JPS5939348A - Apparatus for heating specimen in vacuum - Google Patents
Apparatus for heating specimen in vacuumInfo
- Publication number
- JPS5939348A JPS5939348A JP14877382A JP14877382A JPS5939348A JP S5939348 A JPS5939348 A JP S5939348A JP 14877382 A JP14877382 A JP 14877382A JP 14877382 A JP14877382 A JP 14877382A JP S5939348 A JPS5939348 A JP S5939348A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- heater
- film heater
- vacuum
- sapphire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Surface Heating Bodies (AREA)
- Devices For Use In Laboratory Experiments (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、単結晶サファイア板を使用した真／ 空白試料加熱装置に関する。[Detailed description of the invention] [Technical field of invention] The present invention is a true/ Regarding a blank sample heating device.
近年、真空技術の発達と共に１０ ［Ｔｏｒｒ］以下
の超高真空が子軸に得られるようになりた。In recent years, with the development of vacuum technology, it has become possible to obtain an ultra-high vacuum of 10 Torr or less for the child shaft.
そして、超高真空中で分子線エピタキシーや各種高感度
の分析が行われている。その際、試料には真空中で様々
の処理が施されるが、特に加熱は試料の希浄化や結晶成
長等に用いられる重要な処理方法である。Molecular beam epitaxy and various high-sensitivity analyzes are performed in ultra-high vacuum. At this time, the sample is subjected to various treatments in a vacuum, and heating is an important treatment method used for dilution purification of the sample, crystal growth, etc.
現在・、試料を加熱する方法としては、抵抗加熱、レー
ザ加熱、電子ビーム加熱、高周波加熱および直接過賞、
加熱等があるが、これらのいずれにあっても大きな試料
を均一に加熱することは難しい。特に、シリコン半導体
基板の表面清浄化の際には、基板を１０００Ｃ℃）以上
に均一に加熱しなけれはならない。このため、ヒータや
伝熱部材等の構造および材料の選択が重要な問題となる
。すなわち、利料としては高温で試料と反応を起こさず
構造的に強度の大きいもので、さらに超高真空中での使
用を考慮すると高温で蒸気圧の低いものでなけれはなら
ない、しかしながら、上記の要求を全て満足する物質は
未だ０１１発されておらず、これがために従来のＪ’（
、壁用試料加熱装置は何らかの特性を犠牲にしているの
が実情であった。Currently, methods for heating samples include resistance heating, laser heating, electron beam heating, high frequency heating, direct heating,
There are heating methods, etc., but it is difficult to uniformly heat a large sample in any of these methods. In particular, when cleaning the surface of a silicon semiconductor substrate, it is necessary to uniformly heat the substrate to a temperature of 1000° C. or higher. Therefore, the structure and material selection of heaters, heat transfer members, etc. become important issues. In other words, the material must be structurally strong and do not react with the sample at high temperatures, and furthermore, considering its use in an ultra-high vacuum, it must have low vapor pressure at high temperatures.However, as mentioned above, A substance that satisfies all the requirements has not yet been released in 011, which is why the conventional J'(
The reality is that wall sample heating devices sacrifice some characteristics.
本発明の目的は、真空中にあっても試料を均一に加熱す
ることができ、かつガス放出も極めて少なく、強度も十
分大きな真空用試料加熱装置を提供することにある。An object of the present invention is to provide a vacuum sample heating device that can uniformly heat a sample even in a vacuum, emits extremely little gas, and has sufficient strength.
木発明の骨子は、伝熱部利を介してヒータによ）試料を
加熱する装置において、上記伝熱部利なサファイア板で
形成すると共に、とのサファイア板の下面にタングステ
ン等からなる薄膜ヒータを形成するよりにしたことにあ
る。サファイア単結晶の特徴としてれ次の（１）〜（９
）が挙げられる。The gist of the invention is that, in an apparatus for heating a sample (via a heater via a heat transfer section), the heat transfer section is formed of a sapphire plate, and a thin film heater made of tungsten or the like is attached to the bottom surface of the sapphire plate. Rather than forming a The characteristics of sapphire single crystal are as follows (1) to (9)
).
（リ 硬度が高く機械的強度が大きい。(High hardness and mechanical strength.
（２）遠紫外から赤外までの広い領域に亘シ光透過性が
良い。(2) Good light transmittance over a wide range from far ultraviolet to infrared.
（３）熱伝導性−／）＜高く耐熱性、削低温性ＶＬ←Ｌ
れている。(3) Thermal conductivity -/) <High heat resistance, low cutting resistance VL←L
It is.
（４）化学的に安定で耐蝕性に例れている。(4) Chemically stable and corrosion resistant.
・（５）電気絶縁性が高く糾雷、体特性に俟れている。・(5) It has high electrical insulation properties and excellent physical properties.
（６）経時変化のない高精度の表面加工ができる。(6) High-precision surface processing that does not change over time is possible.
（７）摩擦係数が小さく４胛・耗性に働れている。(7) It has a small coefficient of friction and is resistant to wear and tear.
（ｓ） ｉ１放射線特性が例れている。(s) i1 radiation characteristics are exemplified.
（９）高純度のものが得られる。(9) High purity can be obtained.
また、サファイア単結晶の蒸気圧は第１図に示す如く、
２０８３（Ｋ）で１０−’［： Ｔｏ ｒ ｒ ）と十
分低い。さらに、単結晶であるので加熱した隙にガス放
出が少ない等の特徴を有する。したがって、サファイア
は、真空中での絶縁性耐熱材料として非常に優れてシシ
、これを伝熱部利として用いることによシ信頼性の高い
加熱！４！置が実現されると考えられる。In addition, the vapor pressure of sapphire single crystal is as shown in Figure 1.
2083(K) and is sufficiently low as 10-'[: Tor r r ). Furthermore, since it is a single crystal, it has characteristics such as less gas being released into the heated gap. Therefore, sapphire is an excellent insulating and heat-resistant material in a vacuum, and by using it as a heat transfer element, you can achieve highly reliable heating! 4! It is believed that this will be realized.
ところが、サファイアはその線膨張率が１０””（／１
：： ）であ如、結晶の方位によ如若干異なる。このた
め、サファイアの温度差が大きい場合には、熱歪によシ
割れてしまうと言う間−がある。第２図はサファイアの
温度勾配と割れ発生との関係を示す特性図である。この
図からも明らかなように、温度勾配が１００〔℃／ｌＹ
ｎ〕より大きいとサファイアの割れる確率が極端に高く
な石。従って、サファイアを使用する場合、その温度勾
配が小さい状態、例えば１００［℃／ｚ〕よシ小さい状
態に保持しなければならない。そして、この条件は前述
した如くサファイア板の下面に薄膜ピークな被着し、こ
れらを一体形成することによって達成できるのである。However, the coefficient of linear expansion of sapphire is 10"" (/1
:: ), which differs slightly depending on the orientation of the crystal. For this reason, if there is a large temperature difference in sapphire, it may crack due to thermal strain. FIG. 2 is a characteristic diagram showing the relationship between the temperature gradient of sapphire and the occurrence of cracks. As is clear from this figure, the temperature gradient is 100 [℃/lY
If the stone is larger than n], the probability of the sapphire breaking is extremely high. Therefore, when using sapphire, the temperature gradient must be kept small, for example, as small as 100 [° C./z]. This condition can be achieved by depositing a thin film on the lower surface of the sapphire plate and forming them integrally, as described above.
本発明はこのような点に着目し、ヒータおよび平面状の
伝熱部材からなる真空用紙料加熱装置において、伝熱部
材を単結晶サファイア板で形成すると共に、その面内の
温度勾配がｔｏｏ［℃／ｍ）以下となるよう上記サファ
イア板の下面に薄ｐ、＋’：４ヒータを被着形成するよ
うにしたものである。The present invention focuses on such points, and in a vacuum paper stock heating device consisting of a heater and a planar heat transfer member, the heat transfer member is formed of a single crystal sapphire plate, and the in-plane temperature gradient is too [ ℃/m) or less, a thin p, +':4 heater is formed on the lower surface of the sapphire plate.
本発明により、は、平面状の伝熱部利としてツファイア
板を使用しているので、試料の均一加熱を行い得るのれ
勿論、真空中てのガス放出を極めて少なくすることがで
き、さらに強度も十分大きくすることができる。しかも
、ヒータとして面状の穎脱ヒータを用い、これをサファ
イア基板の下面全面に接触させているので、サファイア
板の温度勾配を１００〔℃／ｃｍ〕以下に保持すること
ができ、これによシ割れの発生を確実に防止することが
できる。According to the present invention, since a tsphire plate is used as a planar heat transfer member, not only can the sample be heated uniformly, but gas emission in vacuum can be extremely reduced, and furthermore, the specimen can be strengthened. can also be made large enough. In addition, since a planar heat removal heater is used as the heater and is brought into contact with the entire bottom surface of the sapphire substrate, the temperature gradient of the sapphire plate can be maintained at 100 [°C/cm] or less. The occurrence of cracks can be reliably prevented.
第３１Ｅｌｌｄ：木発明の一害施例を示す概略構成図で
ある。図中１は伝熱部利として作用する平面状、厚さ１
〔門〕の岸結晶サファイア板であシ、このサファイア板
１の下面全面には薄膜ヒータ２が被着形成されている。31st Elld: It is a schematic configuration diagram showing a harmful example of the tree invention. In the figure, 1 is a planar shape that acts as a heat transfer member, and the thickness is 1.
[Gate] is a crystalline sapphire plate, and a thin film heater 2 is formed on the entire lower surface of this sapphire plate 1.
尚トヒータ２は、例えばタングステンを１０−５［Ｔｏ
ｒｒ 〕以下の真空中で蒸着することによって形成され
たもので、ぞのシート抵わしは２ＸＨ１”−２［Ω／口
〕稈度に保持されるものとなっている。Ｎ Ｉｔ、−３
ヒータ２の下面周辺部には、一対の棒状箱枠、？ ａ
、 ３ｂが平行耐層″されてＡ膜ヒータ２に取着されて
いる。そして、これらの霜、極３ａ、３ｂ間に電圧を印
加することによシ、得膜ヒータ２が通電加熱されるもの
と疫っている。The heater 2 is made of tungsten, for example, at 10-5 [To
It is formed by vapor deposition in a vacuum below [rr], and each sheet resistor is maintained at a culmness of 2XH1''-2 [Ω/hole].N It, -3
A pair of rod-shaped box frames are located around the bottom of the heater 2. a
, 3b are attached to the A-film heater 2 with a parallel anti-layer.By applying a voltage between these frost and poles 3a and 3b, the obtained film heater 2 is electrically heated. It's infested with things.
このような構成であれば、サファイア板１がＲｉｊ １
１７４ヒータ２によシ均一に加熱されるだめ、サファイ
ア１０而内における温度勾配を極めて小さく（勿論１０
（１℃／ｃｍ以−「）することができる。With such a configuration, the sapphire plate 1 is Rij 1
In order to uniformly heat the sapphire 174 by the heater 2, the temperature gradient inside the sapphire 10 should be extremely small (of course, the temperature gradient inside the sapphire 10 should be kept very small).
(1°C/cm or more).
したがって、助膜ヒータ２の通知、加熱によってサファ
イア板１が破損することの、ない。Therefore, the sapphire plate 1 will not be damaged by the notification and heating of the auxiliary film heater 2.
７ｊ’、 ４図は上記実施例装置を用いて半導体基板（
試料）４を加熱している状態を示しておシ、基板４は一
すファイア板１からの熱伝坪１．によって加熱されてい
る。なお、図中５はヒータ加熱用の直流電源を示してい
る。そしてこの場合、基板４がサファイア板１に而で接
触するので、基板４は均一に加熱されることになる。7j', 4 shows a semiconductor substrate (
The figure shows a state in which a sample) 4 is being heated. is heated by. Note that 5 in the figure indicates a DC power source for heating the heater. In this case, since the substrate 4 comes into contact with the sapphire plate 1, the substrate 4 is heated uniformly.
かくして本実施例により１．ば、伝熱部４４４としてサ
ファイア板１が黙止によって破扛ｉすることを防止でき
、１０００〔℃〕以上もの高温で使用することが可能と
なった。さらに、ｐ、浄、な温度の列淵にも十勺削える
ことができだ。壕だ、通常のセラミ１．り机を使用り、
た」Ｊ♂１台に比［７てガスの放出が極めて少なく、１
０−９［Ｔｏｒｒ 〕以゛Ｆの超高真空中での使用も可
能とｋった。さらに、ツファイア板１が薄膜ヒー！ｆ′
２によシ均一に力Ｉす、）等されるため、ノ５（町４を
より均一性良く加熱するととが可能である。また、タン
グステンからなる殆′厄ヒータ２とサファイア板１との
反応もなく、５０回以上の４湖にも十分面１え得ること
が確ｍｌされた。Thus, according to this embodiment, 1. For example, it is possible to prevent the sapphire plate 1 from breaking due to silence as the heat transfer portion 444, and it has become possible to use it at a high temperature of 1000 [° C.] or higher. In addition, it is possible to reduce the depth of the p-pure temperature range. It's a trench, regular ceramic 1. using a desk,
Compared to a single J♂ unit [7
It is also possible to use it in an ultra-high vacuum of 0-9 Torr or more. Furthermore, the tsphire plate 1 is thin film heat! f′
2, it is possible to heat the town 4 more uniformly. Also, since the heat is applied evenly to the heater 2 made of tungsten and the sapphire plate 1. There was no reaction, and it was confirmed that it would be enough to win over 4 lakes over 50 times.
なお、本発明は上述・した実施例に駆足されるものでは
ない。ｆｌｌえげ、前記薄膜ヒータとしではタングステ
ンに限るものではなく、モリブデン、その信置空中で好
適に使用でき、高温でもサファイア板と反応しない部利
であオＬばよい。Note that the present invention is not limited to the embodiments described above. However, the thin film heater is not limited to tungsten, but may be made of molybdenum, which can be suitably used in the atmosphere and does not react with the sapphire plate even at high temperatures.
さらに、動用さヒータの形成は蒸着に限るものでｔＪ、
なく、スバ、り法やＣＶＤ法等を用いることもｎ、ｌ能
である。また、半導体基板の加熱に限らず、他の金Ｐり
、Ｐ！縁物の加〃（等に適用することも可能でｔＪる。Furthermore, the formation of the active heater is limited to vapor deposition; tJ,
Instead, it is also possible to use a chemical vapor deposition method, a CVD method, or the like. In addition to heating semiconductor substrates, it can also be used to heat other gold, P! It can also be applied to the addition of fringe items, etc.
その他、本発明の数計を逸脱しない範囲で、種々変形し
てシ工絢することができる。In addition, various modifications and improvements can be made without departing from the scope of the present invention.
第１図および第２図はそれぞれ本発明の４ｉｔ要を説明
す乙ためのもので第１図れザファイア単結晶の温バ（と
７気圧との圀、１係を示す傷性図、第２図はサファイア
片、結晶のｔ）「Ａ ＦＥ’Ｕ−勾配と割れＪ＋５生と
の関係をフ１：、す特性し１、第３し１及び氾４図はそ
ｉＩ−それ本発明の一５Ｉ′ＬＩＡ仰１を１゛１１明す
るためのもので第３１ｉｊ−１１，ｌ−軒略構ＪＪＬｉ
し１、第４〔１超、使用状態を示す図である。
１・・・、ＱＳ結晶ザファイア体（伝熱部利）、２・・
・薄膜ヒータ、３ａ 、、？ ｂ・・・％ｐ＜ｓ ４・
・・半導体基板（試第１）、５・・・電源。
出Ｋ）１人代別人 弁理士 鈴 江 武 彦第１ＷＡ
第３図
第４ａＩFigures 1 and 2 are for explaining the essential points of the present invention. is a sapphire piece, crystal t) ``A FE'U - The relationship between slope and crack J + 5 characteristics is 1, 3, 1 and 4 are ii - 5I of the present invention. This is to clarify the LIA 1.11.
1 and 4 [exceeding 1] are diagrams showing usage conditions. 1..., QS crystal zaphire body (heat transfer part), 2...
・Thin film heater, 3a,,? b...%p<s 4.
...Semiconductor substrate (first trial), 5...Power supply. Exit K) 1 person representative Patent attorney Suzue Takehiko 1st WA Figure 3 Figure 4aI
Claims (2)
て該ヒータからの熱を伝える平面状の伝熱部材とを具備
し、真空中で上記伝熱部材上に載置される試料を加熱す
る真空用試料加熱装置において、前記伝熱部材として単
結晶サファイア板を使用すると共に、前記ヒータとして
上記サファイア板の下面に被着形成した薄膜ヒータを用
いてなることを特徴とする真空内試料加熱装置。(1) A sample that is equipped with a heater that is electrically heated and a planar heat transfer member that is attached to the heater and transmits the heat from the heater, and that is placed on the heat transfer member in a vacuum. A vacuum sample heating device for heating a sample in a vacuum, characterized in that a single crystal sapphire plate is used as the heat transfer member, and a thin film heater formed on the lower surface of the sapphire plate is used as the heater. Sample heating device.
ブデンを前記サファイア基板の下面に蒸着、或いＦｉ、
ＣＶＤ法によシ堆積してなるものであることを特徴とす
る特許請求の範囲第１項記載の真空内試料加熱装置。(2) The thin film heater is formed by depositing Ta, ungsten or molybdenum on the lower surface of the sapphire substrate, or depositing Fi,
An in-vacuum sample heating device according to claim 1, characterized in that the in-vacuum sample heating device is formed by depositing by CVD method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14877382A JPS5939348A (en) | 1982-08-27 | 1982-08-27 | Apparatus for heating specimen in vacuum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14877382A JPS5939348A (en) | 1982-08-27 | 1982-08-27 | Apparatus for heating specimen in vacuum |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5939348A true JPS5939348A (en) | 1984-03-03 |
| JPS6159180B2 JPS6159180B2 (en) | 1986-12-15 |
Family
ID=15460334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14877382A Granted JPS5939348A (en) | 1982-08-27 | 1982-08-27 | Apparatus for heating specimen in vacuum |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5939348A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63200483A (en) * | 1987-01-23 | 1988-08-18 | ペース インコーポレーテッド | Heater and physically required value setting circuit |
| JPH01110245A (en) * | 1987-10-23 | 1989-04-26 | Iwatani Internatl Corp | Cryogenic temperature tester |
| CN104233215A (en) * | 2014-09-01 | 2014-12-24 | 蓝思科技股份有限公司 | Method for reinforcing heat transfer film and PVD film on sapphire lens |
-
1982
- 1982-08-27 JP JP14877382A patent/JPS5939348A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63200483A (en) * | 1987-01-23 | 1988-08-18 | ペース インコーポレーテッド | Heater and physically required value setting circuit |
| JPH01110245A (en) * | 1987-10-23 | 1989-04-26 | Iwatani Internatl Corp | Cryogenic temperature tester |
| JPH0515979B2 (en) * | 1987-10-23 | 1993-03-03 | Iwatani Sangyo Kk | |
| CN104233215A (en) * | 2014-09-01 | 2014-12-24 | 蓝思科技股份有限公司 | Method for reinforcing heat transfer film and PVD film on sapphire lens |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6159180B2 (en) | 1986-12-15 |
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