alignment |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0542139B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-06-25 |
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