JPS5939348A - 真空内試料加熱装置 - Google Patents
真空内試料加熱装置Info
- Publication number
- JPS5939348A JPS5939348A JP14877382A JP14877382A JPS5939348A JP S5939348 A JPS5939348 A JP S5939348A JP 14877382 A JP14877382 A JP 14877382A JP 14877382 A JP14877382 A JP 14877382A JP S5939348 A JPS5939348 A JP S5939348A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- heater
- film heater
- vacuum
- sapphire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims description 22
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 33
- 239000010980 sapphire Substances 0.000 claims abstract description 33
- 238000012546 transfer Methods 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052721 tungsten Inorganic materials 0.000 abstract description 6
- 239000010937 tungsten Substances 0.000 abstract description 6
- 239000000523 sample Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000532784 Thelia <leafhopper> Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012496 blank sample Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Surface Heating Bodies (AREA)
- Devices For Use In Laboratory Experiments (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14877382A JPS5939348A (ja) | 1982-08-27 | 1982-08-27 | 真空内試料加熱装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14877382A JPS5939348A (ja) | 1982-08-27 | 1982-08-27 | 真空内試料加熱装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5939348A true JPS5939348A (ja) | 1984-03-03 |
JPS6159180B2 JPS6159180B2 (enrdf_load_stackoverflow) | 1986-12-15 |
Family
ID=15460334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14877382A Granted JPS5939348A (ja) | 1982-08-27 | 1982-08-27 | 真空内試料加熱装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5939348A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63200483A (ja) * | 1987-01-23 | 1988-08-18 | ペース インコーポレーテッド | 加熱装置および物理的所定値設定回路 |
JPH01110245A (ja) * | 1987-10-23 | 1989-04-26 | Iwatani Internatl Corp | 極低温試験装置 |
CN104233215A (zh) * | 2014-09-01 | 2014-12-24 | 蓝思科技股份有限公司 | 一种蓝宝石镜片上热转印膜和pvd膜之间的强化方法 |
-
1982
- 1982-08-27 JP JP14877382A patent/JPS5939348A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63200483A (ja) * | 1987-01-23 | 1988-08-18 | ペース インコーポレーテッド | 加熱装置および物理的所定値設定回路 |
JPH01110245A (ja) * | 1987-10-23 | 1989-04-26 | Iwatani Internatl Corp | 極低温試験装置 |
CN104233215A (zh) * | 2014-09-01 | 2014-12-24 | 蓝思科技股份有限公司 | 一种蓝宝石镜片上热转印膜和pvd膜之间的强化方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6159180B2 (enrdf_load_stackoverflow) | 1986-12-15 |
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