JPS5972131A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5972131A
JPS5972131A JP57182180A JP18218082A JPS5972131A JP S5972131 A JPS5972131 A JP S5972131A JP 57182180 A JP57182180 A JP 57182180A JP 18218082 A JP18218082 A JP 18218082A JP S5972131 A JPS5972131 A JP S5972131A
Authority
JP
Japan
Prior art keywords
metal
selectively
silicon
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57182180A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0410219B2 (en:Method
Inventor
Mitsutoshi Furuyama
古山　充利
Takahiko Moriya
守屋　孝彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57182180A priority Critical patent/JPS5972131A/ja
Publication of JPS5972131A publication Critical patent/JPS5972131A/ja
Publication of JPH0410219B2 publication Critical patent/JPH0410219B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57182180A 1982-10-19 1982-10-19 半導体装置の製造方法 Granted JPS5972131A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57182180A JPS5972131A (ja) 1982-10-19 1982-10-19 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57182180A JPS5972131A (ja) 1982-10-19 1982-10-19 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5972131A true JPS5972131A (ja) 1984-04-24
JPH0410219B2 JPH0410219B2 (en:Method) 1992-02-24

Family

ID=16113735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57182180A Granted JPS5972131A (ja) 1982-10-19 1982-10-19 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5972131A (en:Method)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60119750A (ja) * 1983-12-02 1985-06-27 Hitachi Ltd 半導体装置の製造方法
JPS60245149A (ja) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS61128521A (ja) * 1984-11-27 1986-06-16 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS61203671A (ja) * 1985-03-06 1986-09-09 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS6214424A (ja) * 1985-07-11 1987-01-23 Fujitsu Ltd 半導体装置の製造方法
JPS63250463A (ja) * 1987-04-08 1988-10-18 Ulvac Corp 金属薄膜形成方法
JPH02213127A (ja) * 1988-12-09 1990-08-24 American Teleph & Telegr Co <Att> 半導体集積回路デバイス金属部形成

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60119750A (ja) * 1983-12-02 1985-06-27 Hitachi Ltd 半導体装置の製造方法
JPS60245149A (ja) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS61128521A (ja) * 1984-11-27 1986-06-16 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS61203671A (ja) * 1985-03-06 1986-09-09 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS6214424A (ja) * 1985-07-11 1987-01-23 Fujitsu Ltd 半導体装置の製造方法
JPS63250463A (ja) * 1987-04-08 1988-10-18 Ulvac Corp 金属薄膜形成方法
JPH02213127A (ja) * 1988-12-09 1990-08-24 American Teleph & Telegr Co <Att> 半導体集積回路デバイス金属部形成

Also Published As

Publication number Publication date
JPH0410219B2 (en:Method) 1992-02-24

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